Patents by Inventor Royce Lowis
Royce Lowis has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7829420Abstract: A semiconductor device has a channel termination region for using a trench 30 filled with field oxide 32 and a channel stopper ring 18 which extends from the first major surface 8 through p-well 6 along the outer edge 36 of the trench 30, under the trench and extends passed the inner edge 34 of the trench. This asymmetric channel stopper ring provides an effective termination to the channel 10 which can extend as far as the trench 30.Type: GrantFiled: August 12, 2008Date of Patent: November 9, 2010Assignee: NXP B.V.Inventor: Royce Lowis
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Publication number: 20090209077Abstract: A semiconductor device has a channel termination region for using a trench 30 filled with field oxide 32 and a channel stopper ring 18 which extends from the first major surface 8 through p-well 6 along the outer edge 36 of the trench 30, under the trench and extends passed the inner edge 34 of the trench. This asymmetric channel stopper ring provides an effective termination to the channel 10 which can extend as far as the trench 30.Type: ApplicationFiled: August 12, 2008Publication date: August 20, 2009Applicant: NXP B.V.Inventor: Royce LOWIS
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Patent number: 7439582Abstract: A power semiconductor device is described with a plurality of cells divided into power cells (14) and sense cells (16). A plurality of groups (30, 32) of sense cells (16) are provided. The device allows for compensation of effects caused at the edges of the groups of sense cells (16).Type: GrantFiled: September 12, 2003Date of Patent: October 21, 2008Assignee: NXP B.V.Inventor: Royce Lowis
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Patent number: 7425752Abstract: A semiconductor device has a channel termination region for using a trench (30) filled with field oxide (32) and a channel stopper ring (18) which extends from the first major surface (8) through p-well (6) along the outer edge (36) of the trench (30), under the trench and extends passed the inner edge (34) of the trench. This asymmetric channel stopper ring provides an effective termination to the channel (10) which can extend as far as the trench (30).Type: GrantFiled: October 30, 2003Date of Patent: September 16, 2008Inventor: Royce Lowis
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Publication number: 20060163652Abstract: A power semiconductor device is described with a plurality of cells divided into power cells (14) and sense cells (16). A plurality of groups (30, 32) of sense cells (16) are provided. The device allows for compensation of effects caused at the edges of the groups of sense cells (16).Type: ApplicationFiled: September 12, 2003Publication date: July 27, 2006Inventor: Royce Lowis
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Publication number: 20060071294Abstract: A semiconductor device has a channel termination region for using a trench (30) filled with field oxide (32) and a channel stopper ring (18) which extends from the first major surface (8) through p-well (6) along the outer edge (36) of the trench (30), under the trench and extends passed the inner edge (34) of the trench. This asymmetric channel stopper ring provides an effective termination to the channel (10) which can extend as far as the trench (30).Type: ApplicationFiled: October 30, 2003Publication date: April 6, 2006Applicant: Koninklijke Philips Electronics N.V.Inventor: Royce Lowis
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Patent number: 5801573Abstract: A protected switch has a power semiconductor device (P) having first and second main electrodes (D and S) for coupling a load (L) between first (2) and second (3) voltage supply lines, a control electrode (G) coupled to a control voltage supply line (4) and a sense electrode (S1) for providing in operation of the power semiconductor device a sense current that flows between the first (d) and sense electrodes (S1) and is indicative of the current that flows between the first (D) and second (S) main electrodes. A control arrangement (S) has a sense resistance (R4) coupled to the sense electrode (S1) and across which a sense voltage is developed by the sense current (I.sub.3). A control semiconductor device (M3) has its main electrodes coupled between the control electrode (G) and the second (S) main electrode of the power semiconductor device (P).Type: GrantFiled: June 27, 1997Date of Patent: September 1, 1998Assignee: U.S. Philips CorporationInventors: Brendan P. Kelly, Royce Lowis
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Patent number: 5563760Abstract: A temperature sensing circuit (100) for sensing the temperature of an active semiconductor device, for example, a power MOSFET (11) of a semiconductor body (10). The circuit has a first temperature sensing device (R1R2) provided on the semiconductor body at a first position (P.sub.1) adjacent a periphery (12) of the active semiconductor device (11), a second temperature sensing device (R3,R4) provided on the semiconductor body at a second position (P.sub.2) further from the periphery of the active semiconductor device than the first position. An arrangement, for example, a comparator responsive to the first and second temperature sensing devices provides a control signal to switch off the active semiconductor device (11) when the difference in the temperature sensed by the first and second sensing devices reaches a predetermined value.Type: GrantFiled: September 16, 1991Date of Patent: October 8, 1996Assignee: U.S. Philips CorporationInventors: Royce Lowis, Edward S. Eilley, Paul T. Moody, Aart G. Korteling, Brendan P. Kelley
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Patent number: 5434443Abstract: A semiconductor switch includes a power FET and a temperature sensor for providing a control signal to switch off the power FET when it reaches a predetermined thermal condition, such as a particular temperature. The power FET consists of a semiconductor body having a first region (13) of a first conductivity type adjacent one major surface (10a) thereof, and a plurality of cells (11). Each such cell has a second region (32) of the second (opposite) conductivity type provided within the first region (13), a third region (33) of the first conductivity type formed within the second region (32), and an insulated gate overlying a conduction channel in the second region (32) between the first and third regions (33 and 13). The temperature sensor (2) is formed within the semiconductor body (10) and consists of a number of further cells (11') of the same structure as the cells (11) of the power FET.Type: GrantFiled: May 10, 1994Date of Patent: July 18, 1995Assignee: U.S. Philips CorporationInventors: Brendon P. Kelly, Royce Lowis, Paul T. Moody
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Patent number: 5336943Abstract: A temperature sensing circuit has a first insulated gate field effect device which is operated deep into its subthreshold region where the voltage across the device varies with temperature and has a second insulated gate field effect device which is operated in an area of its square law region where the voltage across the second insulated gate field effect device is substantially independent of temperature. A comparator compares the voltages across the first and second field effect devices and provides a signal OT indicating the temperature sensed by the first insulated gate field effect device.Type: GrantFiled: July 1, 1992Date of Patent: August 9, 1994Assignee: U.S. Philips CorporationInventors: Brendan P. Kelly, Royce Lowis
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Patent number: 4521795Abstract: An insulated-gate field-effect transistor which may be of the D-MOS or V-MOS type includes a source region (1) which is surrounded by a second region (2) of opposite conductivity type, itself surrounded by a third region (3) associated with the transistor drain (4). An insulated gate (12) of the transistor is present on a channel area of the second region (2) between the source region (1) and a first part (31) of the third region (3). The third region (3) also has a surface-adjoining second part (32) which is remote from the first part (31) and preferably has a lower doping concentration than the second and source regions (2, 1).Type: GrantFiled: December 2, 1982Date of Patent: June 4, 1985Assignee: U.S. Philips CorporationInventors: David J. Coe, Royce Lowis
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Patent number: 4408384Abstract: An insulated-gate field-effect transistor is disclosed which is particularly suitable for forming high-frequency transistors for a common source circuit configuration.Type: GrantFiled: August 12, 1982Date of Patent: October 11, 1983Assignee: U.S. Philips CorporationInventors: Royce Lowis, Peter M. Tunbridge