Patents by Inventor Rudiyanto Gunawan

Rudiyanto Gunawan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods for controlling dopant concentration and activation in semiconductor structures
    Patent number: 7846822
    Abstract: The present invention provides methods for fabricating semiconductor structures and devices, particularly ultra-shallow doped semiconductor structures exhibiting low electrical resistance. Methods of the present invention use modification of the composition of semiconductor surfaces to allow fabrication of a doped semiconductor structure having a selected dopant concentration depth profile, which provides useful junctions and other device components in microelectronic and nanoelectronic devices, such as transistors in high density integrated circuits. Surface modification in the present invention also allows for control of the concentration and depth profile of defects, such as interstitials and vacancies, in undersaturated semiconductor materials.
    Type: Grant
    Filed: July 28, 2005
    Date of Patent: December 7, 2010
    Assignee: The Board of Trustees of the University of Illinois
    Inventors: Edmund G. Seebauer, Richard D. Braatz, Michael Yoo Lim Jung, Rudiyanto Gunawan
  • Methods for controlling dopant concentration and activation in semiconductor structures
    Publication number: 20060024928
    Abstract: The present invention provides methods for fabricating semiconductor structures and devices, particularly ultra-shallow doped semiconductor structures exhibiting low electrical resistance. Methods of the present invention use modification of the composition of semiconductor surfaces to allow fabrication of a doped semiconductor structure having a selected dopant concentration depth profile, which provides useful junctions and other device components in microelectronic and nanoelectronic devices, such as transistors in high density integrated circuits. Surface modification in the present invention also allows for control of the concentration and depth profile of defects, such as interstitials and vacancies, in undersaturated semiconductor materials.
    Type: Application
    Filed: July 28, 2005
    Publication date: February 2, 2006
    Applicant: The Board of Trustees of the University of Illinois
    Inventors: Edmund Seebauer, Richard Braatz, Michael Jung, Rudiyanto Gunawan