Abstract: A microelectronic structure, and in particular a semiconductor structure, includes a substrate that includes an alignment mark comprising a substantially present element that has an atomic number at least 5 greater than a highest atomic number substantially present element within the substrate. Alignment to the alignment mark may be effected using an electron beam as an alignment beam with respect to both a direct write exposure and a reticle filtered optical exposure of a mask layer (i.e., photoresist mask layer) located over the alignment mark and the substrate. The electron beam alignment beam may effectively penetrate through other layers, including conductor layers comprising elements having appropriately low atomic number, located interposed between the alignment mark and the mask layer.

Abstract: A microelectronic structure, and in particular a semiconductor structure, includes a substrate that includes an alignment mark comprising a substantially present element that has an atomic number at least 5 greater than a highest atomic number substantially present element within the substrate. Alignment to the alignment mark may be effected using an electron beam as an alignment beam with respect to both a direct write exposure and a reticle filtered optical exposure of a mask layer (i.e., photoresist mask layer) located over the alignment mark and the substrate. The electron beam alignment beam may effectively penetrate through other layers, including conductor layers comprising elements having appropriately low atomic number, located interposed between the alignment mark and the mask layer.