Patents by Inventor Ruben Esteban Llorente

Ruben Esteban Llorente has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Source of photons resulting from a recombination of localized excitons
    Patent number: 8541791
    Abstract: A source of photons resulting from a recombination of localized excitons, including a semiconductor layer having a central portion surrounded with heavily-doped regions; above said central portion, a layer portion containing elements capable of being activated by excitons, coated with a first metallization; and under the semiconductor layer, a second metallization of greater extension than the first metallization. The distance between the first and second metallizations is on the order of from 10 to 60 nm; and the lateral extension of the first metallization is on the order of from ?0/10*ne to ?0/2*ne, where ?0 is the wavelength in vacuum of the emitted light and ne is the effective refractive index of the mode formed in the cavity created by the two metallizations.
    Type: Grant
    Filed: December 15, 2010
    Date of Patent: September 24, 2013
    Assignees: STMicroelectronics (Grenoble) SAS, Commissariat à l'Énergie Atomique et aux Énergies Alternatives Centre National de la Recherche Scientifique
    Inventors: Roch Espiau de Lamaestre, Jean-Jacques Greffet, Bernard Guillaumot, Ruben Esteban Llorente
  • SOURCE OF PHOTONS RESULTING FROM A RECOMBINATION OF LOCALIZED EXCITONS
    Publication number: 20110204323
    Abstract: A source of photons resulting from a recombination of localized excitons, including a semiconductor layer having a central portion surrounded with heavily-doped regions; above said central portion, a layer portion containing elements capable of being activated by excitons, coated with a first metallization; and under the semiconductor layer, a second metallization of greater extension than the first metallization. The distance between the first and second metallizations is on the order of from 10 to 60 nm; and the lateral extension of the first metallization is on the order of from ?0/10*ne to ?0/2*ne, where ?0 is the wavelength in vacuum of the emitted light and ne is the effective refractive index of the mode formed in the cavity created by the two metallizations.
    Type: Application
    Filed: December 15, 2010
    Publication date: August 25, 2011
    Applicants: Commissariat à I'Energie Atomique et aux Energies Alternatives, Centre National de la Recherche Scientifique, STMicroelectronics (Grenoble) SAS
    Inventors: Roch Espiau de Lamaestre, Jean-Jacques Greffet, Bernard Guillaumot, Ruben Esteban Llorente