Patents by Inventor Ruediger Paschotta

Ruediger Paschotta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6834064
    Abstract: A pulsed solid-state thin-disk laser comprises an optical resonator and a solid-state laser gain medium placed inside the optical resonator. The laser gain medium is in the shape of a thin plate or layer with two end faces, the extension of the end faces being greater than a thickness of said plate or layer measured in a direction perpendicular to one of the end faces. One of the end faces comprises a cooling surface, via which the laser gain medium is cooled. A pumping source is provided for exciting the laser gain medium to emit electromagnetic radiation. The thin-disk laser further comprises means for passive mode locking placed inside the optical resonator. The mode-locking means are preferably a semiconductor saturable absorber mirror (SESAM). The laser offers a high average power, a good beam quality, short pulses and a high efficiency. Problems such as thermal lensing, Q-switching instabilities and damages of the mode-locking means are avoided. Moreover, the output power of the laser is scalable, i.e.
    Type: Grant
    Filed: March 17, 2000
    Date of Patent: December 21, 2004
    Assignee: Time-Bandwidth Products AG
    Inventors: Ruediger Paschotta, Juerg Aus Der Au, Gabriel J Spuehler, Ursula Keller
  • Patent number: 6735234
    Abstract: A passively mode-locked optically pumped semiconductor vertical-external-cavity surface-emitting laser (OPS-EXSEL) is disclosed. The laser is mode locked by a semiconductor saturable absorber mirror (SESAM) which forms part of an external cavity. Both the beam-quality limitations of edge-emitting lasers, and the power restrictions of electrically pumped surface-emitting lasers are overcome. The laser uses a semiconductor wafer in which a stack of quantum wells is grown adjacent to a single Bragg-mirror structure. Light from one or more multi-mode high-power diode lasers is focused onto the face of the wafer and pumps the wells by absorption in the barrier regions. The area of the laser mode on the active mirror can be about 104 times larger than the mode area on the facet of an edge-emitting laser, offering scope for the generation of high average power and large pulse energy. At the same time the external cavity enforces fundamental mode operation in a circular, near-diffraction-limited beam.
    Type: Grant
    Filed: February 11, 2000
    Date of Patent: May 11, 2004
    Assignee: Giga Tera AG
    Inventors: Ruediger Paschotta, Reto Haering, Ursula Keller