Abstract: A bottle cap (10) having a top (12) and a downwardly depending skirt (14). Skirt (14) includes an angled upper portion (20) and a generally cylindrical lower portion (22) with an exterior bead (24) thereon. Angled upper skirt portion (20) extends from a perimeter bead (23) down to a locking bead (34), which allows upper skirt (20) to transfer an application force from perimeter bead (23) radially to locking bead (34) in order to push the locking bead down around the upper crown (42) of a bottle neck (40). A method of applying the bottle cap is also disclosed.

Abstract: A bottle cap (10) having a top (12) and a downwardly depending skirt (14). Skirt (14) includes an angled upper portion (20) and a generally cylindrical lower portion (22) with an exterior bead (24) thereon. Angled upper skirt portion (20) extends from a perimeter bead (23) down to a locking bead (34), which allows upper skirt (20) to transfer an application force from perimeter bead (23) radially to locking bead (34) in order to push the locking bead down around the upper crown (42) of a bottle neck (40). A method of applying the bottle cap is also disclosed.

Abstract: A bottle cap (10) having a top panel (12) and a downwardly depending skirt (14). Skirt (14) includes an angled upper portion (20) and a generally cylindrical lower portion (22) with an exterior bead (24) thereon. Angled upper skirt portion (20) extends from a perimeter bead (23) down to a locking bead (34), which allows upper skirt (20) to transfer an application force from perimeter bead (23) radially to locking bead (34) in order to push the locking bead down around the upper crown (42) of a bottle neck (40).

Abstract: A bottle cap (10) having a top panel (12) and a downwardly depending skirt (14). Skirt (14) includes an angled upper portion (20) and a generally cylindrical lower portion (22) with an exterior bead (24) thereon. Angled upper skirt portion (20) extends from a perimeter bead (23) down to a locking bead (34), which allows upper skirt (20) to transfer an application force from perimeter bead (23) radially to locking bead (34) in order to push the locking bead down around the upper crown (42) of a bottle neck (40).

Abstract: A bottle cap (10) having a top panel (12) with an inner skirt (16) and an outer skirt (14) having an exterior bead (24) at the bottom edge thereof. Exterior bead (24) includes an inward projection as well. Outer skirt (14) has a reduced thickness in order to reduce the mass of the cap and exterior bead (24) provides sufficient de-ovalization support to keep skirt 14 cylindrical in shape.

Abstract: A bottle cap has a tab formed with internal gripping features which engage mating features on the bottle neck to retain the cap in place until a portion of the skirt is torn. A tab extends from below the bottom edge of the cap. At least one vertical score lines extends up from the bottom edge of the skirt. In one form of the invention, there are two vertical score lines, one on each side of the tab and one preferably extending higher than the other. A rib is formed on either external side edge of the tab and extending partially upward on the exterior of the skirt. The tab angles outward relative to a downward projection of the skirt.

Abstract: A reference diode and a method for making same are described, wherein a single wafer of semiconductive material is processed to provide a reverse PN junction acting in its breakdown region and to provide one or more forward PN junctions in electrical series with the reverse junction. A wafer of semiconductive material of one conductivity type is diffused with an impurity to form a plurality of regions of semiconductive material of opposite conductivity type. The regions are laterally displaced from each other and each forms a reverse PN junction at the interface between the region and the remainder of the wafer. An impurity is then diffused into one or more of these regions to form one or more forward PN junctions. An additional reverse PN junction is then formed between and adjacent to two of the previously formed regions.

Abstract: A reference diode and a method for making same are described, wherein a single wafer of semiconductive material is processed to provide a reverse PN junction acting in its breakdown region and to provide one or more forward PN junctions in electrical series with the reverse junction. A wafer of semiconductive material of one conductivity type is diffused with an impurity to form a plurality of regions of semiconductive material of opposite conductivity type. The regions are laterally displaced from each other and each forms a reverse PN junction at the interface between the region and the remainder of the wafer. An impurity is then diffused into one or more of these regions to form one or more forward PN junctions. An additional reverse PN junction is then formed between and adjacent to two of the previously formed regions.