Abstract: Methods and devices for placing a semiconductor wafer or other substrate in contact with solder are described. A wave soldering apparatus includes a solder bath, a nozzle for producing a solder wave, and a jig for orienting a substrate in a substantially vertical orientation and placing the substrate in contact with a cascading solder wave. In another wave soldering apparatus, a jig orients a semiconductor wafer in a substantially horizontal orientation in contact with the solder wave. Another soldering apparatus includes a tank comprising molten solder and a fixture configured to orient one or more semiconductor wafers in a substantially vertical orientation. Methods of placing semiconductor wafers or other substrates in contact with solder using the devices of the present invention are also disclosed.

Abstract: Methods and devices for placing a semiconductor wafer or other substrate in contact with solder are described. A wave soldering apparatus includes a solder bath, a nozzle for producing a solder wave, and a jig for orienting a substrate in a substantially vertical orientation and placing the substrate in contact with a cascading solder wave. In another wave soldering apparatus, a jig orients a semiconductor wafer in a substantially horizontal orientation in contact with the solder wave. Another soldering apparatus includes a tank comprising molten solder and a fixture configured to orient one or more semiconductor wafers in a substantially vertical orientation. Methods of placing semiconductor wafers or other substrates in contact with solder using the devices of the present invention are also disclosed.

Abstract: A method for wave soldering comprises the steps of providing a circuit board having a plurality of electronic components thereon and providing a pallet comprising a frame, first and second parallel rails attached to the frame, and third and fourth rails for receiving the circuit board. The third and fourth rails are attached to the first and second rails and the third and fourth rails form an angle of between about 30.degree. and 60.degree. with the first and second rails. Next, a solder wave is provided which generally flows in a first direction. Finally, the pallet is moved in a second direction generally perpendicular with the first direction across the solder wave. The components are therefore positioned at an angle with respect to the solder wave and solder-related electrical defects are reduced.

Abstract: A pallet for holding a printed circuit board comprises first and second parallel rails and third and fourth parallel rails. The third and fourth rails each have first and second ends and form an angle of between about 30.degree. and 60.degree. with the first and second rails. The first and second ends of the third and fourth rails are connected to one of the first and second rails. The pallet further comprises an attachment for securing the printed circuit board to the third and fourth rails. The angled pallet has advantages over conventional pallets as shorts and shadowing are reduced.

Abstract: A stripe-shaped excitation region is provided in an active layer of a double heterojunction laser device, the excitation region and the other region of the active layer being endowed with an effective refractive index difference or optical absorption coefficient difference therebetween, and a carrier injection region is provided contiguously to the excitation region, whereby the laser device exhibits a low ohmic resistance, effects a stable lower-order transverse mode oscillation and suppresses relaxation oscillations. By preventing the stripe-shaped excitation region and the carrier injection region from being exposed to reflective surfaces, the aforecited beneficial results can be realized over a wide range of operating currents, and a laser device of extremely high power density emission is achieved due to the increase of the threshold of the catastrophic optical damage on mirrors.

Abstract: In an active layer restricted by a pair of heterojunctions in a semiconductor laser, a stripe region and a contiguous region are made to have a difference in kinds and/or concentrations of impurity to give the stripe region a higher dielectric constant, preferably by about 0.01-1%, than the contiguous region whereby transverse laser oscillation confined to the active layer by the heterojunctions is further confined to the stripe region in a width direction parallel to the heterojunctions. The dielectric constant profile established in the active layer stabilizes the transverse mode and eliminates nonlinearities in the laser output - exciting current curve as well as other undesirable performance characteristics that are exhibited in conventional stripe-geometry lasers. The difference in the impurity gives the stripe region a narrower band gap of from about 5 to about 100 meV than the contiguous region.

Abstract: A semiconductor laser device in which a part of the laser output is reflected from an external reflector and injected into the laser element with a delay that is less than the relaxation oscillation period of the laser pulse output.

Abstract: A semiconductor laser device is disclosed in which an external light beam having a wavelength approximately the same as at least one of the wavelengths of the resonance axial mode for the modulation semiconductor laser to oscillate is injected into the optical resonator of the modulation semiconductor laser.