Abstract: In a method, an aluminum body is chemically treated with at least one of an alkaline solution and an acid solution. Anode-oxidization is performed on the chemically treated aluminum body to form an aluminum oxide layer. The aluminum oxide layer is treated with hot water at a temperature more than 75° C. or steam. The aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm.

Abstract: In a method, an aluminum body is chemically treated with at least one of an alkaline solution and an acid solution. Anode-oxidization is performed on the chemically treated aluminum body to form an aluminum oxide layer. The aluminum oxide layer is treated with hot water at a temperature more than 75° C. or steam. The aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm.

Abstract: In a method, an aluminum body is chemically treated with at least one of an alkaline solution and an acid solution. Anode-oxidization is performed on the chemically treated aluminum body to form an aluminum oxide layer. The aluminum oxide layer is treated with hot water at a temperature more than 75 ° C. or steam. The aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm.

Abstract: In a method, an aluminum body is chemically treated with at least one of an alkaline solution and an acid solution. Anode-oxidization is performed on the chemically treated aluminum body to form an aluminum oxide layer. The aluminum oxide layer is treated with hot water at a temperature more than 75 ° C. or steam. The aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm.

Abstract: In a method, an aluminum body is chemically treated with at least one of an alkaline solution and an acid solution. Anode-oxidization is performed on the chemically treated aluminum body to form an aluminum oxide layer. The aluminum oxide layer is treated with hot water at a temperature more than 75° C. or steam. The aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm.

Abstract: In a method, an aluminum body is chemically treated with at least one of an alkaline solution and an acid solution. Anode-oxidization is performed on the chemically treated aluminum body to form an aluminum oxide layer. The aluminum oxide layer is treated with hot water at a temperature more than 75° C. or steam. The aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm.

Abstract: A method for manufacturing a silicon carbide thin film comprises steps of: (a) utilizing a mechanical pump to remove gases in a chamber such that the pressure in the chamber is reduced to a base pressure; (b) utilizing a microwave generator to generate microwaves at 1200 W to 1400 W so as to form microwave plasma inside the chamber; and (c) introducing into the chamber a silicon-based compound containing chlorine atoms that serve as a precursor, during the time that the temperature of a substrate disposed in the chamber is stable at 400° C. to 500° C., in which the temperature of the substrate is risen by the microwave plasma without heating the substrate additionally, so as to form a film of cubic silicon carbide on the substrate. In the present invention, the SiC thin film has good crystallinity and is manufactured by using MPECVD in a low temperature process.

Abstract: A method for manufacturing a silicon carbide thin film comprises steps of: (a) utilizing a mechanical pump to remove gases in a chamber such that the pressure in the chamber is reduced to a bass pressure; (b) utilizing a microwave generator to generate microwaves at 1200W to 1400W so as to form microwave plasma inside the chamber; and (c) introducing into the chamber a silicon-based compound containing chlorine atoms that serve as a precursor, during the time that the temperature of a substrate disposed in the chamber is stable at 400° C. to 500° C., in which the temperature of the substrate is risen by the microwave plasma without heating the substrate additionally, so as to form a film of cubic silicon carbide on the substrate. In the present invention, the SiC thin film has good crystallinity and is manufactured by using MPECVD in a low temperature process.