Patents by Inventor Roy Milton Carlson

Roy Milton Carlson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • One-time programmable memory cell
    Patent number: 9136217
    Abstract: A programmable memory cell including a thick oxide spacer transistor, a programmable thin oxide anti-fuse disposed adjacent to the thick oxide spacer transistor, and first and second thick oxide access transistors. The thick oxide spacer transistor and first and second thick oxide access transistors can include an oxide layer that is thicker than an oxide layer of the programmable thin oxide anti-fuse. The programmable thin oxide anti-fuse and the thick oxide spacer transistor can be natively doped. The first and second thick oxide access transistors can be doped so as to have standard threshold voltage characteristics.
    Type: Grant
    Filed: September 10, 2012
    Date of Patent: September 15, 2015
    Assignee: Broadcom Corporation
    Inventors: Jonathan Schmitt, Roy Milton Carlson, Yong Lu, Owen Hynes
  • Programmable diode array for high density OTP application
    Patent number: 9007805
    Abstract: A device for one-time-programmable (OTP) memory may include a capacitor formed by a conductive layer, an oxide layer, and a semiconductor well, and a diode that is formed after programing the device. The device may be programmable by applying a voltage between the conductive layer and the semiconductor well. The applied voltage may be capable of rupturing the oxide layer at one or more points. The conductive layer, the oxide layer, and the semiconductor well may be native CMOS process formations.
    Type: Grant
    Filed: September 30, 2013
    Date of Patent: April 14, 2015
    Assignee: Broadcom Corporation
    Inventors: Yong Lu, Roy Milton Carlson
  • PROGRAMMABLE DIODE ARRAY FOR HIGH DENSITY OTP APPLICATION
    Publication number: 20150078062
    Abstract: A device for one-time-programmable (OTP) memory may include a capacitor formed by a conductive layer, an oxide layer, and a semiconductor well, and a diode that is formed after programing the device. The device may be programmable by applying a voltage between the conductive layer and the semiconductor well. The applied voltage may be capable of rupturing the oxide layer at one or more points. The conductive layer, the oxide layer, and the semiconductor well may be native CMOS process formations.
    Type: Application
    Filed: September 30, 2013
    Publication date: March 19, 2015
    Applicant: BROADCOM CORPORATION
    Inventors: Yong LU, Roy Milton Carlson
  • One-Time Programmable Memory Cell
    Publication number: 20140071731
    Abstract: A programmable memory cell including a thick oxide spacer transistor, a programmable thin oxide anti-fuse disposed adjacent to the thick oxide spacer transistor, and first and second thick oxide access transistors. The thick oxide spacer transistor and first and second thick oxide access transistors can include an oxide layer that is thicker than an oxide layer of the programmable thin oxide anti-fuse. The programmable thin oxide anti-fuse and the thick oxide spacer transistor can be natively doped. The first and second thick oxide access transistors can be doped so as to have standard threshold voltage characteristics.
    Type: Application
    Filed: September 10, 2012
    Publication date: March 13, 2014
    Applicant: Broadcom Corporation
    Inventors: Jonathan Schmitt, Roy Milton Carlson, Yong Lu, Owen Hynes