Abstract: The invention provides an ultrasound imaging system, comprising an array of transducer elements grouped into element groups, wherein the element groups comprise a plurality of first element groups (having a first orientation) and a plurality of second element groups (having a second orientation different from the first orientation). A first conductor is connected to each of the elements in each first element grouping and a second conductor is connected to each of the elements in each second element grouping. Each element group is adapted to be activated for transmission or reception by the application of a bias voltage, by way of a plurality of bias voltage circuits, and controlled by a plurality of transmit and receive circuits. The system is adapted to acquire first ultrasound data, wherein the bias voltage is applied to the first conductors of the array (or a sub-array) and the transducers receive a signal from a transmit and receive circuit.

Abstract: The present invention relates to an electronic component, that comprises, on a substrate, at least one integrated MIM capacitor, (114) an electrically insulating first cover layer (120) which partly or fully covers the top capacitor electrode (118) and is made of a lead-containing dielectric material, and a top barrier layer (122) on the first cover layer. The top barrier layer serves for avoiding a reduction of lead atoms comprised by the first cover layer under exposure of the first cover layer to a reducing substance. An electrically insulating second cover layer (124) on the top barrier layer has a dielectric permittivity smaller than that of the first cover layer establishes a low parasitic capacitance of the cover-layer structure. The described cover-layer structure with the intermediate top barrier layer allows to fabricate a high-accuracy resistor layer (126.1) on top.

Abstract: The present invention relates to an electronic component, that comprises, on a substrate, at least one integrated MIM capacitor, (114) an electrically insulating first cover layer (120) which partly or fully covers the top capacitor electrode (118) and is made of a lead-containing dielectric material, and a top barrier layer (122) on the first cover layer. The top barrier layer serves for avoiding a reduction of lead atoms comprised by the first cover layer under exposure of the first cover layer to a reducing substance. An electrically insulating second cover layer (124) on the top barrier layer has a dielectric permittivity smaller than that of the first cover layer establishes a low parasitic capacitance of the cover-layer structure. The described cover-layer structure with the intermediate top barrier layer allows to fabricate a high-accuracy resistor layer (126.1) on top.