Patents by Inventor Ruan Q. Yang

Ruan Q. Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5799026
    Abstract: A gain region for an interban quantum well laser incudes (a) an emitter ron of semiconductor material having at least one conduction subband and at least one valence subband, these subbands being spaced apart by an energy band-gap; (b) a collector region of semiconductor material having at least one conduction subband and at least one valence subband, these subbands spaced apart by an energy band-gap; (c) a type-I or type-II active region; and (d) a blocking quantum well region of semiconductor material between the active region and the collector region, for keeping electrons in the active region from tunnelling or scattering into the collector region, but allowing electrons in the highest valence subband in the active region to pass into the collector region.
    Type: Grant
    Filed: November 1, 1996
    Date of Patent: August 25, 1998
    Assignee: The United States of America as represented by the Secretary of the Navy
    Inventors: Jerry Meyer, Igor Vurgaftman, Ruan Q. Yang