Abstract: A method for erasing a memory cell includes applying a first erase to memory cells to erase the memory cells, wherein first memory cells are in a weakly erased state in response to the first erase, and wherein second memory cells are in a normally erased state in response to the first erase, thereafter applying a first weak program to the memory cells, wherein the second memory cells enter a programmed state and the third memory cells remain in the erased state in response to the first weak program, and thereafter applying a read to the memory cells to identify the second memory cells, and applying a second erase to the second memory cells to thereby erase the second memory cells.

Abstract: One potential result of differing characteristics for certain two-terminal memory (TTM) is that memory management techniques, such as logical-to-physical (L2P), can differ as well. Previous memory management techniques do not adequately leverage the advantages associated with TTM. For example, by identifying and leveraging certain advantageous characteristics of TTM, L2P tables can be designed to be smaller and more efficient. Moreover, other memory management operations such as wear-leveling, recovery from power loss, and so forth, can be more efficient.

Abstract: A method for erasing a memory cell includes applying a first erase to memory cells to erase the memory cells, wherein first memory cells are in a weakly erased state in response to the first erase, and wherein second memory cells are in a normally erased state in response to the first erase, thereafter applying a first weak program to the memory cells, wherein the second memory cells enter a programmed state and the third memory cells remain in the erased state in response to the first weak program, and thereafter applying a read to the memory cells to identify the second memory cells, and applying a second erase to the second memory cells to thereby erase the second memory cells.

Abstract: A method for erasing a memory cell includes applying a first erase to memory cells to erase the memory cells, wherein first memory cells are in a weakly erased state in response to the first erase, and wherein second memory cells are in a normally erased state in response to the first erase, thereafter applying a first weak program to the memory cells, wherein the second memory cells enter a programmed state and the third memory cells remain in the erased state in response to the first weak program, and thereafter applying a read to the memory cells to identify the second memory cells, and applying a second erase to the second memory cells to thereby erase the second memory cells.

Abstract: One potential result of differing characteristics for certain two-terminal memory (TTM) is that memory management techniques, such as logical-to-physical (L2P), can differ as well. Previous memory management techniques do not adequately leverage the advantages associated with TTM. For example, by identifying and leveraging certain advantageous characteristics of TTM, L2P tables can be designed to be smaller and more efficient, which can allow the L2P table to be stored in memory that is faster and/or closer (or integrated into) an associated controller. Moreover, other memory management operations such as wear-leveling, recovery from power loss, and so forth, can be more efficient.

Abstract: A method for erasing a memory cell includes applying a first erase to memory cells to erase the memory cells, wherein first memory cells are in a weakly erased state in response to the first erase, and wherein second memory cells are in a normally erased state in response to the first erase, thereafter applying a first weak program to the memory cells, wherein the second memory cells enter a programmed state and the third memory cells remain in the erased state in response to the first weak program, and thereafter applying a read to the memory cells to identify the second memory cells, and applying a second erase to the second memory cells to thereby erase the second memory cells.

Abstract: One potential result of differing characteristics for certain two-terminal memory (TTM) is that memory management techniques, such as logical-to-physical (L2P), can differ as well. Previous memory management techniques do not adequately leverage the advantages associated with TTM. For example, by identifying and leveraging certain advantageous characteristics of TTM, L2P tables can be designed to be smaller and more efficient. Moreover, other memory management operations such as wear-leveling, recovery from power loss, and so forth, can be more efficient.