Patents by Inventor Roy Moed

Roy Moed has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8216398
    Abstract: An efficient method to reduce product wastes due to inaccurate transformation temperatures for shape memory products and parts, which provides a useful method for optimizing shape memory alloys phase transformation temperatures and mechanical properties by using heat treatment procedures below 250 degrees C. for extended dwell times.
    Type: Grant
    Filed: May 17, 2010
    Date of Patent: July 10, 2012
    Assignee: Saint Louis University
    Inventors: John Gary Bledsoe, Berton Roy Moed, Dongfa Li
  • Publication number: 20110277890
    Abstract: An efficient method to reduce product wastes due to inaccurate transformation temperatures for shape memory products and parts, which provides a useful method for optimizing shape memory alloys phase transformation temperatures and mechanical properties by using heat treatment procedures below 250 degrees C. for extended dwell times.
    Type: Application
    Filed: May 17, 2010
    Publication date: November 17, 2011
    Applicant: Saint Louis University
    Inventors: John Gary Bledsoe, Berton Roy Moed, Dongfa Li
  • Publication number: 20100241120
    Abstract: The present invention describes a intramedullary nail that is useful in the repair of long bone fractures, wherein the nail has a flexible state, which allows for the insertion of the nail through any number of incisions that may be off center of the intramedullary canal, and a rigid state, which allows the nail to provide adequate support to mend the long bone. Several embodiments of an intramedullary nail are described, including a nail comprising a shape memory nickel-titanium alloy, which has an austenite start temperature of about 15° C. and an austenite finish temperature of about 35° C., and a nail comprising loosely fitting multiple links that can be tightened to provide rigidity when properly set in the intramedullary canal.
    Type: Application
    Filed: October 4, 2004
    Publication date: September 23, 2010
    Applicant: SAINT LOUIS UNIVERSITY
    Inventors: John Gary Bledsoe, Berton Roy Moed, Sridhar Condoor, Kevin Anthony Shields, Timothy Patrick Alford, Robert J. Miller, IV
  • Publication number: 20060079245
    Abstract: A position coordination system for coordinating a position of a number of users includes at least one user terminal, at least one mobile communications device, and a network connecting the at least one user terminal and the at least one mobile communications device. The at least one user terminal is configured upon receiving identification information from a first user to determine a second user who is registered with the system to meet the first user and to notify a mobile communications device associated with the second user via the network thereby notifying the second user of the first user's position and facilitating meeting of the two users.
    Type: Application
    Filed: September 22, 2005
    Publication date: April 13, 2006
    Applicant: MEETME LTD.
    Inventor: Roy Moed
  • Patent number: 4948755
    Abstract: A method is disclosed for fabricating a semiconductor integrated circuit which includes the selective deposition of a metal, such as tungsten, into a contact opening formed in a dielectric layer, followed by the deposition of a thin silicon layer over the dielectric and metal-filled opening and the deposition of a second dielectric layer over the thin silicon layer. An opening or trench is formed in the upper second dielectric layer using the silicon as an etch stop, and a metal such as tungsten is selectively deposited to fill the trench wherever the exposed silicon is present. In one embodiment of the invention, prior to the filling of the trench, the exposed silicon is reacted with a blanket layer of a metal to form a metal silicide layer at the lower surface of the trench.
    Type: Grant
    Filed: July 11, 1989
    Date of Patent: August 14, 1990
    Assignee: Standard Microsystems Corporation
    Inventor: Roy Mo
  • Patent number: 4933303
    Abstract: A process is disclosed for making a self-aligned metal (preferably tungsten) connection in an integrated circuit. A contact hole formed in a first dielectric layer on a substrate is filled with metal, after which the first dielectric layer and the metal-filled contact hole are covered with a second dielectric layer. A photoresist layer is formed over the second dielectric layer and is patterned. A trench is formed in the exposed second dielectric layer and a thin layer of silicon or a metal such as tungsten is then sputtered or evaporated to form a layer of the silicon or metal on the upper surface of the patterned photoresist and the bottom and side walls of the trench. The patterned photoresist is removed and the trench is filled with metal.
    Type: Grant
    Filed: July 25, 1989
    Date of Patent: June 12, 1990
    Assignee: Standard Microsystems Corporation
    Inventor: Roy Mo
  • Patent number: 4764484
    Abstract: A method is disclosed for fabricating a VLSI multilevel metallization integrated circuit in which a first dielectric layer (10), a thin silicon layer (16), and then a second dielectric layer (18) are deposited on the upper surface of a substrate. A trench (20) is formed in the upper, second dielectric layer leaving a thin layer of the second dielectric layer overlying the thin silicon layer. A contact hole (26) is then etched through the central part of the thin layer of the second dielectric layer, the thin silicon layer and the first dielectric layer to the surface of the substrate. Using the remaining outer portion (24a) of the thin layer of the dielectric layer as a mask over the underlying portion of the thin silicon layer, metal (28) such as tungsten is selectively deposited into the contact hole. The remaining portion of the thin layer of the second dielectric layer is then removed and the trench is selectively filled with a metal that is in electrical contact with the metal filling the contact hole.
    Type: Grant
    Filed: October 8, 1987
    Date of Patent: August 16, 1988
    Assignee: Standard Microsystems Corporation
    Inventor: Roy Mo