Abstract: By treating the silicon-oxide insulating layer of a semiconductor device with an aqueous metal-salt solution of a metal of an ion radius of less than 0.110 nm, for example, Sc, La or Zr, before a platinum electrode layer is provided on the insulating layer, the platinum layer shows excellent adhesive properties.

Abstract: A method for fracturing semiconductor crystal wafers or bars to form individual chips with active devices without the use of mechanical scribing of the crystal. The method involves forming where fracture is desired a shallow trench by etching in the semiconductor wafer or bar, preferably with sharp corners, or providing over where the fracture is desired the edges of a metallization layer, or both. Applying pressure will then cause the crystal to fracture as a result of strains formed in the crystal at the sharp corners or below the metallization edges. The method is particularly suitable for the fabrication of laser chips from compound semiconductors.

Abstract: An etching composition and method for its use in etching a semiconductor structure, the semiconductor structure comprising a substrate and one or more epitaxial layers. The etching composition comprises a solvent, an etchant, and first and second complexing agents, the etchant and complexing agents being soluble in the solvent. The etchant preferentially etches the substrate with respect to at least one epitaxial layer. The first complexing agent is reactive with the substrate so as to accelerate the rate at which the etchant etches the substrate. The second completing agent is reactive with a component of the at least one epitaxial layer so as to form a resulting compound with the component. This reaction establishes an equilibrium between the resulting compound, the second complexing agent and the component, the equilibrium precluding significant etching of the at least one epitaxial layer.

Abstract: A method for manufacturing a ridge in a channel laser diode in II-VI materials by etching grooves to form an active mesa flanked by support mesas. The method involves using certain etchants for certain compositions of the II-VI layers so that the grooves can be formed by wet chemical etching using only a single photolithographic process.

Abstract: In the known method, a plate of a heat-conducting material, for example silicon, is subdivided by means of grooves into blocks which remain connected to one another along break-off edges. The plate is metallized on two sides and (locally) provided with layer-shaped regions comprising solder at the upper side, the diode laser being fastened within each region, after which the blocks are separated from one another by breaking-off. A disadvantage of this method is that the blocks thus obtained are not suitable for a final mounting in which the radiation beam of the diode laser is perpendicular to the carrier plate on which the support body is fastened.

Abstract: Optoelectronic devices often comprise an optoelectronic semiconductor element such as a diode laser fastened on a carrier. The desired path of a beam of radiation from or to such an element often implies that such an element has to be fastened on the carrier at a certain, for example right angle. As a result, a contact surface of such an element also encloses an angle with another contact surface which lies on the carrier. In a method according to the invention, one of the two contact surfaces is provided with a wire which has a free end, and after fastening of the diode laser or photodiode the free end of the wire is fastened on the other contact surface. One wire connection can suffice and no auxiliary block is necessary with this wire connection method in two steps. Preferably, the wire having the free end is provided on the element.

Abstract: In the method according to the invention, the upper and thicker of two semiconductor layers is etched by means of a selective and preferential etchant, substantially no underetching occurring with respect to the mask. Subsequently, the lower and thinner semiconductor layer and a part of the upper semiconductor layer are converted by a substantially non-selective anodic oxidation into semiconductor material oxides, which are removed by means of an etchant which is non-selective with respect to the oxides formed, but is selective with respect to the semiconductor materials. As a result, mesas are obtained having a substantially flat side wall, the lateral dimension of these mesas being accurately determined by the size of the mask. Thus, particularly favourable results are obtained, especially in the InP/InGaAsP material system. The method according to the invention can be used very advantageously when the thinner layer forms part of a so-called multilayer quantum well structure.

Abstract: The invention relates a method of manufacturing a semiconductor laser device having a coating on surfaces of a semiconductor body intended for emanation of a laser beam.

Abstract: The invention relates to a semiconductor laser device having a coating on surfaces of a semiconductor body intended for emanation of a laser beam. For protection of these surfaces against attack during operation of the laser this coating comprises a layer of a compound having at least one alkyl group.

Abstract: A semiconductor laser having mirror faces serving as resonators, in which the active laser region (2) includes end zones adjoining the mirror faces which have implanted ions, preferably protons, with associated crystal damage. The end zones have a length which is at least equal to the diffusion length of the recombining charge carriers in the end zones. As a result of the high recombination rate in the end zones substantially no non-radiating recombination occurs at the mirror faces so that mirror erosion is avoided.The invention relates to a method in which the end zones are formed by an ion bombardment on the upper surface of the semiconductor wafer with a number of lasers, which wafer at the area of the mirror (cleavage) faces to be formed is provided with grooves which do not extend up to the active layer, in which grooves the end zones are provided via an ion bombardment through the active layer.

Abstract: A semiconductor laser having mirror faces serving as resonators, in which the active laser region includes end zones adjoining the mirror faces which have implanted ions, preferably protons, with associated crystal damage. The end zones have a length which is at least equal to the diffusion length of the recombining charge carriers in the end zones. As a result of the high recombination rate in the end zones substantially no non-radiating recombination occurs at the mirror faces, so that mirror erosion is avoided.

Abstract: Deep cavities and apertures can be obtained with little undercutting (great etching factor) by etching in an artificial gravitational field (under the influence of centrifugal or centripetal forces).

Abstract: An electroluminescent semiconductor device such as a semiconductor laser has epitaxial monocrystalline layers (3 to 6), including an active layer (4), grown on a substrate (2). The epitaxial layers are etched in the presence of an etching mask (8) to form nonplanar mirror surfaces (9) which in the longitudinal direction bound active regions (10). To form flat and parallel mirrors (12) an epitaxial monocrystalline protective layer (11) is grown from the gaseous phase on the mirror surfaces after etching. The etching can be carried out in two stages using different etchants. With the first etchant the etched layers taken on a swallow-tail profile and then with the second etchant they take on a concave profile.

Abstract: A semiconductor injection laser includes two contact regions on two oppositely-located major surfaces of the semiconductor body. One of these contact regions is divided into two sub-contact regions which are separated by a gap, and the active zone of the laser can be moved in a direction transverse to that of the laser beam by controlling the current distribution between the two sub-contact regions in order to move the laser beam.

Abstract: A method of manufacturing semiconductor devices using laser beam cutting is disclosed in which the surface debris or pollution resulting from the laser beam cutting operation is removed by a preferential etching treatment. Since the polluting particles are of nonmonocrystalline semiconductor material, while the underlying material of the semiconductor disc is monocrystalline in nature, the polluting particles may be selectively removed in an effective manner by preferentially etching the nonmonocrystalline material of the particles with respect to the monocrystalline material of the disc. This preferential etching treatment may advantageously be carried out prior to the severing of the semiconductor disc to form the individual semiconductor devices.

Abstract: A method of manufacturing a device in which a surface of a body is provided with a gold layer masking against a proton bombardment, in which the gold pattern is formed by means of a photoetching process, the gold pattern is removed after the subsequent proton bombardment of the body. The masking gold layer is obtained by providing on the body a quantity of gold simultaneously with a quantity of an addition which is small as compared with the quantity of gold.

Abstract: A method of manufacturing a semiconductor device for generating laser beams is disclosed in which the mirror faces of the device are subjected to an oxidation treatment which includes an electrolytic oxidation step.

Abstract: The invention relates to a method of manufacturing a body having a gold pattern in which an etchant-resistant and electrically insulating masking layer is provided locally on the surface of a gold layer present on the body and parts of the surface of the gold layer not covered by the masking layer are subjected to a chemical etching treatment in an etching bath in which the gold pattern is formed. According to the invention, the gold layer during the chemical etching treatment is given a potential with respect to an electrode in the etching bath and this potential is adjusted to a value such that the etch rate is maintained at a rate no higher than the rate of the chemical etching treatment.