Patents by Inventor Ru-Ying Tong

Ru-Ying Tong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10957851
    Abstract: A perpendicularly magnetized magnetic tunnel junction (p-MTJ) is disclosed wherein a boron containing free layer (FL) is subjected to a plasma treatment with inert gas, and a natural oxidation (NOX) process to form B2O3 before overlying layers are deposited. A metal layer such as Mg is deposited on the FL as a first step in forming a Hk enhancing layer that increases FL perpendicular magnetic anisotropy, or as a first step in forming a tunnel barrier layer on the FL. One or more anneal steps are essential in assisting B2O3 segregation from the free layer and thereby increasing the FL magnetic moment. A post-oxidation plasma treatment may also be used to partially remove B2O3 proximate to the FL top surface before the metal layer is deposited. Both plasma treatments use low power (<50 Watts) to remove a maximum of 2 Angstroms FL thickness.
    Type: Grant
    Filed: December 27, 2019
    Date of Patent: March 23, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Guenole Jan, Jodi Mari Iwata, Ru-Ying Tong, Huanlong Liu, Yuan-Jen Lee, Jian Zhu
  • Publication number: 20210020831
    Abstract: A magnetic tunnel junction (MTJ) is disclosed wherein a free layer (FL) interfaces with a first metal oxide (Mox) layer and second metal oxide (tunnel barrier) to produce perpendicular magnetic anisotropy (PMA) in the FL. In some embodiments, conductive metal channels made of a noble metal are formed in the Mox that is MgO to reduce parasitic resistance. In a second embodiment, a discontinuous MgO layer with a plurality of islands is formed as the Mox layer and a non-magnetic hard mask layer is deposited to fill spaces between adjacent islands and form shorting pathways through the Mox. In another embodiment, end portions between the sides of a center Mox portion and the MTJ sidewall are reduced to form shorting pathways by depositing a reducing metal layer on Mox sidewalls, or performing a reduction process with forming gas, H2, or a reducing species.
    Type: Application
    Filed: October 5, 2020
    Publication date: January 21, 2021
    Inventors: Sahil Patel, Guenole Jan, Ru-Ying Tong, Vignesh Sundar, Dongna Shen, Yu-Jen Wang, Po-Kang Wang, Huanlong Liu
  • Publication number: 20210020830
    Abstract: A dual magnetic tunnel junction (DMTJ) is disclosed with a PL1/TB1/free layer/TB2/PL2/capping layer configuration wherein a first tunnel barrier (TB1) has a substantially lower resistance x area (RA1) product than RA2 for an overlying second tunnel barrier (TB2) to provide an acceptable net magnetoresistive ratio (DRR). Moreover, magnetizations in first and second pinned layers, PL1 and PL2, respectively, are aligned antiparallel to enable a lower critical switching current than when in a parallel alignment. An oxide capping layer having a RACAP is formed on PL2 to provide higher PL2 stability. The condition RA1<RA2 and RACAP<RA2 is achieved when TB1 and the oxide capping layer have one or both of a smaller thickness and a lower oxidation state than TB2, are comprised of conductive (metal) channels in a metal oxide or metal oxynitride matrix, or are comprised of a doped metal oxide or doped metal oxynitride layer.
    Type: Application
    Filed: October 5, 2020
    Publication date: January 21, 2021
    Inventors: Vignesh Sundar, Yu-Jen Wang, Luc Thomas, Guenole Jan, Sahil Patel, Ru-Ying Tong
  • Publication number: 20210013260
    Abstract: A fabrication process for an STT MTJ MRAM device includes steps of cooling the device at individual or at multiple stages in its fabrication. The cooling process, which may be equally well applied during the fabrication of other multi-layered devices, is demonstrated to produce an operational device that is more resistant to adverse thermal effects during operation that would normally cause a similar device not so fabricated to lose stored data and otherwise fail to operate properly.
    Type: Application
    Filed: September 21, 2020
    Publication date: January 14, 2021
    Inventors: Huanlong Liu, Guenole Jan, Ru-Ying Tong, Jian Zhu, Yuan-Jen Lee, Jodi Mari Iwata, Sahil Patel, Vignesh Sundar
  • Publication number: 20200403143
    Abstract: A perpendicular magnetic tunnel junction is disclosed wherein first and second interfaces of a free layer (FL) with a first metal oxide (Hk enhancing layer) and second metal oxide (tunnel barrier), respectively, produce perpendicular magnetic anisotropy (PMA) to provide thermal stability to 400° C. Insertion of an oxidation control layer (OCL) such as Mg and a magnetic moment tuning layer (MMTL) like Mo or W enables FL thickness to be reduced below 10 Angstroms while providing sufficient PMA for a switching voltage substantially less than 500 mV at a 10 ns pulse width and 1 ppm defect rate. Magnetoresistive ratio is ?1, and resistance x area (RA) product is below 5 ohm-?m2. Embodiments are provided where MMTL and OCL materials interface with each other, or do not contact each other. Each of the MMTL and OCL materials may be deposited separately, or at least one is co-deposited with the FL.
    Type: Application
    Filed: June 21, 2019
    Publication date: December 24, 2020
    Inventors: Jodi Mari Iwata, Guenole Jan, Santiago Serrano Guisan, Luc Thomas, Ru-Ying Tong
  • Publication number: 20200403149
    Abstract: A perpendicular magnetic tunnel junction is disclosed wherein a metal insertion (MIS) layer is formed within a free layer (FL), a partially oxidized Hk enhancing layer is on the FL, and a nitride capping layer having a buffer layer/nitride layer (NL) is on the Hk enhancing layer to provide an improved coercivity (Hc)/switching current (Jc) ratio for spintronic applications. Magnetoresistive ratio is maintained above 100%, resistance×area (RA) product is below 5 ohm/?m2, and thermal stability to 400° C. is realized. The FL comprises two or more sub-layers, and the MIS layer may be formed within at least one sub-layer or between sub-layers. The buffer layer is used to prevent oxygen diffusion to the NL, and nitrogen diffusion from the NL to the FL. FL thickness is from 11 Angstroms to 25 Angstroms while MIS layer thickness is preferably from 0.5 Angstroms to 4 Angstroms.
    Type: Application
    Filed: June 21, 2019
    Publication date: December 24, 2020
    Inventors: Santiago Serrano Guisan, Luc Thomas, Jodi Mari Iwata, Guenole Jan, Ru-Ying Tong
  • Patent number: 10868235
    Abstract: A synthetic antiferromagnetic structure for a spintronic device is disclosed and has an FL2/Co or Co alloy/antiferromagnetic coupling/Co or Co alloy/CoFeB configuration where FL2 is a ferromagnetic free layer with intrinsic PMA. Antiferromagnetic coupling is improved by inserting a Co or Co alloy dusting layer on top and bottom surfaces of the antiferromagnetic coupling layer. The FL2 layer may be a L10 ordered alloy, a rare earth-transition metal alloy, or an (A1/A2)n laminate where A1 is one of Co, CoFe, or an alloy thereof, and A2 is one of Pt, Pd, Rh, Ru, Ir, Mg, Mo, Os, Si, V, Ni, NiCo, and NiFe, or A1 is Fe and A2 is V. A method is also provided for forming the synthetic antiferromagnetic structure.
    Type: Grant
    Filed: January 28, 2019
    Date of Patent: December 15, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Robert Beach, Guenole Jan, Yu-Jen Wang, Ru-Ying Tong
  • Patent number: 10816716
    Abstract: A quantum dot composite material and a manufacturing method and an application thereof are provided. The quantum dot composite material includes an all-inorganic perovskite quantum dot and a modification protection on a surface of the all-inorganic perovskite quantum dot. The all-inorganic perovskite quantum dot has a chemical formula of CsPb(ClaBr1-a-bIb)3, wherein 0?a?1, 0?b?1.
    Type: Grant
    Filed: August 23, 2019
    Date of Patent: October 27, 2020
    Assignee: LEXTAR ELECTRONICS CORPORATION
    Inventors: Hung-Chia Wang, Xue-Jie Zhang, Shin-Ying Lin, An-Cih Tang, Ru-Shi Liu, Tzong-Liang Tsai, Yu-Chun Lee, Ching-Yi Chen, Hung-Chun Tong
  • Patent number: 10797232
    Abstract: A magnetic tunnel junction (MTJ) is disclosed wherein a free layer (FL) interfaces with a first metal oxide (Mox) layer and second metal oxide (tunnel barrier) to produce perpendicular magnetic anisotropy (PMA) in the FL. In some embodiments, conductive metal channels made of a noble metal are formed in the Mox that is MgO to reduce parasitic resistance. In a second embodiment, a discontinuous MgO layer with a plurality of islands is formed as the Mox layer and a non-magnetic hard mask layer is deposited to fill spaces between adjacent islands and form shorting pathways through the Mox. In another embodiment, end portions between the sides of a center Mox portion and the MTJ sidewall are reduced to form shorting pathways by depositing a reducing metal layer on Mox sidewalls, or performing a reduction process with forming gas, H2, or a reducing species.
    Type: Grant
    Filed: December 27, 2019
    Date of Patent: October 6, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Sahil Patel, Guenole Jan, Ru-Ying Tong, Vignesh Sundar, Dongna Shen, Yu-Jen Wang, Po-Kang Wang, Huanlong Liu
  • Patent number: 10797225
    Abstract: A dual magnetic tunnel junction (DMTJ) is disclosed with a PL1/TB1/free layer/TB2/PL2/capping layer configuration wherein a first tunnel barrier (TB1) has a substantially lower resistance×area (RA1) product than RA2 for an overlying second tunnel barrier (TB2) to provide an acceptable net magnetoresistive ratio (DRR). Moreover, magnetizations in first and second pinned layers, PL1 and PL2, respectively, are aligned antiparallel to enable a lower critical switching current than when in a parallel alignment. An oxide capping layer having a RACAP is formed on PL2 to provide higher PL2 stability. The condition RA1<RA2 and RACAP<RA2 is achieved when TB1 and the oxide capping layer have one or both of a smaller thickness and a lower oxidation state than TB2, are comprised of conductive (metal) channels in a metal oxide or metal oxynitride matrix, or are comprised of a doped metal oxide or doped metal oxynitride layer.
    Type: Grant
    Filed: September 18, 2018
    Date of Patent: October 6, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Vignesh Sundar, Yu-Jen Wang, Luc Thomas, Guenole Jan, Sahil Patel, Ru-Ying Tong
  • Patent number: 10784310
    Abstract: A fabrication process for an STT MTJ MRAM device includes steps of cooling the device at individual or at multiple stages in its fabrication. The cooling process, which may be equally well applied during the fabrication of other multi-layered devices, is demonstrated to produce an operational device that is more resistant to adverse thermal effects during operation that would normally cause a similar device not so fabricated to lose stored data and otherwise fail to operate properly.
    Type: Grant
    Filed: November 8, 2018
    Date of Patent: September 22, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Huanlong Liu, Guenole Jan, Ru-Ying Tong, Jian Zhu, Yuan-Jen Lee, Jodi Mari Iwata, Sahil Patel, Vignesh Sundar
  • Publication number: 20200279993
    Abstract: A magnetic tunnel junction (MTJ) is disclosed wherein first and second interfaces of a free layer (FL) with a first metal oxide (Hk enhancing layer) and second metal oxide (tunnel barrier), respectively, produce perpendicular magnetic anisotropy (PMA) to increase thermal stability. In some embodiments, a capping layer that is a conductive metal nitride such as MoN contacts an opposite surface of the Hk enhancing layer with respect to the first interface to reduce interdiffusion of oxygen and nitrogen compared with a TiN capping layer and maintain an acceptable resistance x area (RA) product. In other embodiments, the capping layer may comprise an insulating nitride such as AlN that is alloyed with a conductive metal to minimize RA. Furthermore, a metallic buffer layer may be inserted between the capping layer and Hk enhancing layer. As a result, electrical shorts are reduced and the magnetoresistive ratio is increased.
    Type: Application
    Filed: May 18, 2020
    Publication date: September 3, 2020
    Inventors: Jodi Mari Iwata, Guenole Jan, Ru-Ying Tong, Vignesh Sundar, Jian Zhu, Huanlong Liu
  • Publication number: 20200279995
    Abstract: A magnetic tunnel junction with perpendicular magnetic anisotropy (PMA MTJ) is disclosed wherein a free layer interfaces with a tunnel barrier and has a second interface with an oxide layer. A lattice-matching layer adjoins an opposite side of the oxide layer with respect to the free layer and is comprised of CoXFeYNiZLWMV or an oxide or nitride of Ru, Ta, Ti, or Si, wherein L is one of B, Zr, Nb, Hf, Mo, Cu, Cr, Mg, Ta, Ti, Au, Ag, or P, and M is one of Mo, Mg, Ta, Cr, W, or V, (x+y+z+w+v)=100 atomic %, x+y>0, and each of v and w are >0. The lattice-matching layer grows a BCC structure during annealing thereby promoting BCC structure growth in the oxide layer that results in enhanced free layer PMA and improved thermal stability.
    Type: Application
    Filed: May 18, 2020
    Publication date: September 3, 2020
    Inventors: Huanlong Liu, Yuan-Jen Lee, Jian Zhu, Guenole Jan, Luc Thomas, Po-Kang Wang, Ru-Ying Tong, Jodi Iwata
  • Publication number: 20200243125
    Abstract: A perpendicularly magnetized magnetic tunnel junction (p-MTJ) is disclosed wherein a free layer (FL) has a first interface with a MgO tunnel barrier, a second interface with a Mo or W Hk enhancing layer, and is comprised of FexCoyBz wherein x is 66-80, y is 5-9, z is 15-28, and (x+y+z)=100 to simultaneously provide a magnetoresistive ratio >100%, resistance x area product <5 ohm/?m2, switching voltage <0.15 V (direct current), and sufficient Hk to ensure thermal stability to 400° C. annealing. The FL may further comprise one or more M elements such as O or N to give (FexCoyBz)wM100-w where w is >90 atomic %. Alternatively, the FL is a trilayer with a FeB layer contacting MgO to induce Hk at the first interface, a middle FeCoB layer for enhanced magnetoresistive ratio, and a Fe or FeB layer adjoining the Hk enhancing layer to increase thermal stability.
    Type: Application
    Filed: April 9, 2020
    Publication date: July 30, 2020
    Inventors: Hideaki Fukuzawa, Vignesh Sundar, Yu-Jen Wang, Ru-Ying Tong
  • Publication number: 20200212297
    Abstract: A complementary metal oxide semiconductor (CMOS) device comprises a first metal line, a first metal via on the first metal line, a magnetic tunneling junction (MTJ) device on the first metal via wherein the first metal via acts as a bottom electrode for the MTJ device, a second metal via on the MTJ device, and a second metal line on the second metal via.
    Type: Application
    Filed: December 31, 2018
    Publication date: July 2, 2020
    Inventors: Yi Yang, Vignesh Sundar, Dongna Shen, Sahil Patel, Ru-Ying Tong, Yu-Jen Wang
  • Patent number: 10665773
    Abstract: A magnetic tunnel junction (MTJ) is disclosed wherein first and second interfaces of a free layer (FL) with a first metal oxide (Hk enhancing layer) and second metal oxide (tunnel barrier), respectively, produce perpendicular magnetic anisotropy (PMA) to increase thermal stability. In some embodiments, a capping layer that is a conductive metal nitride such as MoN contacts an opposite surface of the Hk enhancing layer with respect to the first interface to reduce interdiffusion of oxygen and nitrogen compared with a TiN capping layer and maintain an acceptable resistance×area (RA) product. In other embodiments, the capping layer may comprise an insulating nitride such as AlN that is alloyed with a conductive metal to minimize RA. Furthermore, a metallic buffer layer may be inserted between the capping layer and Hk enhancing layer. As a result, electrical shorts are reduced and the magnetoresistive ratio is increased.
    Type: Grant
    Filed: January 26, 2018
    Date of Patent: May 26, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jodi Mari Iwata, Guenole Jan, Ru-Ying Tong, Vignesh Sundar, Jian Zhu, Huanlong Liu
  • Patent number: 10658577
    Abstract: A magnetic tunnel junction with perpendicular magnetic anisotropy (PMA MTJ) is disclosed wherein a free layer interfaces with a tunnel barrier and has a second interface with an oxide layer. A lattice-matching layer adjoins an opposite side of the oxide layer with respect to the free layer and is comprised of CoXFeYNiZLWMV or an oxide or nitride of Ru, Ta, Ti, or Si, wherein L is one of B, Zr, Nb, Hf, Mo, Cu, Cr, Mg, Ta, Ti, Au, Ag, or P, and M is one of Mo, Mg, Ta, Cr, W, or V, (x+y+z+w+v)=100 atomic %, x+y>0, and each of v and w are >0. The lattice-matching layer grows a BCC structure during annealing thereby promoting BCC structure growth in the oxide layer that results in enhanced free layer PMA and improved thermal stability.
    Type: Grant
    Filed: September 30, 2019
    Date of Patent: May 19, 2020
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Huanlong Liu, Yuan-Jen Lee, Jian Zhu, Guenole Jan, Luc Thomas, Po-Kang Wang, Ru-Ying Tong, Jodi Iwata
  • Publication number: 20200152698
    Abstract: A fabrication process for an STT MTJ MRAM device includes steps of cooling the device at individual or at multiple stages in its fabrication. The cooling process, which may be equally well applied during the fabrication of other multi-layered devices, is demonstrated to produce an operational device that is more resistant to adverse thermal effects during operation that would normally cause a similar device not so fabricated to lose stored data and otherwise fail to operate properly.
    Type: Application
    Filed: November 8, 2018
    Publication date: May 14, 2020
    Inventors: Huanlong Liu, Guenole Jan, Ru-Ying Tong, Jian Zhu, Yuan-Jen Lee, Jodi Mari Iwata, Sahil Patel, Vignesh Sundar
  • Publication number: 20200144486
    Abstract: A magnetic tunnel junction (MTJ) is disclosed wherein a free layer (FL) interfaces with a metal oxide (Mox) layer and a tunnel barrier layer to produce interfacial perpendicular magnetic anisotropy (PMA). The Mox layer has a non-stoichiometric oxidation state to minimize parasitic resistance, and comprises a dopant to fill vacant lattice sites thereby blocking oxygen diffusion through the Mox layer to preserve interfacial PMA and high thermal stability at process temperatures up to 400° C. Various methods of forming the doped Mox layer include deposition of the M layer in a reactive environment of O2 and dopant species in gas form, exposing a metal oxide layer to dopant species in gas form, and ion implanting the dopant. In another embodiment, where the dopant is N, a metal nitride layer is formed on a metal oxide layer, and then an anneal step drives nitrogen into vacant sites in the metal oxide lattice.
    Type: Application
    Filed: December 27, 2019
    Publication date: May 7, 2020
    Inventors: Guenole Jan, Jodi Mari Iwata, Ru-Ying Tong, Huanlong Lui, Yuan-Jen Lee, Jian Zhu
  • Publication number: 20200144492
    Abstract: A process flow for forming magnetic tunnel junction (MTJ) nanopillars with minimal sidewall residue and minimal sidewall damage is disclosed wherein a pattern is first formed in a hard mask that is an uppermost MTJ layer. Thereafter, the hard mask sidewall is etch transferred through the remaining MTJ layers including a reference layer, free layer, and tunnel barrier between the free layer and reference layer. The etch transfer may be completed in a single RIE step that features a physical component involving inert gas ions or plasma, and a chemical component comprised of ions or plasma generated from one or more of methanol, ethanol, ammonia, and CO. In other embodiments, a chemical treatment with one of the aforementioned chemicals, and a volatilization at 50° C. to 450° C. may follow an etch transfer through the MTJ stack with an ion beam etch or plasma etch involving inert gas ions.
    Type: Application
    Filed: December 27, 2019
    Publication date: May 7, 2020
    Inventors: Dongna Shen, Yu-Jen Wang, Ru-Ying Tong, Vignesh Sundar, Sahil Patel