Abstract: A combustion chamber is provided and includes a combustion device and a supply circuit arranged to feed fuel at a plurality of locations of the combustion device. The supply circuit includes manifolds collecting fuel to be distributed among at least some of the locations, ducts extending from the manifolds and feeding the locations. Some of the ducts carry valves having a plurality of predetermined working positions, each working position corresponding to a different fuel flow through the valve.

Abstract: A method and a system for providing fusing after packaging of semiconductor devices are disclosed. In one embodiment, a semiconductor device is provided comprising a substrate comprising a fuse area, at least one fuse disposed in the fuse area, and at least one layer disposed over the substrate, wherein the at least one layer comprises at least one opening exposing the at least one fuse.

Abstract: A burner arrangement is disclosed with a conical swirler in the form of a double cone which is arranged concentric to a burner axis and which encloses a swirl chamber, and with a central fuel lance which lies in the burner axis and projects from the cone point of the swirler into the swirl chamber, wherein a first stage is provided for injecting premix fuel, in which the premix fuel is injected radially outwards into the swirl chamber through injection openings which are arranged on the fuel lance, and wherein a second stage is provided for injecting premix fuel, in which the premix fuel is injected into an air flow, which is guided in the double cone, through injection openings in the double cone. With such a burner arrangement, the gas pressure which is required in the first stage is reduced by the entire premix fuel being injected into the swirl chamber in the first stage through two oppositely-disposed injection openings with increased opening diameter.

Abstract: A semiconductor module comprises a wafer package comprising an integrated circuit (IC) device embedded within the wafer package and a layer comprising at least one antenna structure and redistribution structures, wherein the antenna structure is coupled to the IC device and wherein the redistribution structures are coupled to the IC device.

Abstract: A semiconductor module, comprises a package molding compound layer comprising an integrated circuit (IC) device embedded within a package molding compound, the integrated circuit device and the package molding compound having a common surface. Structures are formed to connect the semiconductor module to an external board, the structures electrically connected to the integrated circuit device. A layer is formed on the common surface, the layer comprising at least one integrated antenna structure, the integrated antenna structure being coupled to the IC device.

Abstract: A semiconductor module having one or more integrated antennas in a single package is provided herein. The semiconductor module has a bonding interconnect structure that connects an integrated package to a printed circuit board (PCB), wherein the integrated antenna structures are located at greater center-to-center distance from the IC device than the three dimensional interconnect structures. Therefore, the bonding interconnect structures are confined to a connection area that causes a part of the package containing the one or more antenna structures to extend beyond the bonding interconnect structure as a cantilevered structure. Such a bonding interconnect structure result in a package that is in contact with a PCB at a relatively small area that supports the load of the package.

Abstract: A semiconductor module comprises components in one wafer level package. The module comprises an integrated circuit (IC) chip embedded within a package molding compound. The package comprises a molding compound package layer coupled to an interface layer for integrating an antenna structure and a bonding interconnect structure to the IC chip. The bonding interconnect structure comprises three dimensional interconnects. The antenna structure and bonding interconnect structure are coupled to the IC chip and integrated within the interface layer in the same wafer fabrication process.

Abstract: A semiconductor module having one or more integrated antennas in a single package is provided herein to comprise a bonding interconnect structure having a plurality of individual bonding elements that are confined to a relatively small area of the bottom of a package. In particular, the semiconductor module comprises a bonding interconnect structure configured to connect an integrated package to a printed circuit board (PCB), wherein the integrated antenna structures are located at greater center-to-center distance from the IC device than the three dimensional interconnect structures. Therefore, the bonding interconnect structures are confined to a connection area that causes a part of the package containing the one or more antenna structures to extend beyond the bonding interconnect structure as a cantilevered structure. Such a bonding interconnect structure result in a package that is in contact with a PCB at a relatively small area that supports the load of the package.

Abstract: A method is provided for switching over a gas turbine burner operation from liquid fuel to gas fuel and vice-versa, with the burner comprising nozzles for feeding a premixed gas fuel, nozzles for injecting a pilot gas fuel and nozzles for injecting a liquid fuel. According to the method, while the liquid fuel and the premix gas fuel are regulated to switch over from liquid fuel to gas fuel operation or vice-versa, the pilot gas fuel is controlled at a substantially constant flow rate.

Abstract: A semiconductor module comprises components in one wafer level package. The module comprises an integrated circuit (IC) chip embedded within a package molding compound. The package comprises a molding compound package layer coupled to an interface layer for integrating an antenna structure and a bonding interconnect structure to the IC chip. The bonding interconnect structure comprises three dimensional interconnects. The antenna structure and bonding interconnect structure are coupled to the IC chip and integrated within the interface layer in the same wafer fabrication process.

Abstract: A method and a system for providing fusing after packaging of semiconductor devices are disclosed. In one embodiment, a semiconductor device is provided comprising a substrate comprising a fuse area, at least one fuse disposed in the fuse area, and at least one layer disposed over the substrate, wherein the at least one layer comprises at least one opening exposing the at least one fuse.

Abstract: A method includes providing a first semiconductor chip comprising a ring-shaped metal structure extending along a contour of a first main surface of the semiconductor chip. The method includes encapsulating the first semiconductor chip with an encapsulation body thereby defining a second main surface and depositing a metal layer over the first semiconductor chip and the encapsulation body. A plurality of external contact pads are placed over the second main surface of the encapsulation body, the metal layer electrically coupling at least one external contact pad of the plurality of external contact pads to the ring-shaped metal structure. A seal ring is placed between the ring-shaped metal structure and the contour of the first main surface of the first semiconductor chip.

Abstract: A combustion chamber is provided and includes a combustion device and a supply circuit arranged to feed fuel at a plurality of locations of the combustion device. The supply circuit includes manifolds collecting fuel to be distributed among at least some of the locations, ducts extending from the manifolds and feeding the locations. Some of the ducts carry valves having a plurality of predetermined working positions, each working position corresponding to a different fuel flow through the valve.

Abstract: A semiconductor module having one or more integrated antennas in a single package is provided herein to comprise a bonding interconnect structure having a plurality of individual bonding elements that are confined to a relatively small area of the bottom of a package. In particular, the semiconductor module comprises a bonding interconnect structure configured to connect an integrated package to a printed circuit board (PCB), wherein the integrated antenna structures are located at greater center-to-center distance from the IC device than the three dimensional interconnect structures. Therefore, the bonding interconnect structures are confined to a connection area that causes a part of the package containing the one or more antenna structures to extend beyond the bonding interconnect structure as a cantilevered structure. Such a bonding interconnect structure result in a package that is in contact with a PCB at a relatively small area that supports the load of the package.

Abstract: A device includes a semiconductor chip with a ring-shaped metal structure extending along the contour of a first main surface of the semiconductor chip. An encapsulation body encapsulates the semiconductor chip and defines a second main surface. An array of external contact pads attaches to the second main surface of the encapsulation body, and at least one external contact pad of the array of external contact pads electrically couples to the ring-shaped metal structure.

Abstract: A method for fabricating a transistor structure with a first and a second bipolar transistor having different collector widths is presented. The method includes providing a semiconductor substrate, introducing a first buried layer of the first bipolar transistor and a second buried layer of the second bipolar transistor into the semiconductor substrate, and producing at least a first collector region having a first collector width on the first buried layer and a second collector region having a second collector width on the second buried layer. A first collector zone having a first thickness is produced on the second buried layer for production of the second collector width. A second collector zone having a second thickness is produced on the first collector zone. At least one insulation region is produced that isolates at least the collector regions from one another.

Abstract: One embodiment relates to a method for determining a concentration of a molecular species of interest. In this method, electromagnetic radiation is transmitted into a volume of gas within an output exhaust system. The transmitted electromagnetic radiation has a first intensity at a characteristic frequency that is associated with a transition of the molecular species of interest. Electromagnetic radiation is then received from the volume of gas at a second intensity. The method then correlates the first intensity to the second intensity to determine the concentration of the molecular species of interest within the volume of gas. Other methods and systems are also disclosed.

Abstract: One or more embodiments relate to a semiconductor chip including a capacitor arrangement, the capacitor arrangement comprising: a first capacitor; and a second capacitor stacked above the first capacitor, the first capacitor and the second capacitor coupled in series between a first metallization level and a second metallization level adjacent the first metallization level.

Abstract: A method for operating a gas turbine plant utilizing sequential combustion is provided. The gas turbine plant includes a compressor for compressing inducted combustion air, a first combustion chamber for combustion of a first fuel by utilizing the compressed combustion air, with a first turbine which is connected downstream of the first combustion chamber, and a second combustion chamber for combustion of a second fuel by utilizing the gases which emerge from the first turbine, with a second turbine which is connected downstream of the second combustion chamber. The method provides quick running up with simultaneously low emissions and homogeneous distribution of the turbine inlet temperature is achieved by the second combustion chamber being completely shut down for achieving a low partial load mode of the gas turbine plant.

Abstract: A device includes a semiconductor chip with a ring-shaped metal structure extending along the contour of a first main surface of the semiconductor chip. An encapsulation body encapsulates the semiconductor chip and defines a second main surface. An array of external contact pads attaches to the second main surface of the encapsulation body, and at least one external contact pad of the array of external contact pads electrically couples to the ring-shaped metal structure.