Patents by Inventor Ru YIN
Ru YIN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240086633Abstract: A method for generating and outputting a message is implemented using an electronic device the stores a computer program product and a text database. The text database includes a main message template, a template text that includes a placeholder, and a word group that includes a plurality of preset words for replacing the placeholder. The method includes: in response to receipt of a command for execution of the computer program product, displaying an editing interface including the main message template; in response to receipt of user operation of a selection of the main message template, displaying the template text; in response to receipt of user operation of a selection of one of the preset words via the user interface, generating an edited text by replacing the placeholder with the one of the preset words in the template text; and outputting the edited text as a message.Type: ApplicationFiled: April 25, 2023Publication date: March 14, 2024Inventors: Yi-Ru CHIU, Ting-Yi LI, Hong-Xun WANG, Jin-Lin CHEN, Chih-Hsuan YEH, Chia-Chi YIN, Wei-Ting LI, Po-Lun CHANG
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Publication number: 20220011960Abstract: Per channel thermal management techniques are described herein. In one example, a memory controller receives channel temperature information for one or more channels of one or more dies in the stack. The memory controller can then throttle commands at a channel-level based on the channel temperature information. In one example, row commands and column commands to a channel are throttled at independent rates based on the channel temperature information. In one example, a row command throttling rate or column command throttling rate is based on a ratio of alternating on-time to off time of throttling signals, or a window of time in which commands are enabled or disabled to a channel. In one example, the row and column command throttling signals can be staggered across channels or pseudo channels.Type: ApplicationFiled: September 25, 2021Publication date: January 13, 2022Inventors: Chang Kian TAN, Ru Yin NG, Saravanan SETHURAMAN, Kuljit S. BAINS
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Patent number: 10519203Abstract: A gene for biosynthesis of core structure of ophiobolin, the gene being the AuOS gene of Aspergillus sp. 094102, deposited with the accession number CCTCC No: M208153, the gene sequence thereof being shown as SEQ ID NO. 1. Also provided is a method of preparation of ophiobolin using the gene.Type: GrantFiled: September 22, 2017Date of Patent: December 31, 2019Assignee: WUHAN UNIVERSITYInventors: Kui Hong, Huiying Meng, Hangzhen Chai, Ru Yin, Zixin Deng
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Patent number: 10146249Abstract: A control system controls First-In First-Out (FIFO) settings of a receiving system. The control system includes a FIFO settings controller that receives a first signal indicative of a first frequency of data received by the receiving system. The FIFO settings controller receives a second signal indicative of a second frequency of a clock that reads the data received by the receiving system. The FIFO settings controller determines a difference (e.g., a parts-per-million (PPM) difference) between the first frequency and the second frequency. The FIFO settings controller sends a third signal indicative of instructions to adjust FIFO configuration settings based on the PPM difference.Type: GrantFiled: September 23, 2016Date of Patent: December 4, 2018Assignee: Altera CorporationInventors: Han Hua Leong, Ru Yin Ng, Geok Sun Chong, David W. Mendel
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Publication number: 20180088622Abstract: A control system controls First-In First-Out (FIFO) settings of a receiving system. The control system includes a FIFO settings controller that receives a first signal indicative of a first frequency of data received by the receiving system. The FIFO settings controller receives a second signal indicative of a second frequency of a clock that reads the data received by the receiving system. The FIFO settings controller determines a difference (e.g., a parts-per-million (PPM) difference) between the first frequency and the second frequency. The FIFO settings controller sends a third signal indicative of instructions to adjust FIFO configuration settings based on the PPM difference.Type: ApplicationFiled: September 23, 2016Publication date: March 29, 2018Inventors: Han Hua Leong, Ru Yin Ng, Geok Sun Chong, David W. Mendel
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Patent number: 9891653Abstract: An integrated circuit die includes interface and adapter circuits. The interface circuit exchanges data with an external device outside the integrated circuit die using a first clock signal. The interface circuit has a clock signal generation circuit to generate the first clock signal based on a second clock signal. The adapter circuit exchanges the data with the interface circuit. A frequency of the second clock signal is changed in response to an indication of a change in a data rate of the data. The adapter circuit causes the interface circuit to provide an adjustment to the first clock signal after the frequency of the second clock signal changes. The adapter circuit prevents the exchange of the data between the interface circuit and the external device until the adapter circuit receives an indication of completion of the adjustment to the first clock signal.Type: GrantFiled: June 15, 2015Date of Patent: February 13, 2018Assignee: Altera CorporationInventors: Ru Yin Ng, Gary Wallichs, Keith Duwel
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Publication number: 20180009855Abstract: A gene for biosynthesis of core structure of ophiobolin, the gene being the AuOS gene of Aspergillus sp. 094102, deposited with the accession number CCTCC No: M208153, the gene sequence thereof being shown as SEQ ID NO. 1. Also provided is a method of preparation of ophiobolin using the gene.Type: ApplicationFiled: September 22, 2017Publication date: January 11, 2018Inventors: Kui HONG, Huiying MENG, Hangzhen CHAI, Ru YIN, Zixin DENG
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Publication number: 20160363954Abstract: An integrated circuit die includes interface and adapter circuits. The interface circuit exchanges data with an external device outside the integrated circuit die using a first clock signal. The interface circuit has a clock signal generation circuit to generate the first clock signal based on a second clock signal. The adapter circuit exchanges the data with the interface circuit. A frequency of the second clock signal is changed in response to an indication of a change in a data rate of the data. The adapter circuit causes the interface circuit to provide an adjustment to the first clock signal after the frequency of the second clock signal changes. The adapter circuit prevents the exchange of the data between the interface circuit and the external device until the adapter circuit receives an indication of completion of the adjustment to the first clock signal.Type: ApplicationFiled: June 15, 2015Publication date: December 15, 2016Applicant: ALTERA CORPORATIONInventors: Ru Yin Ng, Gary Wallichs, Keith Duwel
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Publication number: 20160235669Abstract: The present invention provides a process for preparing a water dispersion containing a high concentration of nano/submicron, hydrophobic, functional compounds. The process is carried out by using a complex stabilizer having an HLB value of about 10 to about 17, comprising lecithin and at least one non-phospholipid selected from polysorbate, sucrose ester, and polyglycerol fatty acid ester; selecting a specific weight ratio of the hydrophobic functional compounds and the stabilizer; and using homogenization technique, media milling technique, and/or centrifugal technique. The water dispersion containing a high concentration of nano/submicron, hydrophobic, functional compound produced by the process of the invention has stable dispersibility and improved bioavailability, and can be applied to the fields of foods and pharmaceuticals.Type: ApplicationFiled: April 26, 2016Publication date: August 18, 2016Inventors: RU-YIN CHEN, CHUNG-JEN CHEN, YI-JIE TSAI, JIA-JIU WU, CHIH-PING HUANG, CHUNG-LIANG CHU
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Patent number: 8673654Abstract: An MRAM structure is disclosed in which the bottom electrode has an amorphous TaN capping layer to consistently provide smooth and dense growth for AFM, pinned, tunnel barrier, and free layers in an overlying MTJ. Unlike a conventional Ta capping layer, TaN is oxidation resistant and has high resistivity to avoid shunting of a sense current caused by redeposition of the capping layer on the sidewalls of the tunnel barrier layer. Alternatively, the ?-TaN layer is the seed layer in the MTJ. Furthermore, the seed layer may be a composite layer comprised of a NiCr, NiFe, or NiFeCr layer on the ?-TaN layer. An ?-TaN capping layer or seed layer can also be used in a TMR read head. An MTJ formed on an ?-TaN capping layer has a high MR ratio, high Vb, and a RA similar to results obtained from MTJs based on an optimized Ta capping layer.Type: GrantFiled: October 23, 2009Date of Patent: March 18, 2014Assignee: Headway Technologies, Inc.Inventors: Liubo Hong, Cheng Horng, Mao-Min Chen, Ru-Yin Tong
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Publication number: 20120244134Abstract: The present invention provides a process for preparing an aqueous dispersion containing a high concentration of nano/submicron, hydrophobic, functional compounds. The process is carried out by using a complex stabilizer having an HLB value of about 10 to about 17, comprising lecithin and at least one non-phospholipid selected from polysorbate, sucrose ester, and polyglycerol fatty acid ester; selecting a specific weight ratio of the hydrophobic functional compounds and the stabilizer; and using homogenization technique, media milling technique, and/or centrifugal technique. The aqueous dispersion containing a high concentration of nano/submicron, hydrophobic, functional compound produced by the process of the invention has stable dispersibility and improved bioavailability, and can be applied to the fields of foods and pharmaceuticals.Type: ApplicationFiled: July 19, 2011Publication date: September 27, 2012Inventors: Ru-Yin CHEN, Chung-Jen CHEN, Yi-Jie TSAI, Jia-Jiu WU, Chih-Ping HUANG, Chung-Liang CHU
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Patent number: 7999360Abstract: An MRAM structure is disclosed in which the bottom electrode has an amorphous TaN capping layer to consistently provide smooth and dense growth for AFM, pinned, tunnel barrier, and free layers in an overlying MTJ. Unlike a conventional Ta capping layer, TaN is oxidation resistant and has high resistivity to avoid shunting of a sense current caused by redeposition of the capping layer on the sidewalls of the tunnel barrier layer. Alternatively, the ?-TaN layer is the seed layer in the MTJ. Furthermore, the seed layer may be a composite layer of NiCr, NiFe, or NiFeCr layer on the oc-TaN layer. An ?-TaN capping layer or seed layer can also be used in a TMR read head. An MTJ formed on an ?-TaN capping layer has a high MR ratio, high Vb, and a RA similar to results obtained from MTJs based on an optimized Ta capping layer.Type: GrantFiled: October 23, 2009Date of Patent: August 16, 2011Assignees: Headway Technologies, Inc., MagIC Technologies, Inc.Inventors: Liubo Hong, Cheng Horng, Mao-Min Chen, Ru-Yin Tong
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Publication number: 20100047929Abstract: An MRAM structure is disclosed in which the bottom electrode has an amorphous TaN capping layer to consistently provide smooth and dense growth for AFM, pinned, tunnel barrier, and free layers in an overlying MTJ. Unlike a conventional Ta capping layer, TaN is oxidation resistant and has high resistivity to avoid shunting of a sense current caused by redeposition of the capping layer on the sidewalls of the tunnel barrier layer. Alternatively, the ?-TaN layer is the seed layer in the MTJ. Furthermore, the seed layer may be a composite layer comprised of a NiCr, NiFe, or NiFeCr layer on the ?-TaN layer. An ?-TaN capping layer or seed layer can also be used in a TMR read head. An MTJ formed on an ?-TaN capping layer has a high MR ratio, high Vb, and a RA similar to results obtained from MTJs based on an optimized Ta capping layer.Type: ApplicationFiled: October 23, 2009Publication date: February 25, 2010Inventors: Liubo Hong, Cheng Horng, Mao-Min Chen, Ru-Yin Tong
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Publication number: 20100044680Abstract: An MRAM structure is disclosed in which the bottom electrode has an amorphous TaN capping layer to consistently provide smooth and dense growth for AFM, pinned, tunnel barrier, and free layers in an overlying MTJ. Unlike a conventional Ta capping layer, TaN is oxidation resistant and has high resistivity to avoid shunting of a sense current caused by redeposition of the capping layer on the sidewalls of the tunnel barrier layer. Alternatively, the ?-TaN layer is the seed layer in the MTJ. Furthermore, the seed layer may be a composite layer comprised of a NiCr, NiFe, or NiFeCr layer on the ?-TaN layer. An ?-TaN capping layer or seed layer can also be used in a TMR read head. An MTJ formed on an ?-TaN capping layer has a high MR ratio, high Vb, and a RA similar to results obtained from MTJs based on an optimized Ta capping layer.Type: ApplicationFiled: October 23, 2009Publication date: February 25, 2010Inventors: LIUBO HONG, Cheng Horng, Mao-Min Chen, Ru-Yin Tong
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Patent number: 7611912Abstract: An MRAM structure is disclosed in which the bottom electrode has an amorphous TaN capping layer to consistently provide smooth and dense growth for AFM, pinned, tunnel barrier, and free layers in an overlying MTJ. Unlike a conventional Ta capping layer, TaN is oxidation resistant and has high resistivity to avoid shunting of a sense current caused by redeposition of the capping layer on the sidewalls of the tunnel barrier layer. Alternatively, the ?-TaN layer is the seed layer in the MTJ. Furthermore, the seed layer may be a composite layer comprised of a NiCr, NiFe, or NiFeCr layer on the ?-TaN layer. An ?-TaN capping layer or seed layer can also be used in a TMR read head. An MTJ formed on an ?-TaN capping layer has a high MR ratio, high Vb, and a RA similar to results obtained from MTJs based on an optimized Ta capping layer.Type: GrantFiled: June 30, 2004Date of Patent: November 3, 2009Assignee: Headway Technologies, Inc.Inventors: Liubo Hong, Cheng Horng, Mao-Min Chen, Ru-Yin Tong
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Publication number: 20060002184Abstract: An MRAM structure is disclosed in which the bottom electrode has an amorphous TaN capping layer to consistently provide smooth and dense growth for AFM, pinned, tunnel barrier, and free layers in an overlying MTJ. Unlike a conventional Ta capping layer, TaN is oxidation resistant and has high resistivity to avoid shunting of a sense current caused by redeposition of the capping layer on the sidewalls of the tunnel barrier layer. Alternatively, the ?-TaN layer is the seed layer in the MTJ. Furthermore, the seed layer may be a composite layer comprised of a NiCr, NiFe, or NiFeCr layer on the ?-TaN layer. An ?-TaN capping layer or seed layer can also be used in a TMR read head. An MTJ formed on an ?-TaN capping layer has a high MR ratio, high Vb, and a RA similar to results obtained from MTJs based on an optimized Ta capping layer.Type: ApplicationFiled: June 30, 2004Publication date: January 5, 2006Inventors: Liubo Hong, Cheng Horng, Mao-Min Chen, Ru-Yin Tong