Patents by Inventor Rudolf Tromp
Rudolf Tromp has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 8586923Abstract: Embodiments of the invention relate to electron microscopy. Example embodiments relate to an apparatus including a first electron beam source, a second electron beam source, and a receiving unit. The first electron beam source is configured to provide a first low-voltage electron beam to a surface of a sample. The second electron beam source is configured to provide a second low-voltage electron beam to pass through the sample. The receiving unit is configured to analyze the first low-voltage electron beam, or the second low-voltage electron beam, or both the first and the second electron beam to obtain information about the sample.Type: GrantFiled: June 21, 2012Date of Patent: November 19, 2013Assignee: International Business Machines CorporationInventor: Rudolf Tromp
-
Patent number: 8586919Abstract: Embodiments of the invention relate to electron microscopy. Example embodiments relate to an apparatus including a first electron beam source, a second electron beam source, and a receiving unit. The first electron beam source is configured to provide a first low-voltage electron beam to a surface of a sample. The second electron beam source is configured to provide a second low-voltage electron beam to pass through the sample. The receiving unit is configured to analyze the first low-voltage electron beam, or the second low-voltage electron beam, or both the first and the second electron beam to obtain information about the sample.Type: GrantFiled: June 28, 2012Date of Patent: November 19, 2013Assignee: International Business Machines CorporationInventor: Rudolf Tromp
-
Patent number: 8465799Abstract: Techniques for producing atomic step-free silicon carbide surfaces are provided. In one aspect, a method for eliminating atomic steps from a silicon carbide surface is provided. The method comprises the following step. The silicon carbide and a silicon-containing gas are contacted at a temperature, background pressure, and for a length of time sufficient to re-arrange the silicon carbide to an atomic step-free surface. The silicon carbide surface can be the top of a mesa or the bottom of a hole patterned in a silicon carbide wafer.Type: GrantFiled: September 18, 2008Date of Patent: June 18, 2013Assignee: International Business Machines CorporationInventors: James B. Hannon, Rudolf Tromp
-
Patent number: 7955585Abstract: Separation of carbon nanotubes or fullerenes according to diameter through non-covalent pi-pi interaction with molecular clips is provided. Molecular clips are prepared by Diels-Alder reaction of polyacenes with a variety of dienophiles. The pi-pi complexes of carbon nanotubes with molecular clips are also used for selective placement of carbon nanotubes and fullerenes on substrates.Type: GrantFiled: May 14, 2010Date of Patent: June 7, 2011Assignee: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Cherie R. Kagan, Rudolf Tromp
-
Patent number: 7883685Abstract: Separation of carbon nanotubes or fullerenes according to diameter through non-covalent pi-pi interaction with molecular clips is provided. Molecular clips are prepared by Diels-Alder reaction of polyacenes with a variety of dienophiles. The pi-pi complexes of carbon nanotubes with molecular clips are also used for selective placement of carbon nanotubes and fullerenes on substrates.Type: GrantFiled: May 27, 2010Date of Patent: February 8, 2011Assignee: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Cherie R. Kagan, Rudolf Tromp
-
Patent number: 7879307Abstract: Separation of carbon nanotubes or fullerenes according to diameter through non-covalent pi-pi interaction with molecular clips is provided. Molecular clips are prepared by Diels-Alder reaction of polyacenes with a variety of dienophiles. The pi-pi complexes of carbon nanotrubes with molecular clips are also used for selective placement of carbon nanotubes and fullerenes on substrates.Type: GrantFiled: May 28, 2010Date of Patent: February 1, 2011Assignee: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Cherie R. Kagan, Rudolf Tromp
-
Patent number: 7867469Abstract: Separation of carbon nanotubes or fullerenes according to diameter through non-covalent pi-pi interaction with molecular clips is provided. Molecular clips are prepared by Diels-Alder reaction of polyacenes with a variety of dienophiles. The pi-pi complexes of carbon nanotubes with molecular clips are also used for selective placement of carbon nanotubes and fullerenes on substrates.Type: GrantFiled: May 10, 2010Date of Patent: January 11, 2011Assignee: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Cherie R. Kagan, Rudolf Tromp
-
Publication number: 20100320438Abstract: Separation of carbon nanotubes or fullerenes according to diameter through non-covalent pi-pi interaction with molecular clips is provided. Molecular clips are prepared by Diels-Alder reaction of polyacenes with a variety of dienophiles. The pi-pi complexes of carbon nanotubes with molecular clips are also used for selective placement of carbon nanotubes and fullerenes on substrates.Type: ApplicationFiled: May 14, 2010Publication date: December 23, 2010Applicant: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Cherie R. Kagan, Rudolf Tromp
-
Publication number: 20100297833Abstract: Separation of carbon nanotubes or fullerenes according to diameter through non-covalent pi-pi interaction with molecular clips is provided. Molecular clips are prepared by Diels-Alder reaction of polyacenes with a variety of dienophiles. The pi-pi complexes of carbon nanotrubes with molecular clips are also used for selective placement of carbon nanotubes and fullerenes on substrates.Type: ApplicationFiled: May 28, 2010Publication date: November 25, 2010Applicant: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Cherie R. Kagan, Rudolf Tromp
-
Publication number: 20100291759Abstract: Separation of carbon nanotubes or fullerenes according to diameter through non-covalent pi-pi interaction with molecular clips is provided. Molecular clips are prepared by Diels-Alder reaction of polyacenes with a variety of dienophiles. The pi-pi complexes of carbon nanotubes with molecular clips are also used for selective placement of carbon nanotubes and fullerenes on substrates.Type: ApplicationFiled: May 10, 2010Publication date: November 18, 2010Applicant: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Cherie R. Kagan, Rudolf Tromp
-
Patent number: 7771695Abstract: Separation of carbon nanotubes or fullerenes according to diameter through non-covalent pi-pi interaction with molecular clips is provided. Molecular clips are prepared by Diels-Alder reaction of polyacenes with a variety of dienophiles. The pi-pi complexes of carbon nanotrubes with molecular clips are also used for selective placement of carbon nanotubes and fullerenes on substrates.Type: GrantFiled: July 21, 2006Date of Patent: August 10, 2010Assignee: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Cherie R. Kagan, Rudolf Tromp
-
Publication number: 20100170418Abstract: Separation of carbon nanotubes or fullerenes according to diameter through non-covalent pi-pi interaction with molecular clips is provided. Molecular clips are prepared by Diels-Alder reaction of polyacenes with a variety of dienophiles. The pi-pi complexes of carbon nanotrubes with molecular clips are also used for selective placement of carbon nanotubes and fullerenes on substrates.Type: ApplicationFiled: July 21, 2006Publication date: July 8, 2010Applicant: International Business Machines CorporationInventors: Ali Afzali-Ardakani, Cherie R. Kagan, Rudolf Tromp
-
Publication number: 20100065988Abstract: Techniques for producing atomic step-free silicon carbide surfaces are provided. In one aspect, a method for eliminating atomic steps from a silicon carbide surface is provided. The method comprises the following step. The silicon carbide and a silicon-containing gas are contacted at a temperature, background pressure, and for a length of time sufficient to re-arrange the silicon carbide to an atomic step-free surface. The silicon carbide surface can be the top of a mesa or the bottom of a hole patterned in a silicon carbide wafer.Type: ApplicationFiled: September 18, 2008Publication date: March 18, 2010Applicant: International Business Machines CorporationInventors: James B. Hannon, Rudolf Tromp
-
Publication number: 20070200062Abstract: An energy filtering microscopy instrument is provided. An objective lens is disposed for reception of electrons in order to form an electron diffraction pattern in a backfocal plane of the objective lens. An entrance aperture disposed in the backfocal plane of the objective lens for filtering a slice of the electron diffraction pattern. A magnetic deflector has an entrance plane and an exit plane. The entrance aperture is disposed in the entrance plane. The magnetic deflector is disposed to receive the slice of the electron diffraction pattern and project an energy dispersed electron diffraction pattern to the exit plane. An exit aperture is disposed in the exit plane of the magnetic deflector for selection of desired electron energy of the energy dispersed electron diffraction pattern.Type: ApplicationFiled: February 28, 2006Publication date: August 30, 2007Applicant: International Business Machines CorporationInventor: Rudolf Tromp
-
Publication number: 20070200070Abstract: An aberration-correcting microscopy instrument is provided. The instrument has a first magnetic deflector disposed for reception of a first non-dispersed electron diffraction pattern. The first magnetic deflector is also configured for projection of a first energy dispersed electron diffraction pattern in an exit plane of the first magnetic deflector. The instrument also has an electrostatic lens disposed in the exit plane of a first magnetic deflector, as well as a second magnetic deflector substantially identical to the first magnetic deflector. The second magnetic deflector is disposed for reception of the first energy dispersed electron diffraction pattern from the electrostatic lens. The second magnetic deflector is also configured for projection of a second non-dispersed electron diffraction pattern in a first exit plane of the second magnetic deflector.Type: ApplicationFiled: February 28, 2006Publication date: August 30, 2007Applicant: International Business Machines CorporationInventor: Rudolf Tromp