Abstract: A solar dark green glass and a vehicle are provided. The solar dark green glass includes a glass basic component and a glass tinted component. The solar dark green glass includes a glass basic component and a mass tinted component. The glass tinted component includes, as percentages by weight, 0.8%-2.0% total iron expressed as Fe2O3, 0.01%-0.6% TiO2, 0.001%-2.0% CeO2, 5 ppm-150 ppm Cr2O3, 15 ppm-60 ppm Zro2, 2 ppm-1000 ppm CuO, 5 ppm-50 ppm SrO, 80 ppm-200 ppm BaO, and 5 ppm-120 ppm Co2O3. A content of total iron expressed as Fe2O3 and a content of TiO2 total 1.0%-2.0%, and the content of TiO2 and a content of CeO2 total 0.2%-2.1%. The solar dark green glass manufactured has a thickness of 1.6 mm-2.1 mm, and solar direct transmittance less than or equal to 65%, infrared transmittance less than or equal to 45%, and ultraviolet transmittance less than or equal to 35%.

Abstract: A method and a device for matching an impedance of pulse radio frequency plasma, and a plasma processing device are provided. In the method, a matched frequency is searched for sequentially in high radio frequency power phases of an i-th pulse period and multiple pulse periods following the i-th pulse period, and a specific modulation frequency determined in a process of searching for the matched frequency in a previous pulse is assigned as an initial frequency for the subsequent pulse. In this way, it is equivalent to increasing a width of a first radio frequency power phase of a pulse period. Therefore, by sequentially performing frequency modulation in the first radio frequency power phases of the multiple pulses, a matched frequency of pulse radio frequency plasma of a high pulse frequency can be found, thereby achieving impedance matching of plasma of a high pulse frequency.

Abstract: Disclosed are a lift pin assembly, an electrostatic chuck with the lift pin assembly, and a processing apparatus where the electrostatic chuck is located. The lift pin assembly comprises: a lift pin, a lift pin receiving channel connected to a pressure control device, one end of the lift pin receiving channel proximal to a wafer being provided with a sealing ring, an upper surface of the sealing ring being in contact with a back face of the wafer during processing to avoid a gas at the back face of the wafer from entering the lift pin receiving channel, thereby enabling the pressure control device to independently control the pressure in the lift pin receiving channel.

Abstract: The present disclosure provides a lower electrode assembly and a plasma processing device in which the lower electrode assembly is located. The lower electrode assembly includes a base, including a main part and a step part extending outwardly from the main part, the step part being provided with a screw hole; a dielectric ring, disposed on the step part around the main part, a groove being formed in a bottom of the dielectric ring, and an opening of the groove being able to cover an opening of the screw hole; and a screw, having a head being located in the groove. By forming the groove inside the dielectric ring at an outer edge of the base, the head of the screw fixing the base is arranged in the groove so as to reduce a diameter of the hole formed in the base, so that an edge of the screw hole can be completely covered by the dielectric ring, and since the dielectric ring is made of an insulating material, a technical effect of avoiding arcing at the edge of the screw hole can be achieved.

Abstract: A plasma reactor includes: a process chamber, at the inner bottom of the process chamber being provided a base, the base being connected to a RF power source via a RF match network, wherein a to-be-processed wafer is held above the base, an upper electrode assembly is provided at the inner top of the process chamber, and a plasma processing space is arranged between the base and the upper electrode assembly; a first conductive ground ring surrounding the outer periphery of the base; a second conductive ground ring connected between the outer sidewall of the first conductive ground ring and the inner sidewall of the process chamber, a plurality of gas channels being provided on the second conductive ground ring such that gas in the plasma processing space can be exhausted through the plurality of gas channels; an insulating ring provided between the base and the first conductive ground ring, wherein dielectric constant of the insulating ring is less than 3.5.

Abstract: Disclosed is an electrostatic chuck, including a base and a disc structure disposed on the base, the upper surface of the disc structure being configured for holding a wafer, wherein a first through-hole is formed in the base, a shunt part is provided in the first through-hole to partition the first through-hole into a plurality of sub-through-holes, and a filled layer is formed between the shunt part and a sidewall of the first through-hole; and a second through-hole is provided in and axially penetrating through the disc structure, the diameter of the first through-hole being greater than the diameter of the second through-hole, the second through-hole communicating with the first through-hole.

Abstract: A method and a device for matching an impedance of pulse radio frequency plasma, and a plasma processing device are provided. In the method, a matched frequency is searched for sequentially in high radio frequency power phases of an i-th pulse period and multiple pulse periods following the i-th pulse period, and a specific modulation frequency determined in a process of searching for the matched frequency in a previous pulse is assigned as an initial frequency for the subsequent pulse. In this way, it is equivalent to increasing a width of a first radio frequency power phase of a pulse period. Therefore, by sequentially performing frequency modulation in the first radio frequency power phases of the multiple pulses, a matched frequency of pulse radio frequency plasma of a high pulse frequency can be found, thereby achieving impedance matching of plasma of a high pulse frequency.

Abstract: The present invention provides a temperature adjusting apparatus for a focus ring, wherein heat radiated from the plasma onto the focus ring is transferred downward to a base through the first heat conducting pad contacting a lower surface of the focus ring, an insulating ring contacting a lower surface of the first heat conducting pad, and the second heat conducting pad contacting a lower surface of the insulating ring, so as to be cooled by a cooling system provided at the base; turning on a heater disposed in a grounded shielding ring to generate a controllable external heating source, heat from the heater being transferred to the focus ring through the shielding ring, a third heat conducting pad contacting the shielding ring, the insulating ring contacting the third heat conducting pad, and the first heat conducting pad, so as to perform controllable warming to the focus ring.

Abstract: Disclosed are a lift pin assembly, an electrostatic chuck with the lift pin assembly, and a processing apparatus where the electrostatic chuck is located. The lift pin assembly comprises: a lift pin, a lift pin receiving channel connected to a pressure control device, one end of the lift pin receiving channel proximal to a wafer being provided with a sealing ring, an upper surface of the sealing ring being in contact with a back face of the wafer during processing to avoid a gas at the back face of the wafer from entering the lift pin receiving channel, thereby enabling the pressure control device to independently control the pressure in the lift pin receiving channel.

Abstract: The present invention provides a temperature adjusting apparatus for a focus ring, wherein heat radiated from the plasma onto the focus ring is transferred downward to a base through the first heat conducting pad contacting a lower surface of the focus ring, an insulating ring contacting a lower surface of the first heat conducting pad, and the second heat conducting pad contacting a lower surface of the insulating ring, so as to be cooled by a cooling system provided at the base; turning on a heater disposed in a grounded shielding ring to generate a controllable external heating source, heat from the heater being transferred to the focus ring through the shielding ring, a third heat conducting pad contacting the shielding ring, the insulating ring contacting the third heat conducting pad, and the first heat conducting pad, so as to perform controllable warming to the focus ring.