Abstract: An underfill device and method have been are provided. Advantages of devices and methods shown include dissipation of stresses at an interface between components such as a chip package and an adjacent circuit board. Another advantage includes faster manufacturing time and ease of manufacture using underfill devices and methods shown. An underfill assembly can be pre made with conductive structures included within the underfill assembly. Steps such as flowing epoxy and curing can be eliminated or performed concurrently with other manufacturing steps.

Abstract: An underfill device and method have been are provided. Advantages of devices and methods shown include dissipation of stresses at an interface between components such as a chip package and an adjacent circuit board. Another advantage includes faster manufacturing time and ease of manufacture using underfill devices and methods shown. An underfill assembly can be pre made with conductive structures included within the underfill assembly. Steps such as flowing epoxy and curing can be eliminated or performed concurrently with other manufacturing steps.

Abstract: An underfill device and method have been are provided. Advantages of devices and methods shown include dissipation of stresses at an interface between components such as a chip package and an adjacent circuit board. Another advantage includes faster manufacturing time and ease of manufacture using underfill devices and methods shown. An underfill assembly can be pre made with conductive structures included within the underfill assembly. Steps such as flowing epoxy and curing can be eliminated or performed concurrently with other manufacturing steps.

Abstract: An IC package is disclosed that comprises a core region disposed between upper and lower build-up layer regions. In one embodiment, the core region comprises a low modulus material. In an alternative embodiment the core region comprises a medium modulus material. In an alternative embodiment, the core material is selected based upon considerations such as it modulus, its coefficient of thermal expansion, and/or the resulting total accumulated strain. In an alternative embodiment, boundaries with respect to the softness of the core material are established be considering the reflective density in opposing conductive build-up layers above and below the core region.

Abstract: An IC package is disclosed that comprises a core region disposed between upper and lower build-up layer regions. In one embodiment, the core region comprises a low modulus material. In an alternative embodiment the core region comprises a medium modulus material. In an alternative embodiment, the core material is selected based upon considerations such as its modulus, its coefficient of thermal expansion, and/or the resulting total accumulated strain. In an alternative embodiment, boundaries with respect to the softness of the core material are established by considering the relative density in opposing conductive build-up layers above and below the core region.

Abstract: An IC package is disclosed that comprises a core region disposed between upper and lower build-up layer regions. In one embodiment, the core region comprises a low modulus material. In an alternative embodiment the core region comprises a medium modulus material. In an alternative embodiment, the core material is selected based upon consideration such as its modulus, its coefficient of thermal expansion, and/or resulting total accumulated strain. In an alternative embodiment, boundaries with respect to the softness of the core material are established by considering the relative density in opposing conductive build-up layers above and below the core region.

Abstract: An IC package is disclosed that comprises a core region disposed between upper and lower build-up layer regions. In one embodiment, the core region comprises a low modulus material. In an alternative embodiment the core region comprises a medium modulus material. In an alternative embodiment, the core material is selected based upon considerations such as it modulus, its coefficient of thermal expansion, and/or the resulting total accumulated strain. In an alternative embodiment, boundaries with respect to the softness of the core material are established be considering the reflective density in opposing conductive build-up layers above and below the core region.

Abstract: An underfill device and method have been are provided. Advantages of devices and methods shown include dissipation of stresses at an interface between components such as a chip package and an adjacent circuit board. Another advantage includes faster manufacturing time and ease of manufacture using underfill devices and methods shown. An underfill assembly can be pre made with conductive structures included within the underfill assembly. Steps such as flowing epoxy and curing can be eliminated or performed concurrently with other manufacturing steps.

Abstract: An IC package is disclosed that comprises a core region disposed between upper and lower build-up layer regions. In one embodiment, the core region comprises a low modulus material. In an alternative embodiment the core region comprises a medium modulus material. In an alternative embodiment, the core material is selected based upon considerations such as its modulus, its coefficient of thermal expansion, and/or the resulting total accumulated strain. In an alternative embodiment, boundaries with respect to the softness of the core material are established by considering the relative density in opposing conductive build-up layers above and below the core region.