Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a first semiconductor structure, a dielectric bonding structure, a second semiconductor structure, and a through via structure. The first semiconductor structure includes a first substrate and a first back-end-of-line (BEOL) structure over the first substrate. The dielectric bonding structure is over the first semiconductor structure. The second semiconductor structure is over the dielectric bonding structure. The second semiconductor structure includes a second BEOL structure over the dielectric bonding structure and a second substrate over the second BEOL structure. The through via structure penetrates the second semiconductor structure and the dielectric bonding structure to connect the first BEOL structure and the second BEOL structure. A method for forming a semiconductor package structure is also provided.

Abstract: An insulated metal substrate (IMS) and a method for manufacturing the same are disclosed. The IMS includes an electrically conductive line pattern layer, an encapsulation layer, a first adhesive layer, a second adhesive layer, and a heat sink element. The encapsulation layer fills a gap between a plurality of electrically conductive lines of the electrically conductive line pattern layer. An upper surface of the encapsulation layer is flush with an upper surface of the electrically conductive line pattern layer. The first and second adhesive layer are disposed between the electrically conductive line pattern layer and the heat sink element. A bonding strength between the first adhesive layer and the second adhesive layer is greater than 80 kg/cm2.

Abstract: A semiconductor package structure is provided. The semiconductor package structure includes a first redistribution structure, a SoC structure, a memory structure, a first electronic component, and a first encapsulation layer. The first redistribution structure has a first side and a second side opposite to the first side. The SoC structure is on the first side of the first redistribution structure. The memory structure is adjacent to the SoC structure and on the first side of the first redistribution structure. The first electronic component is on the second side of the first redistribution structure and electrically connected to at least one of the SoC structure or the memory structure. The first encapsulation layer encapsulates the first electronic component. The first electronic component includes a semiconductor capacitor structure or a voltage converter.

Abstract: An insulated metal substrate (IMS) and a method for manufacturing the same are disclosed. The IMS includes an electrically conductive line pattern layer, an encapsulation layer, a first adhesive layer, a second adhesive layer, and a heat sink element. The encapsulation layer fills a gap between a plurality of electrically conductive lines of the electrically conductive line pattern layer. An upper surface of the encapsulation layer is flush with an upper surface of the electrically conductive line pattern layer. The first and second adhesive layer are disposed between the electrically conductive line pattern layer and the heat sink element. A bonding strength between the first adhesive layer and the second adhesive layer is greater than 80 kg/cm2.

Abstract: An insulated metal substrate (IMS) and a method for manufacturing the same are disclosed. The IMS includes an electrically conductive line pattern layer, an encapsulation layer, a first adhesive layer, a second adhesive layer, and a heat sink element. The encapsulation layer fills a gap between a plurality of electrically conductive lines of the electrically conductive line pattern layer. An upper surface of the encapsulation layer is flush with an upper surface of the electrically conductive line pattern layer. The first and second adhesive layer are disposed between the electrically conductive line pattern layer and the heat sink element. A bonding strength between the first adhesive layer and the second adhesive layer is greater than 80 kg/cm2.

Abstract: An insulated metal substrate (IMS) and a method for manufacturing the same are disclosed. The IMS includes an electrically conductive line pattern layer, an encapsulation layer, a first adhesive layer, a second adhesive layer, and a heat sink element. The encapsulation layer fills a gap between a plurality of electrically conductive lines of the electrically conductive line pattern layer. An upper surface of the encapsulation layer is flush with an upper surface of the electrically conductive line pattern layer. The first and second adhesive layer are disposed between the electrically conductive line pattern layer and the heat sink element. A bonding strength between the first adhesive layer and the second adhesive layer is greater than 80 kg/cm2.