Patents by Inventor Ruei-Cheng Shiu

Ruei-Cheng Shiu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METALLIZATION LAYER AND FABRICATION METHOD
    Publication number: 20240282707
    Abstract: A second metal structure such as a metal plug is formed over a first metal structure, such as a metal line, by causing metal material from the first metal structure to migrate into an opening in a dielectric layer over the first metal structure. The metal material, which may be copper, is of a type that undergoes a reduction in density as it oxidizes. Migration is induced using gases that alternately oxidize and reduce the metal material. Over many cycles, the metal material migrates into the opening. In some embodiments, the migrated metal material partially fills the opening. In some embodiments, the migrated metal material completely fills the opening.
    Type: Application
    Filed: April 30, 2024
    Publication date: August 22, 2024
    Inventors: I-Che Lee, Huai-Ying Huang, Ruei-Cheng Shiu
  • Metallization layer and fabrication method
    Patent number: 12002755
    Abstract: A second metal structure such as a metal plug is formed over a first metal structure, such as a metal line, by causing metal material from the first metal structure to migrate into an opening in a dielectric layer over the first metal structure. The metal material, which may be copper, is of a type that undergoes a reduction in density as it oxidizes. Migration is induced using gases that alternately oxidize and reduce the metal material. Over many cycles, the metal material migrates into the opening. In some embodiments, the migrated metal material partially fills the opening. In some embodiments, the migrated metal material completely fills the opening.
    Type: Grant
    Filed: May 5, 2021
    Date of Patent: June 4, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: I-Che Lee, Huai-Ying Huang, Ruei-Cheng Shiu
  • METALLIZATION LAYER AND FABRICATION METHOD
    Publication number: 20220238438
    Abstract: A second metal structure such as a metal plug is formed over a first metal structure, such as a metal line, by causing metal material from the first metal structure to migrate into an opening in a dielectric layer over the first metal structure. The metal material, which may be copper, is of a type that undergoes a reduction in density as it oxidizes. Migration is induced using gases that alternately oxidize and reduce the metal material. Over many cycles, the metal material migrates into the opening. In some embodiments, the migrated metal material partially fills the opening. In some embodiments, the migrated metal material completely fills the opening.
    Type: Application
    Filed: May 5, 2021
    Publication date: July 28, 2022
    Inventors: I-Che Lee, Huai-Ying Huang, Ruei-Cheng Shiu