Patents by Inventor Rudi Hengl

Rudi Hengl has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11493546
    Abstract: A method (200) and a connection test device (100; 300) for checking an intermittent impedance variation in a first and/or a second line (110; 302, 334) are described. The connection test device (100; 300) comprises a transmitter (102; 308) having a test signal generator (106) for generating a test signal and a first test point (108; 304) for connecting the first (110; 302) or the second line (334), wherein the test signal generator (106) supplies the test signal to the first (110; 302) or the second line (334) via the first test point (108; 304). The connection test device (100; 300) further comprises a first receiver (104; 310) having a second test point (112; 306, 336) for connecting the first (110; 302) or second line (334) and a receiver front end (114; 326, 328) which receives an incoming signal from the first (110; 302) or second line (334) via the second test point (112; 306, 336).
    Type: Grant
    Filed: February 10, 2021
    Date of Patent: November 8, 2022
    Assignee: WEETECH GMBH
    Inventor: Rudi Hengl
  • Publication number: 20220187352
    Abstract: A method (200) and a connection test device (100; 300) for checking an intermittent impedance variation in a first and/or a second line (110; 302, 334) are described. The connection test device (100; 300) comprises a transmitter (102; 308) having a test signal generator (106) for generating a test signal and a first test point (108; 304) for connecting the first (110; 302) or the second line (334), wherein the test signal generator (106) supplies the test signal to the first (110; 302) or the second line (334) via the first test point (108; 304). The connection test device (100; 300) further comprises a first receiver (104; 310) having a second test point (112; 306, 336) for connecting the first (110; 302) or second line (334) and a receiver front end (114; 326, 328) which receives an incoming signal from the first (110; 302) or second line (334) via the second test point (112; 306, 336).
    Type: Application
    Filed: February 10, 2021
    Publication date: June 16, 2022
    Inventor: Rudi Hengl
  • Patent number: 10020805
    Abstract: A bidirectional MOSFET switch is provided. The switch includes an input terminal, an output terminal and two MOSFET transistors which are connected to one another by their source and gate terminals. The input and the output terminals are connected to a respective drain terminal of the two MOSFET transistors. The switch further includes a control input terminal that is galvanically isolated by a potential isolator and connected to a control unit configured to switch a control current for a FET transistor via a further MOSFET transistor. The FET transistor is configured to generate, by the control current, a gate voltage Vgs between the gate and the source at the two MOSFET transistors for the switching thereof, and a floating voltage source, which is galvanically connected to the input and which is configured to generate a gate control current for the two MOSFET transistors.
    Type: Grant
    Filed: June 10, 2016
    Date of Patent: July 10, 2018
    Assignee: Weetech GmbH
    Inventors: Rudi Hengl, Christian Reuter
  • Publication number: 20160365854
    Abstract: A bidirectional MOSFET switch is provided. The switch includes an input terminal, an output terminal and two MOSFET transistors which are connected to one another by their source and gate terminals. The input and the output terminals are connected to a respective drain terminal of the two MOSFET transistors. The switch further includes a control input terminal that is galvanically isolated by a potential isolator and connected to a control unit configured to switch a control current for a FET transistor via a further MOSFET transistor. The FET transistor is configured to generate, by the control current, a gate voltage Vgs between the gate and the source at the two MOSFET transistors for the switching thereof, and a floating voltage source, which is galvanically connected to the input and which is configured to generate a gate control current for the two MOSFET transistors.
    Type: Application
    Filed: June 10, 2016
    Publication date: December 15, 2016
    Inventors: Rudi Hengl, Christian Reuter