Patents by Inventor RU-JUN SUN

RU-JUN SUN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Sputtering target, oxide semiconducting film, and method for making the same
    Patent number: 9840769
    Abstract: An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:1:(0.5 to 2). A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CeZnxO5+x, wherein x=0.5˜2.
    Type: Grant
    Filed: October 26, 2015
    Date of Patent: December 12, 2017
    Assignees: Tsinghua University, HON HAI PRECISION INDUSTRY CO., LTD.
    Inventors: Da-Ming Zhuang, Ming Zhao, Ming-Jie Cao, Li Guo, Liang-Qi Ouyang, Ru-Jun Sun
  • SPUTTERING TARGET, OXIDE SEMICONDUCTING FILM, AND METHOD FOR MAKING THE SAME
    Publication number: 20170037506
    Abstract: An oxide semiconductor film includes indium (In), cerium (Ce), zinc (Zn) and oxygen (O) elements, and a molar ratio of the In, Ce, and Zn as In:Ce:Zn is in a range of 2:1:(0.5 to 2). A method for making a oxide semiconductor film includes a step of forming an oxide film on a substrate by using a sputtering method and a sputtering target comprising In2CeZnxO5+x, wherein x=0.5˜2.
    Type: Application
    Filed: October 26, 2015
    Publication date: February 9, 2017
    Inventors: DA-MING ZHUANG, MING ZHAO, MING-JIE CAO, LI GUO, LIANG-QI OUYANG, RU-JUN SUN
  • TIN OXIDE SPUTTERING TARGET AND METHOD FOR MAKING THE SAME
    Publication number: 20160326634
    Abstract: A tin oxide sputtering target includes uniformly mixed elemental Sn and SnO2. An atomic ratio of Sn atoms and O atoms in the tin oxide sputtering target satisfies 1:2<Sn:O?2:1. A method for making a tin oxide sputtering target includes steps of: providing Sn powder and SnO2 powder; mixing the Sn powder and the SnO2 powder to form a mixture, an atomic ratio of Sn atoms and O atoms in the mixture satisfies 1:2<Sn:O?2:1; and press-molding and sintering the mixture to obtain a tin oxide sputtering target, the sintering is performed in an inert atmosphere.
    Type: Application
    Filed: September 1, 2015
    Publication date: November 10, 2016
    Inventors: DA-MING ZHUANG, MING ZHAO, LI GUO, MING-JIE CAO, XIAO-LONG LI, RU-JUN SUN