Abstract: Methods and systems are provided for automatically maintaining cleanliness of an vehicle. In one embodiment, a method includes: receiving, by a processor, at least one sensor signal from a sensor that monitors for particulates within an interior of a vehicle; determining, by the processor, a level of uncleanliness of the vehicle based on the sensor signal; and selectively generating, by the processor, at least one of a control signal to a cleaning element of the vehicle and a notification message based on the determining to achieve the level of cleanliness.

Abstract: Methods and systems are provided for automatically maintaining cleanliness of an vehicle. In one embodiment, a method includes: receiving, by a processor, at least one sensor signal from a sensor that monitors for particulates within an interior of a vehicle; determining, by the processor, a level of uncleanliness of the vehicle based on the sensor signal; and selectively generating, by the processor, at least one of a control signal to a cleaning element of the vehicle and a notification message based on the determining to achieve the level of cleanliness.

Abstract: A vertical voltage-controlled bidirectional monolithic switch formed between the upper and lower surfaces of a semiconductor substrate surrounded with a peripheral wall, including: a first multiple-cell vertical IGBT transistor extending between a cathode formed on the upper surface side and an anode formed on the lower surface side; and a second multiple-cell vertical IGBT transistor extending between a cathode formed on the lower surface side and an anode formed on the upper surface side, in which the cells of each transistor are arranged so that portions of the cells of a transistor are active upon operation of the other transistor.

Abstract: A vertical voltage-controlled bidirectional monolithic switch formed between the upper and lower surfaces of a semiconductor substrate surrounded with a peripheral wall, including: a first multiple-cell vertical IGBT transistor extending between a cathode formed on the upper surface side and an anode formed on the lower surface side; and a second multiple-cell vertical IGBT transistor extending between a cathode formed on the lower surface side and an anode formed on the upper surface side, in which the cells of each transistor are arranged so that portions of the cells of a transistor are active upon operation of the other transistor.

Abstract: A method for manufacturing a vertical power component on a substrate formed of a lightly-doped silicon wafer, including the steps of boring on the lower surface side of the substrate a succession of holes perpendicular to this surface; diffusing a dopant from the holes, of a second conductivity type opposite to that of the substrate; and boring similar holes on the upper surface side of the substrate to define an isolating wall and diffuse from these holes a dopant of the second conductivity type with a high doping level, the holes corresponding to the isolating wall being sufficiently close for the diffused areas to join laterally and vertically.