Abstract: Disclosed herein are an exemplary apparatus, system, and methods (e.g., Tactical Passive RFID transponder gloves with Morphological Actuation) comprising a glove made predominately of a resistive fabric that varies resistance per degree of deformation; comprising near field communication RFID tag readers, and a controller coupled to the glove to evaluate the varied resistance. A method of classifying RFID tags is also disclosed.

Abstract: Disclosed herein are an exemplary apparatus, system, and methods (e.g., Tactical Passive RFID transponder gloves with Morphological Actuation) comprising a glove made predominately of a resistive fabric that varies resistance per degree of deformation; comprising near field communication RFID tag readers, and a controller coupled to the glove to evaluate the varied resistance. A method of classifying RFID tags is also disclosed.

Abstract: Disclosed are system 100 and method of energy efficient hot and cold water management. The system 100 comprises: a control unit 101 for dynamically controlling the functioning of the system 100; at least a water storage tank 102 with at least one of a water level sensor, at least a heating element 1021, at least a temperature sensor 1022 or any combination thereof; at least an auxiliary water storage tank 103 with at least one of a water level sensor, at least a temperature sensor 1032; at least a water mixer unit 105 having at least a temperature sensor 1051; a user interface unit 1012 for controlling and monitoring different parameters including temperature, water level, opening and closing of valves 108 and 109; and a power supply with power backup unit 104 for providing basic power for proper functioning of the system 100.

Abstract: The present invention relates to high sensitivity elastic deflection sensors, more particularly related to capacitively coupled FET based elastic deflection sensors. A sub-threshold elastic deflection FET sensor for sensing pressure/force comprises an elastic member forming a moving gate of the sensor, fixed dielectric on substrate of the FET, and a fluid dielectric between the elastic member and the fixed dielectric, wherein alteration in the height of the fluid dielectric (TSENS) due to pressure/force on the elastic member varies the sensor gate capacitance.

Abstract: The present invention relates to a Sub-threshold Field Effect Transistor (SF-FET). The invention integrates a MEMS mechanical transducer along with the sensing mechanism in a single device. Forced mass is capacitively coupled onto the FET structure. Dielectric SiO2 forms good interface with underlying silicon substrate. Air dielectric forms second dielectric wherein effective gate capacitance is the series combination of the second dielectric capacitance and fixed dielectric. Inertial displacements are sensed by observing change in drain current (ID) of the sensor due to change in gap height (TGap) of the second dielectric of the sensor caused by forced mass.

Abstract: The present invention relates to a Sub-threshold Field Effect Transistor (SF-FET). The invention integrates a MEMS mechanical transducer along with the sensing mechanism in a single device. Forced mass is capacitively coupled onto the FET structure. Dielectric SiO2 forms good interface with underlying silicon substrate. Air dielectric forms second dielectric wherein effective gate capacitance is the series combination of the second dielectric capacitance and fixed dielectric. Inertial displacements are sensed by observing change in drain current (ID) of the sensor due to change in gap height (T Gap) of the second dielectric of the sensor caused by forced mass.

Abstract: The present invention relates to high sensitivity chemical sensors, more particularly relates to high sensitivity chemical sensors which are capacitively coupled, FET based analyte sensors. A sub-threshold capacitively coupled Field Effect Transistor (CapFET) sensor for sensing an analyte comprises fixed dielectric placed on substrate of the CapFET and second dielectric sensitive to the analyte, placed between gate terminal of the CapFET and the fixed dielectric, wherein presence of the analyte alters either dielectric constant of the second dielectric or work function of the gate.

Abstract: The present invention relates to high sensitivity elastic deflection sensors, more particularly related to capacitively coupled FET based elastic deflection sensors. A sub-threshold elastic deflection FET sensor for sensing pressure/force comprises an elastic member forming a moving gate of the sensor, fixed dielectric on substrate of the FET, and a fluid dielectric between the elastic member and the fixed dielectric, wherein alteration in the height of the fluid dielectric (TSENS) due to pressure/force on the elastic member varies the sensor gate capacitance.