Patents by Inventor Rudolf Emmanuel Isidor Schropp

Rudolf Emmanuel Isidor Schropp has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconducting devices and method of making thereof
    Patent number: 6750474
    Abstract: The invention relates to a process for providing a semiconducting device including the steps of depositing a semiconducting layer onto a substrate by means of heating a gas to a predetermined, disassociation temperature so that the gas dissociates into fractions, whereby these fractions subsequently condense on the substrate to build up a semiconducting layer.
    Type: Grant
    Filed: May 10, 2001
    Date of Patent: June 15, 2004
    Assignee: Debye Instituut. Universiteit Ultrecht
    Inventors: Hans Meiling, Rudolf Emmanuel Isidor Schropp
  • Semiconducting devices and method of making thereof
    Patent number: 6686230
    Abstract: A process for providing a semiconducting device including the steps of depositing a semiconducting layer onto a substrate by means of heating a gas to a predetermined dissociation temperature so that the gas dissociates into fractions, whereby those fractions subsequently condense on the substrate to build up a semiconducting layer.
    Type: Grant
    Filed: August 5, 1999
    Date of Patent: February 3, 2004
    Assignee: Debye Instituut, Universiteit Utrecht
    Inventors: Hans Meiling, Rudolf Emmanuel Isidor Schropp
  • SEMICONDUCTING DEVICES AND METHOD OF MAKING THEREOF
    Publication number: 20020132411
    Abstract: The invention relates to a process for providing a semiconducting device comprising the steps of depositing a semiconducting layer onto a substrate by means of heating a gas to a predetermined, dissociation temperature so that the gas dissociates into fractions, whereby these fractions subsequently condense on the substrate to build up a semiconducting layer.
    Type: Application
    Filed: August 5, 1999
    Publication date: September 19, 2002
    Inventors: HANS MEILING, RUDOLF EMMANUEL ISIDOR SCHROPP
  • Semiconducting devices and method of making thereof
    Publication number: 20010052596
    Abstract: The invention relates to a process for providing semiconducting device comprising the steps of depositing a semiconducting layer onto a substrate by heating a gas to a predetermined dissociation temperature so that the gas dissociates into fractions, whereby these fractions subsequently condense on the substrate to build up a semiconducting layer.
    Type: Application
    Filed: March 13, 2001
    Publication date: December 20, 2001
    Inventors: Hans Meiling, Rudolf Emmanuel Isidor Schropp