Abstract: Unknown particles on a surface of a semiconductor wafer are classified by applying a range of particles of known chemical composition and different sizes onto a test wafer, measuring the sizes of a plurality of the particles and spectrally analyzing a makeup of the particles by energy-dispersive x-ray spectroscopy, followed by ascertaining a substantive content therefrom; creating a best-fit curve to the size and substantive content of the particles; measuring the particle size of an unknown particle and recording its spectrum by energy-dispersive x-ray spectroscopy and classifying the unknown particle as the result of a comparison of the size and the substantive content of the unknown particle with the best-fit curve.

Abstract: A semiconductor wafer has an edge region with no defects larger than or equal to 0.3 ?m. The wafers are produced by a process, comprising (a) providing a semiconductor wafer having a rounded and etched edge; (b) polishing the edge of the semiconductor wafer, in which step the semiconductor wafer, which is held on a centrally rotating chuck and projects beyond the chuck and at least one polishing drum which is inclined by a specific angle with respect to the chuck, rotates centrally and is covered with a polishing cloth, are moved toward one another and pressed onto one another under a specific contact pressure with a polishing abrasive being supplied continuously; (c) cleaning the semiconductor wafer; (d) inspecting an edge region of the semiconductor wafer using an inspection unit; and (e) further processing the semiconductor wafer.

Abstract: A semiconductor wafer has an edge region with no defects larger than or equal to 0.3 ?m. The wafers are produced by a process, comprising (a) providing a semiconductor wafer having a rounded and etched edge; (b) polishing the edge of the semiconductor wafer, in which step the semiconductor wafer, which is held on a centrally rotating chuck and projects beyond the chuck and at least one polishing drum which is inclined by a specific angle with respect to the chuck, rotates centrally and is covered with a polishing cloth, are moved toward one another and pressed onto one another under a specific contact pressure with a polishing abrasive being supplied continuously; (c) cleaning the semiconductor wafer; (d) inspecting an edge region of the semiconductor wafer using an inspection unit; and (e) further processing the semiconductor wafer.