Patents by Inventor Ruby Liao

Ruby Liao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6319324
    Abstract: A method and apparatus for reducing surface sensitivity of a TEOS/O3 SACVD silicon oxide layer, formed over a substrate, that deposits a ramp layer while ramping pressure to a target deposition pressure and deposits an SACVD layer over the ramp layer. In one embodiment, the flow of ozone is stopped during the pressure ramp-up to control the thickness of the ramp layer.
    Type: Grant
    Filed: September 14, 2000
    Date of Patent: November 20, 2001
    Assignee: Applied Materials, Inc.
    Inventors: Bang C. Nguyen, Shankar Vankataranan, Ruby Liao, Peter W. Lee
  • Patent number: 6149974
    Abstract: A method and apparatus for reducing surface sensitivity of a TEOS/O.sub.3 SACVD silicon oxide layer, formed over a substrate, that deposits a ramp layer while ramping pressure to a target deposition pressure and deposits an SACVD layer over the ramp layer. In one embodiment, the flow of ozone is stopped during the pressure ramp-up to control the thickness of the ramp layer.
    Type: Grant
    Filed: May 5, 1997
    Date of Patent: November 21, 2000
    Assignee: Applied Materials, Inc.
    Inventors: Bang C. Nguyen, Shankar Vankataranan, Ruby Liao, Peter W. Lee