Abstract: Embodiments provide improved memory bitcells, memory arrays, and memory architectures. In an embodiment, a memory array includes a plurality of memory cells to store data bits. Each of the plurality of memory cells includes a transistor having drain, source, and gate terminals, and a plurality of program nodes, each of the program nodes charged to a predetermined voltage and coupled to a respective one of a plurality of bit lines. For each memory cell in a subset of the plurality of memory cells, none of the plurality of program nodes is coupled to the drain terminal of the transistor to program the each memory cell in the subset of the plurality of memory cells to store at least one data bit, the at least one data bit is most occurred between the data bits.

Abstract: Embodiments provide improved memory bitcells, memory arrays, and memory architectures. In an embodiment, a memory array includes a plurality of memory cells to store data bits. Each of the plurality of memory cells includes a transistor having drain, source, and gate terminals, and a plurality of program nodes, each of the program nodes charged to a predetermined voltage and coupled to a respective one of a plurality of bit lines. For each memory cell in a subset of the plurality of memory cells, none of the plurality of program nodes is coupled to the drain terminal of the transistor to program the each memory cell in the subset of the plurality of memory cells to store at least one data bit, the at least one data bit is most occurred between the data bits.

Abstract: By adjusting a register's capturing clock edge timing so that the register captures data when the data returns to a correct state, the register may be protected against DSET upsets. If a data glitch occurs near the clock edge, the valid time at the register output is increased (CLK to Q). This valid time increase occurs when the presence of a DSET transient is detected near the clock edge.

Abstract: A system and method for providing error recovery to an asynchronous logic circuit is presented. The asynchronous logic circuit with error recovery may use temporal redundancy to compare the results of an asynchronous computation and initiate error recovery if necessary. Outputs of the asynchronous logic circuit are compared using a plurality of asynchronous register voters. If an asynchronous register voter detects an inconsistent result, the asynchronous register voter clears itself. A majority of common data outputs from the plurality of asynchronous register voters is provided as an output that is representative of the output of the asynchronous logic circuit.

Abstract: By adjusting a register's capturing clock edge timing so that the register captures data when the data returns to a correct state, the register may be protected against DSET upsets. If a data glitch occurs near the clock edge, the valid time at the register output is increased (CLK to Q). This valid time increase occurs when the presence of a DSET transient is detected near the clock edge.

Abstract: A radiation hardened latch and a method of operation. To mitigate SET effects, the latch includes an internally located pulse rejection inverter. The pulse rejection inverter receives an input logic signal, delays it, and compares the delay logic signal to the input logic signal. If the input logic signal and the delayed logic signal are equivalent, the delayed logic signal is allowed to propagate through the pulse rejection inverter. Because the pulse rejection inverter is internally located, SET events that occur upstream or internal to the latch or on clock signaling are mitigated.

Abstract: A system and method for hardening a Null Convention Logic (NCL) circuit against Single Event Upset (SEU) is presented. Placing a resistive element into a feedback loop of the NCL circuit may harden the NCL circuit. A bypass element may be placed in parallel with the resistive element to increase the latching speed of the hardened NCL circuit. Additionally, replacing transistors in an input driver, the feedback loop, and an inverter with transistor stacks, which may include two or more transistors connected in series, may harden the NCL circuit. Further, two NCL gates may be cross-coupled to harden the NCL circuit.

Abstract: A system and method for hardening a Null Convention Logic (NCL) circuit against Single Event Upset (SEU) is presented. Placing a resistive element into a feedback loop of the NCL circuit may harden the NCL circuit. A bypass element may be placed in parallel with the resistive element to increase the latching speed of the hardened NCL circuit. Additionally, replacing transistors in an input driver, the feedback loop, and an inverter with transistor stacks, which may include two or more transistors connected in series, may harden the NCL circuit. Further, two NCL gates may be cross-coupled to harden the NCL circuit.

Abstract: A system and method for hardening an asynchronous combinational logic circuit against Single Event Upset (SEU) is presented. The asynchronous combinational logic circuit is located between two asynchronous registers. A fault detector is used to detect a fault at an output of the asynchronous combinational logic circuit caused by SEU. If the fault detector detects a fault, a first asynchronous register is prevented from clearing stored data and a second asynchronous register is prevented from loading data from the asynchronous combinational logic circuit until the fault is cleared. Further, a timer circuit is used to ensure enough time elapses to allow the asynchronous combinational logic circuit to reevaluate itself. The asynchronous combinational logic circuit reevaluates itself by first propagating a NULL wave front to clear the fault and then propagating the data stored in the first asynchronous register to its outputs.

Abstract: A digital leakage compensation circuit for compensating for leakage in a dynamic circuit includes a dummy precharge circuit, a dummy input circuit, a dummy evaluation circuit, a dummy latching circuit, a sense circuit and a storage circuit. The dummy circuitry matches the size and layout of corresponding precharge, input, evaluation and latching circuitry in the dynamic circuit so that the leakage can be accurately modeled. The sense circuit senses the leakage and generates a signal, stored in the storage circuit, which causes an adjustable latching circuit to provide additional leakage compensation in the dynamic circuit. Alternatively, the dynamic circuit may include a driving circuit with an adjustable trip point. The sense circuit provides the signal to the driving circuit to adjust the trip point to compensate for the leakage.