Abstract: A colored substrate and a method for producing a substrate having a colored interference filter layer containing a polycrystalline metal oxide or polycrystalline metal oxides with the aid of physical or chemical vapor deposition using a coating system, in particular with the aid of a sputtering gas, in which at least two, in particular at least six, coating layers are vapor deposited one on top of the other forming polycrystalline metal oxides in each case.

Abstract: A colored substrate and a method for producing a substrate having a colored interference filter layer containing a polycrystalline metal oxide or polycrystalline metal oxides with the aid of physical or chemical vapor deposition using a coating system, in particular with the aid of a sputtering gas, in which at least two, in particular at least six, coating layers are vapor deposited one on top of the other forming polycrystalline metal oxides in each case.

Abstract: A process and a device for coating a strip in which the strip is transported along a strip guide inside a coating chamber. At least two guide elements of the strip guide are positioned a certain distance apart, their longitudinal axes being arranged at a slant to each other in such a way that the distance between the guide elements varies along the longitudinal axes. The strip is conducted along the guide elements inside the coating chamber in such a way that at least two sections of the strip are traveling essentially adjacent to each other as they are being coated.

Abstract: A resistive film includes carbon (40-95 at. %), one or more metal(s) (4-60 at.%) and hydrogen (1-30 at. %). The film has a resistivity in excess of 1000 .mu..OMEGA.cm and a temperature coefficient TC in the range of between -100 and +100 ppm/K.

Abstract: A resistive component which is composed of one or more resistive films which, if necessary, may be provided on a substrate, and at least one of which is on the basis of CrSi, the resistive film on the basis of CrSi comprising 5-50 at. % Cr, 10-70 at. % Si, 5-50 at. % O and at least one element of the group formed by B, C and N in a concentration of 1-50 at. %. The advantageous properties of the resistive component in accordance with the invention are based on the reactive incorporation of oxygen and carbon or oxygen and nitogen or oxygen and carbon and nitrogen into resistive films on the basis of CrSi.

Abstract: The invention relates to a resistive film comprising carbon (40-95 at. %), one or more metal(s) (4-60 at. %) and hydrogen (1-30 at. %), said film having a resistivity in excess of 1000.mu..OMEGA.cm and a temperature coefficient TC in the range between -100 and +100 ppm/K.