Patents by Inventor Roy Maddox

Roy Maddox has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making semiconductor devices having two-layer gate structure
    Patent number: 5393683
    Abstract: The present invention includes a method of forming semiconductor oxide layers and, in particular, gate oxide layers, in MOS semiconductor devices formed on silicon substrates. The method includes the steps of forming a first silicon oxide sublayer on the silicon substrate in an atmosphere including primarily oxygen, and forming a second silicon oxide sublayer over the first sublayer in an atmosphere including primarily nitrous oxide (N.sub.2 O). Preferably, the first and second sublayers represent 80 percent and 20 percent, respectively, of the silicon oxide layer.
    Type: Grant
    Filed: May 26, 1992
    Date of Patent: February 28, 1995
    Assignee: Micron Technology, Inc.
    Inventors: Viju K. Mathews, Charles H. Dennison, Pierre Fazan, Roy Maddox, Akram Ditali