Abstract: A break resistant sapphire plate and a corresponding production process. The sapphire plate may include a planar sapphire substrate, and at least one shock absorbing layer arranged on a surface of the substrate. The shock absorbing layer may have a thickness of between 0.1% to 10% of the thickness of the substrate. The production process for producing the sapphire plate may include providing a planar sapphire substrate, and coating at least one surface of the substrate with a shock absorbing layer. The shock absorbing layer may include a layer thickness between 0.1% to 10% of the thickness of the substrate.

Abstract: A surface-tensioned sapphire plate and a corresponding manufacturing process. The plate may include a planar sapphire substrate and at least one layer disposed on the surface of the substrate for tensing the substrate. The layer may include at least 50 wt.-% of aluminum oxide (Al2O3). The manufacturing process for producing of a sapphire plate may include providing a planar sapphire substrate, and coating at least one surface of the substrate with a layer tensing the substrate. The layer may include at least 50 wt.-% of aluminum oxide (Al2O3).

Abstract: A break resistant sapphire plate and a corresponding production process. The sapphire plate may include a planar sapphire substrate, and at least one shock absorbing layer arranged on a surface of the substrate. The shock absorbing layer may have a thickness of between 0.1% to 10% of the thickness of the substrate. The production process for producing the sapphire plate may include providing a planar sapphire substrate, and coating at least one surface of the substrate with a shock absorbing layer. The shock absorbing layer may include a layer thickness between 0.1% to 10% of the thickness of the substrate.

Abstract: A surface-tensioned sapphire plate and a corresponding manufacturing process. The plate may include a planar sapphire substrate and at least one layer disposed on the surface of the substrate for tensing the substrate. The layer may include at least 50 wt.-% of aluminum oxide (Al2O3). The manufacturing process for producing of a sapphire plate may include providing a planar sapphire substrate, and coating at least one surface of the substrate with a layer tensing the substrate. The layer may include at least 50 wt.-% of aluminum oxide (Al2O3).

Abstract: A method for cleaning at least one component arranged in the inner region of a plasma process chamber using a cleaning gas including fluorine gas, where the process chamber has at least one electrode and counter-electrode for generating a plasma for plasma treatment, where the inner region is exposed to gaseous fluorine compounds with a partial pressure of greater than 5 mbar, where the process chamber has at least one electrode and counter-electrode for generating a plasma, and the fluorine gas is thermally activated by means of a temperature-regulating means, where the component to be cleaned has a temperature of<350° C.

Abstract: Method and device for the plasma treatment of a substrate in a plasma device, wherein—the substrate (110) is arranged between an electrode (112) and a counter-electrode (108) having a distance d between a surface area of the substrate to be treated and the electrode, —a capacitively coupled plasma discharge is excited, forming a DC self-bias between the electrode (112) and the counter-electrode (108), —in an area of the plasma discharge between the surface area to be treated and the electrode having a quasineutral plasma bulk (114), a quantity of at least one activatable gas species, to which a surface area of the substrate to be treated is subjected, is present —it is provided that a plasma discharge is excited, —wherein the distance d has a value comparable to s=se+sg, where se denotes a thickness of a plasma boundary layer (119) in front of the electrode, and sg denotes a thickness of a plasma boundary layer (118) in front of the substrate surface to be treated or —wherein the quasineutral plasma bulk (114

Abstract: The invention relates to a high-frequency plasma beam source with a plasma chamber for a plasma, electrical means for applying an electrical voltage to the high-frequency plasma beam source to ignite and maintain the plasma, extraction means for extracting a plasma beam (I) from the plasma chamber as well as an exit opening, which is separated from the vacuum chamber by an extraction grid. The plasma beam (I) exits with a substantially divergent radiation characteristic from the high-frequency plasma beam source. The invention furthermore relates to a method for the irradiation of a surface with a plasma beam (I) of a high-frequency plasma beam source, the plasma beam (I) being divergent.

Abstract: The invention relates to a plasma source whose plasma is ignited by an electric voltage. To be able to carry out the ignition at relatively low voltages, a plate (5) provided with holes (13, 14) is provided beneath a plasma volume (17), which is disposed above a wall (21) of a plasma chamber (3). Through this plate (5) an ignition volume (16) is formed beneath the plasma volume (17) with a higher pressure than in the plasma volume (17), in which the plasma ignites first. The ignition is subsequently propagated through the holes of the plate (5) into the plasma volume (17).

Abstract: The invention relates to a plasma source whose plasma is ignited by means of an electric voltage. To be able to carry out the ignition at relatively low voltages, a plate (5) provided with holes (13, 14) is provided beneath a plasma volume (17), which is disposed above a wall (21) of a plasma chamber (3). Through this plate (5) an ignition volume (16) is formed beneath the plasma volume (17) with a higher pressure than in the plasma volume (17), in which the plasma ignites first. The ignition is subsequently propagated through the holes of the plate (5) into the plasma volume (17).

Abstract: A new and distinct cultivar of Poinsettia plant named ‘Fisson Beckpink’, as described and illustrated, and particularly characterized by the combined features of intense hot pink bract color; medium sized, star-shaped inflorescence with distinctly lobed bracts; uniform dark-green foliage, with relatively strong lobes; moderately compact, well-branched, and round plant habit; medium (mid season) flowering response; and good after-sale keeping quality of the bracts and the cyathia.

Abstract: A process for coating plastic substrates with a transparent layer compact that is not sensitive to scratches and abrasion and resistant to atmospheric influence with a plasma flame in a vacuum chamber at some distance from the substrate. The process includes the steps of: a cleaning of the substrate with an oxidizing gas in a first procedural step and then a cross linkage with an inert gas in a second procedural step, an oxidizing gas and a silicon-organic compound are used in a third procedural step to produce a first barrier layer, and an oxidizing gas, a silicon-organic compound, and a UV-absorbing compound are used in a fourth procedural step to deposit a sublayer with UV absorbers, an oxidizing gas and a silicon-organic compound are used in a fifth procedural step to deposit a scratch-resistant layer, an inert gas and a silicon-organic compound are used in a sixth procedural step to deposit a smooth layer.

Abstract: A process and device is shown for coating the delineating surfaces of a hollow object, preferably a hollow object having at least one sealable opening, by means of plasma coating, via the action of plasma on the delineating surface of the hollow object that is to be coated.

Abstract: A new and distinct cultivar of Poinsettia plant named ‘Fisson Beckpink’, as described and illustrated, and particularly characterized by the combined features of intense hot pink bract color; medium sized, star-shaped inflorescence with distinctly lobed bracts; uniform dark-green foliage, with relatively strong lobes; moderately compact, well-branched, and round plant habit; medium (mid season) flowering response; and good after-sale keeping quality of the bracts and the cyathia.

Abstract: A new and distinct cultivar of Poinsettia plant named ‘Giant Red’, characterized by its inflorescences with red-colored flower bracts; dark green-colored leaves; uniform and rounded plant habit; early flowering habit; and excellent post-production longevity.

Abstract: A new and distinct cultivar of Begonia plant named ‘Celina’, characterized by its compact, upright and rounded plant habit, double flowers that are light orange in color and held above and beyond the foliage; and excellent postproduction longevity.

Abstract: A new and distinct cultivar of Begonia plant named ‘Maren Top’, characterized by its compact, upright and rounded plant habit; double flowers that are pink in color and held above and beyond the foliage; and excellent postproduction longevity.

Abstract: A new and distinct cultivar of Begonia plant named ‘Caroline’, characterized by its compact, upright and rounded plant habit; double flowers that are light red purple in color and held above and beyond the foliage; and excellent postproduction longevity.

Abstract: A new and distinct cultivar of Begonia plant named ‘Janina’, characterized by its compact, upright and rounded plant habit; double flowers that are light orange in color and held above and beyond the foliage; and excellent postproduction longevity.

Abstract: A new and distinct cultivar of Begonia plant named ‘Kaya’, characterized by its compact, upright and rounded plant habit; double flowers that are pink in color and held above and beyond the foliage; and excellent postproduction longevity.

Abstract: A distinct cultivar of poinsettia plant named Beckmanns Altrosa, characterized by the combined traits of salmon pink bract color, medium tall and well branched plant habit, medium green foliage, medium early flowering response, and good stability of bract color upon maturation.