Abstract: In a method of implanting ions in a target, an ion beam is directed onto the target by means of an electrostatic deflection system where the beam describes a pattern over the target dependent on voltage variations on two mutually perpendicular sets of deflection plates. One of the sets of deflection plates is subjected to a varying voltage difference and the other set of deflection plates is subjected to a constant voltage difference so that the ion beam describes a straight line on the target, while at the end of the beam stroke a fixed voltage difference is superimposed on the plates having a constant voltage difference and the variation in the voltage difference is reversed in the plates having a varying voltage difference in such manner that lines described consecutively by the ion beam are always parallel and are situated at a fixed distance from each other.

Abstract: A device for directing electrically charged particles towards a target present on a connection place of a support comprises an electrostatic deflection system having deflection plates for controlling a beam of charged particles in two mutually perpendicular directions towards the target with the deflection plates being brought at a desired voltage by means of an electronic control system, and two juxtaposed rods of electrically conductive material being provided on oppositely located sides of the target with the rods being each connected by a resistor to a fixed potential and being furthermore connected to a control device which reacts to a voltage which arises across the resistors if the beam of electrically charged particles impinges on a rod and which, if the beam, during each stroke across the target, impinges on a combination of rods other than the two innermost rods, produces a correction voltage for the control of the deflection plates.