Abstract: A zero insertion force connector for electrically and mechanically connecting the terminal pins of a pin grid array semiconductor device to corresponding terminal pins on a printed wiring board. The connector includes first and second identically molded plastic substrates, each having a grid pattern of apertures therethrough where the grid corresponds to the spacing of the terminal pins on the pin grid array semiconductor device. Formed proximate one end of each of the rectangular apertures is a rectangular post which projects outwardly from a major surface of the substrate and which has a height approximately equal to the thickness dimension of the substrate, such that when the first substrate is inverted relative to the second substrate, the projecting posts of one will fit into the rectangular apertures of the other.

Abstract: An improved light transducer such as a solar cell and, especially, a concentrator solar cell, together with processes for forming the same which permit the formation of light transducers characterized by their improved efficiency, especially, at concentration ratios on the order of 100 Suns and greater; and, more particularly, an improved process for forming concentrator solar cell electrodes, and improved concentrator solar cells produced thereby, characterized in that the electrodes comprise a multiplicity of closely spaced, fine-line--i.e., preferably on the order of less than about 1.0 mils in width--electroplated electrodes which are on the order of at least as thick as they are wide and, preferably which are at least 0.7 mils in thickness yet, which are characterized by their relatively sharp, vertical edge profiles and which are essentially devoid of lateral "spread" of the electroplated electrode materials.

Abstract: An electrically conductive, anti-reflective coating is formed on a base layer of prepared silicon in such a manner as to form a good ohmic contact therewith. If doped, the coating can serve as an impurity source during a following diffusion step, in which a PN junction is formed in the silicon. Undoped coatings may be used when the PN junction has previously been formed in the silicon. Thick film electrical contacts are then formed by screen printing on the top surface of the anti-reflective coating and then fired at high temperature, i.e. 500.degree.-1000.degree. C. The material comprising the coating is such that it acts as a barrier to the diffusion of the metal forming the electrical contacts into the silicon base layer during the firing of the thick film contacts. Since the coating is electrically conductive, a conductive path between the contacts and the silicon is established.

Abstract: A solar cell including a dielectric isolation member to electrically isolate an active region of the cell from the unfinished edge thereof and to protect the p-n junction from surface contaminants. The isolation member is fabricated on top of a semiconductor wafer before diffusion.