Abstract: The present disclosure provides a method for fabricating a phosphor. A first solution is formed by dissolving potassium hexafluorogermanate (K2GeF6) and either K2MnF6 or KMnO4 in a hydrofluoric acid solution. An anhydrous ethanol is added to the first solution to make a total concentration of fluoride ions of potassium hexafluorogermanate (K2GeF6), hydrofluoric acid, and either K2MnF6 or KMnO4 equal to or less than 48M to form a precipitate. Afterward, the precipitate is collected.

Abstract: A phosphor is provided, which has a composition of Sr1-xLiAl3N4:Ce3+x, wherein 0<x<0.1. Sr1-xLiAl3N4 is a host material, and Ce3+ is a luminescent center. The phosphor can be collocated with an excitation light source to be applied in an illumination device. On the other hand, the phosphor can be collocated with other phosphors of different colors to be applied in a white light illumination device.

Abstract: The present invention relates to a phosphor, a method for preparing the phosphor, an optoelectronic component, and a method for producing the optoelectronic component. The phosphor has the following general formula: La3(1?x)Ga1?yGe5(1?z)O16: 3xA3+, yCr3+, 5zB4+, where x, y, and z do not equal to 0 simultaneously; A represents at least one of Gd and Yb; B represents at least one of Sn, Nb, and Ta. For the phosphor, its emission spectrum is within a red visible light region and a near-infrared region when excited by blue visible light, purple visible light or ultraviolet light; and it has a wide reflection spectrum and a high radiant flux. Therefore, it can be used in optoelectronic components such as LEDs to meet requirements of current medical testing, food composition analysis, security cameras, iris/facial recognition, virtual reality, gaming notebook and light detection and ranging applications.

Abstract: A phosphor is provided, which has a composition of Sr1-xLiAl3N4:Ce3+x, wherein 0<x<0.1. Sr1-xLiAl3N4 is a host material, and Ce3+ is a luminescent center. The phosphor can be collocated with an excitation light source to be applied in an illumination device. On the other hand, the phosphor can be collocated with other phosphors of different colors to be applied in a white light illumination device.

Abstract: A method for manufacturing a nitride phosphor is provided. The method comprises providing a nitride phosphor formulation and subjecting the nitride phosphor formulation to a hot isostatic pressing step. The nitride phosphor formulation comprises a flux and a phosphor precursor, wherein the flux is a barium-containing nitride. The phosphor precursor comprises two or more metal nitrides, and wherein a plurality of metal elements are present in the nitride phosphor and the two or more metal nitrides contain the plurality of metal elements.

Abstract: An emission spectrum of a manganese-doped red fluoride phosphor includes a zero phonon line crest and a crest. The zero phonon line crest has a first peak emission wavelength and a first intensity (I1). The crest has a second peak emission wavelength and a maximum intensity (Imax) except for the zero phonon line crest. The second peak emission wavelength is greater than the first peak emission wavelength. A ratio (I1/Imax) of the first intensity (I1) to the maximum intensity (Imax) is ranged from about 0.2 to about 8 such that a luminous decay time of the manganese-doped red fluoride phosphor is less than 10 ms.

Abstract: The present invention provides a phosphor represented by the following formula: K2[Ge1-xF6]:Mnx4+, wherein 0<x<0.2. The phosphor has a hexagonal phase of a P63mc space group. The present invention also provides a method for fabricating the above phosphor. The present invention further provides a light-emitting device and a backlight module employing the same.

Abstract: A fluoride phosphor including a sheet-like crystal and a manufacturing method and an application therefore are disclosed. The fluoride phosphor has a chemical formula A2[MF6]:Mn4+, with Mn4+ as an activator. The A is Li, Na, K, Rb, Cs, NH4 or a combination thereof. The M is Ge, Si, Sn, Ti, Zr or a combination thereof. The sheet-like crystal has a thickness d. A crystal flat surface of the sheet-like crystal has a maximum length a. The maximum length a is defined as a distance between two end points on an edge of the crystal flat surface and farthest from each other. 8?a/d?35.

Abstract: The present invention provides a phosphor with a preferred orientation represented by the following formula: A2[MF6]:Mn4+, wherein A is selected from a group consisting of Li, Na, K, Rb, Cs, and NH4, M is selected from a group consisting of Ge, Si, Sn, Ti, and Zr. The preferred orientation is a (001)/(011) preferred orientation. The present invention also provides a method for fabricating the above phosphor. The present invention further provides a light-emitting element package structure employing the same.

Abstract: A fluoride phosphor including a sheet-like crystal and a manufacturing method and an application therefore are disclosed. The fluoride phosphor has a chemical formula A2[MF6]:Mn4+, with Mn4+ as an activator. The A is Li, Na, K, Rb, Cs, NH4 or a combination thereof. The M is Ge, Si, Sn, Ti, Zr or a combination thereof. The sheet-like crystal has a thickness d. A crystal flat surface of the sheet-like crystal has a maximum length a. The maximum length a is defined as a distance between two end points on an edge of the crystal flat surface and farthest from each other. 8?a/d?35.

Abstract: A phosphor, having a general formula of K2[Si1-xGex]yF6:Mn1-y4+. The phosphor is excited to emit a light having a first main emission peak with a first maximum emission intensity and a first dominant wavelength, wherein a relative emission intensity S of the light of the phosphor is constantly greater than 85% across an temperature of the phosphor between 300 K and 470 K during operation, wherein S=(IT/IRT)*100%, IRT and IT are the first maximum emission intensity when the temperature of the phosphor is at 300 K and T during operation respectively, and 300 K<T?470K.

Abstract: A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer emitting an UV light, formed between the first semiconductor layer and the second semiconductor layer; a first transparent conductive layer formed on the second semiconductor layer, the first transparent conductive layer including metal oxide; and a second transparent conductive layer formed on the first transparent conductive layer, the second transparent conductive layer including graphene, wherein the first transparent conductive layer is continuously formed over a top surface of the second semiconductor layer, the first transparent conductive layer comprises a thickness smaller than 10 nm.

Abstract: An overcoating inorganic quantum dot and a method for preparing the same are provided. The overcoating inorganic quantum dot includes at least one perovskite quantum dot with an oxide overcoat. The method includes forming the perovskite quantum dots, and overcoating an oxide overcoat on the perovskite quantum dots.

Abstract: The present invention provides a method for fabricating a fluoride phosphor. A first solution is formed by dissolving potassium fluoride (KF) and either K2MnF6 or KMnO4 in a hydrofluoric acid solution. A second solution is formed by mixing a surfactant and a silane. The first solution and the second solution are mixed to form a precipitate. The precipitate is collected after the first solution and the second solution are mixed. The present invention also provides a fluoride phosphor represented by the following formula: K2[SiF6]:Mn4+. The fluoride phosphor has a particle size in a range of about 1 ?m to about 10 ?m. The present invention further provides a light-emitting apparatus and backlight module employing the same.

Abstract: Provided is a metal oxonitridosilicate phosphor of a general formula M5?z?a?bAl3+xSi23?xN37?x?2aOx+2a:Euz,Mnb, wherein M is one or more alkaline earth metals; 0; 0; 0<z?; and 0<b?.

Abstract: The present invention provides a method for preparing an electrode material, comprising providing an acidic plating bath; adding titanium dioxide in the form of powder, metal salt, and reductant to said acidic plating bath to obtain a precursor; and heat treating said precursor to obtain an electrode material. When the electrode material obtained by said method is applied to batteries, the batteries have not only high capacity, but also long lifetime.

Abstract: The present disclosure provides a method for fabricating a phosphor. A first solution is formed by dissolving potassium hexafluorogermanate (K2GeF6) and either K2MnF6 or KMnO4 in a hydrofluoric acid solution. An anhydrous ethanol is added to the first solution to make a total concentration of fluoride ions of potassium hexafluorogermanate (K2GeF6), hydrofluoric acid, and either K2MnF6 or KMnO4 equal to or less than 48M to form a precipitate. Afterward, the precipitate is collected.

Abstract: A wavelength-converting material and an application thereof are provided. The wavelength-converting material includes an all-inorganic perovskite quantum dot having a chemical formula of CsPb(ClaBr1-a-bIb)3, wherein 0?a?1, 0?b?1.

Abstract: A quantum dot composite material and a manufacturing method and an application thereof are provided. The quantum dot composite material includes an all-inorganic perovskite quantum dot and a modification protection on a surface of the all-inorganic perovskite quantum dot. The all-inorganic perovskite quantum dot has a chemical formula of CsPb(ClaBr1-a-bIb)3, wherein 0?a?1, 0?b?1.

Abstract: The present invention provides a method for fabricating a fluoride phosphor. A first solution is formed by dissolving potassium fluoride (KF) and either K2MnF6 or KMnO4 in a hydrofluoric acid solution. A second solution is formed by mixing a surfactant and a silane. The first solution and the second solution are mixed to form a precipitate. The precipitate is collected after the first solution and the second solution are mixed. The present invention also provides a fluoride phosphor represented by the following formula: K2[SiF6]:Mn4+. The fluoride phosphor has a particle size in a range of about 1 ?m to about 10 ?m. The present invention further provides a light-emitting apparatus and backlight module employing the same.