Patents by Inventor Ru-Gun Liu

Ru-Gun Liu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 12341103
    Abstract: An integrated circuit includes a first and second active region, a first conductive structure, an insulating region, a set of gates and a set of contacts. The first and second active region are in a substrate, extend in a first direction, are located on a first level, and being separated from one another in a second direction. The first conductive structure extends in the first direction, is located on the first level, and is between the first and second active region. The insulating region is located on at least the first level, and is between the first and second active region and the first conductive structure. The set of gates extend in the second direction, overlap the first conductive structure, and is located on a second level. The set of contacts extend in the second direction, overlap the first conductive structure, and is located on the second level.
    Type: Grant
    Filed: November 7, 2022
    Date of Patent: June 24, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Pochun Wang, Ting-Wei Chiang, Chih-Ming Lai, Hui-Zhong Zhuang, Jung-Chan Yang, Ru-Gun Liu, Ya-Chi Chou, Yi-Hsiung Lin, Yu-Xuan Huang, Yu-Jung Chang, Guo-Huei Wu, Shih-Ming Chang
  • Publication number: 20250199394
    Abstract: A method for mask data synthesis and mask making includes calibrating an optical proximity correction (OPC) model by adjusting a plurality of parameters including a first parameter and a second parameter, wherein the first parameter indicates a long-range effect caused by an electron-beam lithography tool for making a mask used to manufacture a structure, and the second parameter indicates a geometric feature of a structure or a manufacturing process to make the structure, generating a device layout, calculating a first grid pattern density map of the device layout, generating a long-range correction map, at least based on the calibrated OPC model and the first grid pattern density map of the device layout, and performing an OPC to generate a corrected mask layout, at least based on the generated long-range correction map and the calibrated OPC model.
    Type: Application
    Filed: March 6, 2025
    Publication date: June 19, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hsu-Ting HUANG, Shih-Hsiang LO, Ru-Gun LIU
  • Publication number: 20250201576
    Abstract: In a method of forming a groove pattern extending in a first axis in an underlying layer over a semiconductor substrate, a first opening is formed in the underlying layer, and the first opening is extended in the first axis by directional etching to form the groove pattern.
    Type: Application
    Filed: March 4, 2025
    Publication date: June 19, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ru-Gun LIU, Chih-Ming LAI, Wei-Liang LIN, Yung-Sung YEN, Ken-Hsien HSIEH, Chin-Hsiang LIN
  • Patent number: 12334342
    Abstract: The present disclosure provides a method for semiconductor manufacturing in accordance with some embodiments. The method includes forming a hard mask layer over a substrate, the substrate having one or more regions to receive a treatment process, forming a resist layer over the hard mask layer, patterning the resist layer to form a plurality of openings in the resist layer, each of the openings free of concave corners, performing an opening expanding process to enlarge at least one of the openings in the resist layer, transferring the openings in the resist layer to the hard mask layer, and performing the treatment process to the one or more regions in the substrate through the openings in the hard mask layer.
    Type: Grant
    Filed: July 30, 2023
    Date of Patent: June 17, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Yu-Tien Shen, Ya-Wen Yeh, Wei-Liang Lin, Ya Hui Chang, Yung-Sung Yen, Wei-Hao Wu, Li-Te Lin, Ru-Gun Liu, Kuei-Shun Chen
  • Publication number: 20250147431
    Abstract: A method of manufacturing a semiconductor device includes dividing a number of dies along an x axis in a die matrix in each exposure field in an exposure field matrix delineated on the semiconductor substrate, wherein the x axis is parallel to one edge of a smallest rectangle enclosing the exposure field matrix. A number of dies is divided along a y axis in the die matrix, wherein the y axis is perpendicular to the x axis. Sequences SNx0, SNx1, SNx, SNxr, SNy0, SNy1, SNy, and SNyr are formed. p*(Nbx+1)?2 stepping operations are performed in a third direction and first sequence exposure/stepping/exposure operations and second sequence exposure/stepping/exposure operations are performed alternately between any two adjacent stepping operations as well as before a first stepping operation and after a last stepping operation. A distance of each stepping operation in order follows the sequence SNx.
    Type: Application
    Filed: January 9, 2025
    Publication date: May 8, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Shinn-Sheng YU, Ru-Gun LIU, Hsu-Ting HUANG, Kenji YAMAZOE, Minfeng CHEN, Shuo-Yen CHOU, Chin-Hsiang LIN
  • Publication number: 20250149343
    Abstract: In a method of manufacturing a semiconductor device, an underlying structure is formed over a substrate. A film is formed over the underlying structure. Surface topography of the film is measured and the surface topography is stored as topography data. A local etching is performed by using directional etching and scanning the substrate so that an entire surface of the film is subjected to the directional etching. A plasma beam intensity of the directional etching is adjusted according to the topography data.
    Type: Application
    Filed: January 10, 2025
    Publication date: May 8, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ya-Wen YEH, Yu-Tien SHEN, Shih-Chun HUANG, Po-Chin CHANG, Wei-Liang LIN, Yung-Sung YEN, Wei-Hao WU, Li-Te LIN, Pinyen LIN, Ru-Gun LIU
  • Patent number: 12278230
    Abstract: A method (of manufacturing conductors for a semiconductor device) includes: forming active regions (ARs) in a first layer, the ARs extending in a first direction; forming a conductive layer over the first layer; forming first, second and third caps over the conductive layer, the caps extending in a second direction perpendicular to the first direction, and the caps having corresponding first, second and third sensitivities that are different from each other; removing portions of the conductive layer not under the first, second or third caps resulting in gate electrodes under the first caps and first and second drain/source (D/S) electrodes correspondingly under the second or third caps; and selectively removing portions of corresponding ones of the first D/S electrodes and the second D/S electrodes.
    Type: Grant
    Filed: June 26, 2023
    Date of Patent: April 15, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kam-Tou Sio, Chih-Liang Chen, Hui-Ting Yang, Shun Li Chen, Ko-Bin Kao, Chih-Ming Lai, Ru-Gun Liu, Charles Chew-Yuen Young
  • Patent number: 12271107
    Abstract: A method for mask data synthesis and mask making includes calibrating an optical proximity correction (OPC) model by adjusting a plurality of parameters including a first parameter and a second parameter, wherein the first parameter indicates a long-range effect caused by an electron-beam lithography tool for making a mask used to manufacture a structure, and the second parameter indicates a geometric feature of a structure or a manufacturing process to make the structure, generating a device layout, calculating a first grid pattern density map of the device layout, generating a long-range correction map, at least based on the calibrated OPC model and the first grid pattern density map of the device layout, and performing an OPC to generate a corrected mask layout, at least based on the generated long-range correction map and the calibrated OPC model.
    Type: Grant
    Filed: February 29, 2024
    Date of Patent: April 8, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hsu-Ting Huang, Shih-Hsiang Lo, Ru-Gun Liu
  • Patent number: 12266539
    Abstract: In a method of forming a groove pattern extending in a first axis in an underlying layer over a semiconductor substrate, a first opening is formed in the underlying layer, and the first opening is extended in the first axis by directional etching to form the groove pattern.
    Type: Grant
    Filed: July 24, 2023
    Date of Patent: April 1, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ru-Gun Liu, Chih-Ming Lai, Wei-Liang Lin, Yung-Sung Yen, Ken-Hsien Hsieh, Chin-Hsiang Lin
  • Patent number: 12265334
    Abstract: A method includes receiving a layout for fabricating a mask, determining a plurality of target contours corresponding to a plurality of sets of lithographic process conditions, determining a modification to the layout, simulating the modification to the layout under the plurality of sets of lithographic process conditions to produce a plurality of simulated contours, determining a cost of the modification to the layout based on comparisons between the plurality of simulated contours and corresponding ones in the plurality of target contours, and providing the modification to the layout for fabricating the mask based at least in part on the cost being within a predetermined threshold.
    Type: Grant
    Filed: July 30, 2023
    Date of Patent: April 1, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Dong-Yo Jheng, Ken-Hsien Hsieh, Shih-Ming Chang, Chih-Jie Lee, Shuo-Yen Chou, Ru-Gun Liu
  • Patent number: 12237214
    Abstract: A method includes depositing a second dielectric layer over a first dielectric layer, depositing a third dielectric layer over the second dielectric layer, patterning a plurality of first openings in the third dielectric layer, etching the second dielectric layer through the first openings to form second openings in the second dielectric layer, performing a plasma etching process directed at the second dielectric layer from a first direction, the plasma etching process extending the second openings in the first direction, and etching the first dielectric layer through the second openings to form third openings in the first dielectric layer.
    Type: Grant
    Filed: June 29, 2023
    Date of Patent: February 25, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yi-Nien Su, Shu-Huei Suen, Jyu-Horng Shieh, Ru-Gun Liu
  • Patent number: 12235589
    Abstract: A method of manufacturing a semiconductor device includes dividing a number of dies along an x axis in a die matrix in each exposure field in an exposure field matrix delineated on the semiconductor substrate, wherein the x axis is parallel to one edge of a smallest rectangle enclosing the exposure field matrix. A number of dies is divided along a y axis in the die matrix, wherein the y axis is perpendicular to the x axis. Sequences SNx0, SNx1, SNx, SNxr, SNy0, SNy1, SNy, and SNyr are formed. p*(Nbx+1)?2 stepping operations are performed in a third direction and first sequence exposure/stepping/exposure operations and second sequence exposure/stepping/exposure operations are performed alternately between any two adjacent stepping operations as well as before a first stepping operation and after a last stepping operation. A distance of each stepping operation in order follows the sequence SNx.
    Type: Grant
    Filed: June 7, 2023
    Date of Patent: February 25, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Shinn-Sheng Yu, Ru-Gun Liu, Hsu-Ting Huang, Kenji Yamazoe, Minfeng Chen, Shuo-Yen Chou, Chin-Hsiang Lin
  • Patent number: 12230507
    Abstract: In a method of manufacturing a semiconductor device, an underlying structure is formed over a substrate. A film is formed over the underlying structure. Surface topography of the film is measured and the surface topography is stored as topography data. A local etching is performed by using directional etching and scanning the substrate so that an entire surface of the film is subjected to the directional etching. A plasma beam intensity of the directional etching is adjusted according to the topography data.
    Type: Grant
    Filed: April 25, 2023
    Date of Patent: February 18, 2025
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ya-Wen Yeh, Yu-Tien Shen, Shih-Chun Huang, Po-Chin Chang, Wei-Liang Lin, Yung-Sung Yen, Wei-Hao Wu, Li-Te Lin, Pinyen Lin, Ru-Gun Liu
  • Publication number: 20250044708
    Abstract: In a method of forming a pattern, a photo resist layer is formed over an underlying layer, the photo resist layer is exposed to an actinic radiation carrying pattern information, the exposed photo resist layer is developed to form a developed resist pattern, a directional etching operation is applied to the developed resist pattern to form a trimmed resist pattern, and the underlying layer is patterned using the trimmed resist pattern as an etching mask.
    Type: Application
    Filed: October 18, 2024
    Publication date: February 6, 2025
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ru-Gun LIU, Huicheng CHANG, Chia-Cheng CHEN, Jyu-Horng SHIEH, Liang-Yin CHEN, Shu-Huei SUEN, Wei-Liang LIN, Ya Hui CHANG, Yi-Nien SU, Yung-Sung YEN, Chia-Fong CHANG, Ya-Wen YEH, Yu-Tien SHEN
  • Patent number: 12159092
    Abstract: Implementations of the present disclosure provide coloring methods that sort and pre-color nodes of G0-linked networks in a multiple-patterning technology (MPT)-compliant layout design by coordinate. In one embodiment, a method includes identifying target networks in a circuit layout, each target network having two or more linked nodes representing circuit patterns, and each target network being presented in an imaginary X-Y coordinate plane, assigning a first feature to a first node in each target network, the first node is determined using a coordinate-based method, and assigning the first feature and a second feature to remaining nodes in each target network in an alternating manner so that any two immediately adjacent linked nodes in each target network have different features.
    Type: Grant
    Filed: July 26, 2023
    Date of Patent: December 3, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chia-Ping Chiang, Ming-Hui Chih, Chih-Wei Hsu, Ping-Chieh Wu, Ya-Ting Chang, Tsung-Yu Wang, Wen-Li Cheng, Hui En Yin, Wen-Chun Huang, Ru-Gun Liu, Tsai-Sheng Gau
  • Patent number: 12153350
    Abstract: In a method of forming a pattern, a photo resist layer is formed over an underlying layer, the photo resist layer is exposed to an actinic radiation carrying pattern information, the exposed photo resist layer is developed to form a developed resist pattern, a directional etching operation is applied to the developed resist pattern to form a trimmed resist pattern, and the underlying layer is patterned using the trimmed resist pattern as an etching mask.
    Type: Grant
    Filed: July 19, 2023
    Date of Patent: November 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ru-Gun Liu, Huicheng Chang, Chia-Cheng Chen, Jyu-Horng Shieh, Liang-Yin Chen, Shu-Huei Suen, Wei-Liang Lin, Ya Hui Chang, Yi-Nien Su, Yung-Sung Yen, Chia-Fong Chang, Ya-Wen Yeh, Yu-Tien Shen
  • Publication number: 20240385545
    Abstract: A method of performing a lithography process includes providing a test pattern. The test pattern includes a first set of lines arranged at a first pitch, a second set of lines arranged at the first pitch, and further includes at least one reference line between the first set of lines and the second set of lines. The test pattern is exposed with a radiation source providing an asymmetric, monopole illumination profile to form a test pattern structure on a substrate. The test pattern structure is then measured and a measured distance correlated to an offset of a lithography parameter. A lithography process is adjusted based on the offset of the lithography parameter.
    Type: Application
    Filed: July 29, 2024
    Publication date: November 21, 2024
    Inventors: Chih-Jie Lee, Shih-Chun Huang, Shih-Ming Chang, Ken-Hsien Hsieh, Yun-Sung Yen, Ru-Gun Liu
  • Publication number: 20240387247
    Abstract: In accordance with an aspect of the present disclosure, in a pattern forming method for a semiconductor device, a first opening is formed in an underlying layer disposed over a substrate. The first opening is expanded in a first axis by directional etching to form a first groove in the underlying layer. A resist pattern is formed over the underlying layer. The resist pattern includes a second opening only partially overlapping the first groove. The underlying layer is patterned by using the resist pattern as an etching mask to form a second groove.
    Type: Application
    Filed: July 29, 2024
    Publication date: November 21, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ru-Gun LIU, Chin-Hsiang LIN, Chih-Ming LAI, Wei-Liang LIN, Yung-Sung YEN
  • Patent number: 12148653
    Abstract: In accordance with an aspect of the present disclosure, in a pattern forming method for a semiconductor device, a first opening is formed in an underlying layer disposed over a substrate. The first opening is expanded in a first axis by directional etching to form a first groove in the underlying layer. A resist pattern is formed over the underlying layer. The resist pattern includes a second opening only partially overlapping the first groove. The underlying layer is patterned by using the resist pattern as an etching mask to form a second groove.
    Type: Grant
    Filed: May 10, 2021
    Date of Patent: November 19, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ru-Gun Liu, Chin-Hsiang Lin, Chih-Ming Lai, Wei-Liang Lin, Yung-Sung Yen
  • Publication number: 20240379358
    Abstract: The present disclosure provides a method of patterning a target material layer over a semiconductor substrate. The method includes steps of forming a spacer feature over the target material layer using a first sub-layout and performing a photolithographic patterning process using a second sub-layout to form a first feature. A portion of the first feature extends over the spacer feature. The method further includes steps of removing the portion of the first feature extending over the spacer feature and removing the spacer feature. Other methods and associated patterned semiconductor wafers are also provided herein.
    Type: Application
    Filed: July 22, 2024
    Publication date: November 14, 2024
    Inventors: Tsong-Hua Ou, Ken-Hsien Hsieh, Shih-Ming Chang, Wen-Chun Huang, Chih-Ming Lai, Ru-Gun Liu, Tsai-Sheng Gau