Abstract: An electrostatic chuck assembly including a dielectric layer with a top surface to support a workpiece. A cooling channel base disposed below the dielectric layer includes a plurality of fluid conduits disposed beneath the top surface. A chuck assembly further includes a plurality of resistive heater rods spatially distribute across the chuck assembly. In embodiments, 169 heater rods and three heat transfer fluid flow controls are independently controlled during execution of a plasma etch process.

Abstract: An electrostatic chuck assembly including a dielectric layer with a top surface to support a workpiece. A cooling channel base disposed below the dielectric layer includes a plurality of fluid conduits disposed beneath the top surface. A chuck assembly further includes a plurality of resistive heater rods spatially distribute across the chuck assembly. In embodiments, 169 heater rods and three heat transfer fluid flow controls are independently controlled during execution of a plasma etch process.

Abstract: A method for polishing a substrate on a pad large enough to accommodate polishing at least two substrates simultaneously The method includes simultaneously pressing a first substrate and a second substrate against a single polishing surface of a polishing module, providing polishing fluid from a first fluid delivery arm in front of the first substrate while the first substrate is pressed against the polishing surface, providing polishing fluid from a second fluid delivery arm at a location in front of the second substrate while the second substrate is pressed against the polishing surface, conditioning the polishing surface with a first conditioner at a location behind the first substrate while the first substrate is pressed against the polishing surface, and conditioning the polishing surface with a second conditioner at a location behind the second substrate while the second substrate is pressed against the polishing surface.

Abstract: In one or more aspects, an apparatus for cleaning a substrate includes (1) a plurality of rollers adapted to contact and support the substrate in a horizontal orientation, and (2) at least one brush adapted to contact a major surface of the substrate while the substrate is supported by the plurality of rollers to clean the major surface of the substrate. At least one of the plurality of rollers is adapted to move between an opened position allowing the substrate to be loaded onto or unloaded from the plurality of rollers and a closed position in which the substrate is supported by the plurality of rollers. Numerous other aspects are provided.

Abstract: A method for controlling liquid delivery in a processing chamber. The method includes generating an analog input (AI) signal proportional to a process variable and calculating an analog output (AO) signal based on a setpoint and a deadband. The setpoint is a target value of the process variable and the deadband is an allowable tolerance around the setpoint that determines when the control logic is activated to control the process variable. The method further includes transmitting the AO signal to a control device and adjusting the process variable proportional to the value of the AO signal.

Abstract: A method for calibrating a controller of a robotic arm in a microelectronics manufacturing apparatus that includes storing a default position for an edge detector, moving a blade on the robotic arm based on the default position of the edge detector such that at least three edge points on the blade pass through and are detected by the edge detector, generating a plurality of arm position measurements from an arm position sensor by measuring a position with the arm position sensor of the robotic arm at each position of the robotic arm at which an edge point of the blade is detected by the edge detector, and determining at least one of an actual position of the edge detector and an offset for measurements of the arm position sensor based on the plurality of arm position measurements.