Abstract: A method for vacuum gap formation on a dielectric substrate uses area selective deposition (ASD), such as atomic layer deposition (ALD) or chemical vapor deposition (CVD), of a hardmask material on a substrate patterned with a self-assembled monolayer (SAM) and metal features. Due to the presence of the SAM, the hardmask material reaches, but does not touch the metal features leaving areas that will form gaps on the resultant hardmask when the SAM is removed from the substrate. Etching of the dielectric substrate forms trenches in the areas of the gaps. When a non-conformal coating is deposited on the dielectric substrate, vacuum gaps form in the trenches as the non-conformal coating enters into the trenches, but closes off at the surface of the substrate prior to the complete filling of the trench.

Abstract: A depolymerization reaction of a polyester input with an organocatalyst and an alcohol solvent produces (i) a recycled monomeric or oligomeric diester from the polyester, (ii) the organocatalyst for reuse, and (iii) the alcohol solvent, which may also be reused. The presence of volatile impurities, such as water, acetyl aldehyde, and organic solvents can interfere with the success of the depolymerization reaction. A pre-reaction distillation step removes volatile impurities from the polyester input resulting in an efficient depolymerization reaction with consistency among batches. The polyester input may be further treated with a water azeotrope to remove water from the polyester input prior to the pre-reaction distillation.

Abstract: A thermal interface material (TIM) that includes a thermally reworkable polysiloxane with thermally reversible cycloadduct functionalities on at least one polysiloxane chain is disclosed. A TIM that includes a polysiloxane blended with a crosslinking network having thermally reversible cycloadduct functionalities is disclosed as well. A method of providing a TIM that includes a thermally reversible polymer network, a semiconductor package containing the TIM, and a computing device including the semiconductor package are also disclosed. The thermally reworkable polymer network of the provided TIM includes at least one polysiloxane chain and thermally reversible cycloadduct functionalities.

Abstract: A thermal interface material (TIM) that includes a hydroxy-terminated polysiloxane blended with a catalyst generator is disclosed. When the catalyst generator is activated by a thermal stimulus, it catalyzes cleavage of silicon-oxygen bonds in the hydroxy-terminated polysiloxane. A semiconductor package and a computing device containing the TIM are also disclosed. Additionally, a method of providing a TIM, as well as a semiconductor package containing the TIM are disclosed. Providing the TIM includes blending a hydroxy-terminated polysiloxane with a catalyst generator that cleaves silicon-oxygen bonds when activated by a thermal stimulus.

Abstract: A semiconductor device including a magnetic tunnel junction (MTJ) stack, a dielectric encapsulation layer surrounding vertical side surfaces of the MTJ stack, a metal encapsulation layer surrounding an upper horizontal surface and a portion of a vertical side surface of the dielectric encapsulation layer, and a dielectric surrounding a remaining portion of the vertical side surface of the dielectric encapsulation layer. A method including method includes forming a magnetic tunnel junction (MTJ) stack, forming a dielectric encapsulation layer surrounding vertical side surfaces of a top electrode, a free layer, a tunneling barrier, a reference layer and a bottom electrode of the MTJ stack, and forming a metal encapsulation layer surrounding an upper horizontal surface and a portion of a vertical side surface of the dielectric encapsulation layer.

Abstract: A surfactant or photoacid generator (PAG) that forms a self-assembled monolayer is deposited on a substrate surface. Application of electron beam (e-beam) and/or extreme ultraviolet (EUV) radiation to the substrate surface forms a negative or positive tone pattern on the monolayer. A hydroxamic acid may be used to form a negative tone self-assembled monolayer and a silane or PAG may be used to form a positive tone self-assembled monolayer. Area selective deposition of an EUV absorbing material on the negative or positive tone patterned monolayer forms a negative or positive tone EUV absorbing mask, respectively.

Abstract: A depolymerization reaction of a polyester input with an organocatalyst and an alcohol solvent produces (i) a recycled monomeric or oligomeric diester from the polyester, (ii) the organocatalyst for reuse, and (iii) the alcohol solvent, which may also be reused. The presence of volatile impurities, such as water, acetyl aldehyde, and organic solvents can interfere with the success of the depolymerization reaction. A pre-reaction distillation step removes volatile impurities from the polyester input resulting in an efficient depolymerization reaction with consistency among batches. The polyester input may be further treated with a water azeotrope to remove water from the polyester input prior to the pre-reaction distillation.

Abstract: A stimulus-responsive micellar carrier, methods that may be associated with making a stimulus-responsive micellar carrier, and methods that may be associated with using a stimulus-responsive micellar carrier are disclosed. The stimulus-responsive micellar carrier comprises a cargo molecule, and a linear block copolymer having a hydrophilic block connected to a hydrophobic block by a stimulus-responsive junction moiety. The micellar carrier can be supplied to a patient body for therapeutic purposes, such as the treatment of cancerous tissue. A method of preparing or obtaining a stimulus-responsive micellar carrier may include preparing a polyethylene glycol material having an acetal end group and then preparing a block copolymer by forming a reaction mixture including the polyethylene glycol material, a cyclic carbonate monomer, and a base.

Abstract: Embodiments are provided for fabrication of superconducting devices using area-selective deposition of a metal nitride. In some embodiments, a method can include providing a thermally treated carbon layer, and selectively depositing a metal nitride using the thermally treated carbon layer for formation of a superconducting device.

Abstract: A depolymerization reaction of a polyester input with an organocatalyst and an alcohol solvent produces (i) a recycled monomeric or oligomeric diester from the polyester, (ii) the organocatalyst for reuse, and (iii) the alcohol solvent, which may also be reused. The presence of volatile impurities, such as water, acetyl aldehyde, and organic solvents can interfere with the success of the depolymerization reaction. A pre-reaction distillation step removes volatile impurities from the polyester input resulting in an efficient depolymerization reaction with consistency among batches. The polyester input may be further treated with a water azeotrope to remove water from the polyester input prior to the pre-reaction distillation.

Abstract: A composition, process, and device are disclosed. The composition includes a polymer formed by reacting an epoxy compound with an amine curing agent. The epoxy compound comprises a Diels-Alder dimer and an ester moiety. The process includes providing a polymer formed by reacting the epoxy compound with the amine curing agent. The device includes a material that includes the polymer.

Abstract: An exemplary semiconductor structure includes a semiconductor substrate; a plurality of metal lines on top of the semiconductor substrate, each line having a line width 5 nanometers or less: a plurality of dielectric features adjacent to the metal lines; and a plurality of metal vias on top of the metal lines. Out of a random sample of 1000 vias at least 950 vias are fully-aligned to corresponding metal lines.

Abstract: In an embodiment is provided a polymer that includes a plurality of N-J-N or N—C—S repeating units, wherein each J is independently a carbon atom, an alkyl group, or an aryl group; a plurality of hydrophilic groups bonded with the repeating units; and a plurality of hydrophobic groups bonded with the hydrophilic groups and the repeating units. In another embodiment is provided hydrogels of such polymers. The hydrogels may be used as delivery vehicles for various payloads. In another embodiment is provided methods of forming such polymers.

Abstract: A method of selectively forming a cover layer is provided. The method includes exposing a surface of a metal feature and a surface of a dielectric layer to a plasma treatment, and exposing the surface of a metal feature and a surface of a dielectric layer to an inhibitor species to form an inhibitor layer selectively on the surface of the metal feature. The method further includes polymerizing the inhibitor layer to form an inhibiting film, and forming the cover layer on the surface of the dielectric layer.

Abstract: A method of forming a fully-aligned via (FAV) structure is provided. The method includes arranging conductive material adjacent to a dielectric pad and chemically deactivating a surface of the conductive material by forming a dopant-free surface-aligned monolayer (SAM) thereon. Dielectric material is deposited onto the dielectric pad aside the dopant-free SAM and the dopant-free SAM is removed from the surface of the conductive material.

Abstract: Embodiments of the invention provide self-assembled monolayers (SAM) formulations and cleaning to promote quick depositions. A hydrogen-based plasma clean is performed on a structure, the structure including a metal layer and a dielectric layer. A self-assembled monolayers (SAM) solution is dispensed on the structure, the SAM solution including SAMs and a solvent, the SAMs being configured to assemble on the metal layer. The structure is rinsed with a rinse solution including the solvent.

Abstract: Self-aligned semiconductor device structures and techniques for fabrication thereof are provided. In one aspect, a self-aligned semiconductor device structure includes: at least one first conductive element embedded in a first dielectric; a second dielectric disposed selectively on the first dielectric relative to the at least one first conductive element; and at least one second conductive element present in the second dielectric that is fully aligned with the at least one first conductive element. A liner can be disposed on the second dielectric and which separates the second dielectric from the at least one second conductive element. A method of forming a self-aligned semiconductor device structure is also provided.

Abstract: A method is presented for selective deposition on metals using porous low-k materials. The method includes forming alternating layers of a porous dielectric material and a first conductive material, forming a surface aligned monolayer (SAM) over the first conductive material, depositing hydroxamic acid (HA) material over the porous dielectric material, growing an oxide material over the first conductive material, removing the SAM, depositing a dielectric layer adjacent the oxide material, and replacing the oxide material with a second conductive material defining a bottom electrode.

Abstract: A process of forming a treated clay composition, a process of decaffeination, and a treated clay composition are shown. The process of forming the treated clay composition includes providing a first solution of caffeine molecules and non-caffeine molecules, extracting the caffeine molecules to form a pretreatment solution, and bringing a clay composition into contact with the pretreatment solution to form the treated clay composition, on which at least one of the non-caffeine molecules is adsorbed. The process of decaffeination includes providing a solution of caffeine and non-caffeine molecules, and bringing the solution into contact with a treated clay composition. The treated clay composition includes organic molecules adsorbed on mineral layers of a clay. The organic molecules are non-caffeine molecules from a pretreatment solution.

Abstract: Antibacterial coatings and methods of making the antibacterial coatings are described herein. A first branched polyethylenimine (BPEI) layer is formed and a first glyoxal layer is formed on a surface of the BPEI layer. The first BPEI layer and the first glyoxal layer are cured to form a crosslinked BPEI coating. The first BPEI layer can be modified with superhydrophobic moieties, superhydrophilic moieties, or negatively charged moieties to increase the antifouling characteristics of the coating. The first BPEI layer can be modified with contact-killing bactericidal moieties to increase the bactericidal characteristics of the coating.