Abstract: Systems, apparatuses, and methods related to using memory device sensors are described. Some memory system or device types include sensors embedded in their circuitry. For instance, a device can be coupled to a memory device with an embedded sensor. The memory device can transmit the data generated by the embedded sensor using a sensor output coupled to the device. The memory device may generate, based at least in part on a characteristic of a memory device, a signal from a sensor embedded in the memory device and transmit the signal generated by the sensor from the memory device to another device coupled to the memory device.

Abstract: Systems, apparatuses, and methods related to using memory device sensors are described. Some memory system or device types include sensors embedded in their circuitry. For instance, a device can be coupled to a memory device with an embedded sensor. The memory device can transmit the data generated by the embedded sensor using a sensor output coupled to the device. The memory device may generate, based at least in part on a characteristic of a memory device, a signal from a sensor embedded in the memory device and transmit the signal generated by the sensor from the memory device to another device coupled to the memory device.

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory devices are configured to monitor degradations in word line characteristics. The memory device may generate a reference signal in response to an access command directed to a memory array including a plurality of word lines, in some embodiments. The memory array may include a victim word line configured to accumulate adverse effects of executing multiple access commands at the word lines of the memory array. When the degradation in the word line characteristics causes reliability issues (e.g., corrupted data), the memory array is deemed unreliable, and may be blocked from memory operations. The memory device may compare the reference signal and a signal from the victim word line to determine whether preventive measures may be appropriate to avoid (or mitigate) such reliability issues.

Abstract: Systems, apparatuses, and methods related to using memory device sensors are described. Some memory system or device types include sensors embedded in their circuitry. For instance, another device can be coupled to a memory device with an embedded sensor. The memory device can transmit a signal representing sensor data generated by the embedded sensor using a sensor output coupled to the other device. A controller coupled to a memory device may determine one or more threshold values of a sensor or sensors embedded in a memory device. The memory device may transmit an indication responsive to one or more sensors detecting a value greater or less than a threshold and may transmit the indication to another device.

Abstract: Systems, apparatuses, and methods related to using memory device sensors are described. Some memory system or device types include sensors embedded in their circuitry. For instance, another device can be coupled to a memory device with an embedded sensor. The memory device can transmit a signal representing sensor data generated by the embedded sensor using a sensor output coupled to the other device. A controller coupled to a memory device may determine one or more threshold values of a sensor or sensors embedded in a memory device. The memory device may transmit an indication responsive to one or more sensors detecting a value greater or less than a threshold and may transmit the indication to another device.

Abstract: Systems, apparatuses, and methods related to using memory device sensors are described. Some memory system or device types include sensors embedded in their circuitry. For instance, a device can be coupled to a memory device with an embedded sensor. The memory device can transmit the data generated by the embedded sensor using a sensor output coupled to the device. The memory device may generate, based at least in part on a characteristic of a memory device, a signal from a sensor embedded in the memory device and transmit the signal generated by the sensor from the memory device to another device coupled to the memory device.

Abstract: Systems, apparatuses, and methods related to using memory device sensors are described. Some memory system or device types include sensors embedded in their circuitry. For instance, a device can be coupled to a memory device with an embedded sensor. The memory device can transmit the data generated by the embedded sensor using a sensor output coupled to the device. The memory device may generate, based at least in part on a characteristic of a memory device, a signal from a sensor embedded in the memory device and transmit the signal generated by the sensor from the memory device to another device coupled to the memory device.

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory devices are configured to monitor degradations in word line characteristics. The memory device may generate a reference signal in response to an access command directed to a memory array including a plurality of word lines, in some embodiments. The memory array may include a victim word line configured to accumulate adverse effects of executing multiple access commands at the word lines of the memory array. When the degradation in the word line characteristics causes reliability issues (e.g., corrupted data), the memory array is deemed unreliable, and may be blocked from memory operations. The memory device may compare the reference signal and a signal from the victim word line to determine whether preventive measures may be appropriate to avoid (or mitigate) such reliability issues.

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory devices are configured to monitor degradations in word line characteristics. The memory device may generate a reference signal in response to an access command directed to a memory array including a plurality of word lines, in some embodiments. The memory array may include a victim word line configured to accumulate adverse effects of executing multiple access commands at the word lines of the memory array. When the degradation in the word line characteristics causes reliability issues (e.g., corrupted data), the memory array is deemed unreliable, and may be blocked from memory operations. The memory device may compare the reference signal and a signal from the victim word line to determine whether preventive measures may be appropriate to avoid (or mitigate) such reliability issues.

Abstract: Systems, apparatuses, and methods related to memory device sensors are described. Memory systems can include multiple types of memory devices including memory media and can write data to the memory media. Some types of memory devices include sensors embedded in the circuitry of the memory device that can generate data. The memory device can transmit the data generated by the embedded sensor using a sensor output coupled to another device. In an example, a method can include generating orientation data, including coordinates, of a memory device by measuring linear acceleration or rotational motion using a motion sensor embedded in circuitry of the memory device, receiving a signal that represents image data from an image sensor, and pairing the orientation data of the memory device with the image data.

Abstract: Memory devices, systems including memory devices, and methods of operating memory devices are described, in which memory devices are configured to monitor degradations in word line characteristics. The memory device may generate a reference signal in response to an access command directed to a memory array including a plurality of word lines, in some embodiments. The memory array may include a victim word line configured to accumulate adverse effects of executing multiple access commands at the word lines of the memory array. When the degradation in the word line characteristics causes reliability issues (e.g., corrupted data), the memory array is deemed unreliable, and may be blocked from memory operations. The memory device may compare the reference signal and a signal from the victim word line to determine whether preventive measures may be appropriate to avoid (or mitigate) such reliability issues.

Abstract: Systems, apparatuses, and methods related to using memory device sensors are described. Some memory system or device types include sensors embedded in their circuitry. For instance, a device can be coupled to a memory device with an embedded sensor. The memory device can transmit the data generated by the embedded sensor using a sensor output coupled to the device. The memory device may generate, based at least in part on a characteristic of a memory device, a signal from a sensor embedded in the memory device and transmit the signal generated by the sensor from the memory device to another device coupled to the memory device.

Abstract: Systems, apparatuses, and methods related to using memory device sensors are described. Some memory system or device types include sensors embedded in their circuitry. For instance, another device can be coupled to a memory device with an embedded sensor. The memory device can transmit a signal representing sensor data generated by the embedded sensor using a sensor output coupled to the other device. A controller coupled to a memory device may determine one or more threshold values of a sensor or sensors embedded in a memory device. The memory device may transmit an indication responsive to one or more sensors detecting a value greater or less than a threshold and may transmit the indication to another device.