Abstract: A sensing device including a substrate, a switching element, a sensing element and a common electrode is provided. The switching element is disposed on the substrate and includes a source electrode. The sensing element is disposed at one side of the switching element and includes a lower electrode, a photoelectric conversion layer and an upper electrode. The lower electrode is electrically connected to the source electrode. The photoelectric conversion layer is disposed on the lower electrode. The upper electrode is disposed on the photoelectric conversion layer. The common electrode is electrically connected to the upper electrode and belongs to the same film layer as the source electrode. A fabricating method of a sensing device is also provided.

Abstract: A photosensitive device substrate including a substrate, an active device, and a photosensitive device is provided. The active device and the photosensitive device are disposed on the substrate. The active device has a semiconductor pattern and a gate electrode. The semiconductor pattern is disposed between the substrate and the gate electrode. The photosensitive device is electrically connected to the active device. The photosensitive device has a photoelectric conversion layer and a first electrode and second electrode disposed on two opposite sides of the photoelectric conversion layer. The first electrode is located between the photoelectric conversion layer and the semiconductor pattern, and the material of the first electrode includes a metal oxide.

Abstract: An X-ray sensing device includes a photosensitive element, lead-containing glass, and an X-ray conversion structure. The photosensitive element is configured to sense light having a first wavelength. The lead-containing glass overlaps the photosensitive element. The X-ray conversion structure is disposed on the lead-containing glass. The lead-containing glass is located between the photosensitive element and the X-ray conversion structure. The X-ray conversion structure is configured to at least partially convert X-rays into light having the first wavelength.

Abstract: An X-ray sensing device includes a photosensitive element, lead-containing glass, and an X-ray conversion structure. The photosensitive element is configured to sense light having a first wavelength. The lead-containing glass overlaps the photosensitive element. The X-ray conversion structure is disposed on the lead-containing glass. The lead-containing glass is located between the photosensitive element and the X-ray conversion structure. The X-ray conversion structure is configured to at least partially convert X-rays into light having the first wavelength.

Abstract: A real/fake fingerprint recognition device includes a light source, a detector, and a processor. The light source is configured to provide a first color light and a second color light to a fingerprint. The detector is configured to receive a first reflect light corresponding to the first color light, and receive a second reflect light corresponding to the second color light. The processor is configured to establish a first image and a second image according to the first reflect light and the second reflect light respectively, and determine whether the fingerprint is a real fingerprint according to the first image and the second image.

Abstract: A photosensitive element and a manufacturing method thereof are provided. The manufacturing method of the photosensitive element includes successively depositing a second conductive layer, a photosensitive material layer, and a first top electrode material layer on a substrate; forming a first patterned photoresist layer on the first top electrode material layer; patterning the first top electrode material layer by using the first patterned photoresist layer as a mask to form a first top electrode; removing the first patterned photoresist layer; patterning the photosensitive material layer by using the first top electrode as a mask to form a photosensitive layer; forming an insulation layer having an opening on the first top electrode; and forming a second top electrode on the insulation layer, and the second top electrode is electrically connected to the first top electrode via the opening.

Abstract: A photosensor includes a substrate, a sensing device, and a light shielding layer. The sensing device is disposed on the substrate and includes a first electrode, a photo-sensing layer, and a second electrode. The first electrode is disposed on the substrate. The photo-sensing layer is disposed on the first electrode. The second electrode is disposed on the photo-sensing layer, and the photo-sensing layer is interposed between the first electrode and the second electrode. The light shielding layer is disposed on the second electrode. Here, the photo-sensing layer has a shielded portion shielded by the light shielding layer and a photo-receiving portion not shielded by the light shielding layer, and an area of the shielded portion is 55% to 99% of an entire area of the photo-sensing layer.

Abstract: A real/fake fingerprint recognition device includes a light source, a detector, and a processor. The light source is configured to provide a first color light and a second color light to a fingerprint. The detector is configured to receive a first reflect light corresponding to the first color light, and receive a second reflect light corresponding to the second color light. The processor is configured to establish a first image and a second image according to the first reflect light and the second reflect light respectively, and determine whether the fingerprint is a real fingerprint according to the first image and the second image.

Abstract: A photosensor includes a substrate, a sensing device, and a light shielding layer. The sensing device is disposed on the substrate and includes a first electrode, a photo-sensing layer, and a second electrode. The first electrode is disposed on the substrate. The photo-sensing layer is disposed on the first electrode. The second electrode is disposed on the photo-sensing layer, and the photo-sensing layer is interposed between the first electrode and the second electrode. The light shielding layer is disposed on the second electrode. Here, the photo-sensing layer has a shielded portion shielded by the light shielding layer and a photo-receiving portion not shielded by the light shielding layer, and an area of the shielded portion is 55% to 99% of an entire area of the photo-sensing layer.

Abstract: A photosensitive element and a manufacturing method thereof are provided. The manufacturing method of the photosensitive element includes successively depositing a second conductive layer, a photosensitive material layer, and a first top electrode material layer on a substrate; forming a first patterned photoresist layer on the first top electrode material layer; patterning the first top electrode material layer by using the first patterned photoresist layer as a mask to form a first top electrode; removing the first patterned photoresist layer; patterning the photosensitive material layer by using the first top electrode as a mask to form a photosensitive layer; forming an insulation layer having an opening on the first top electrode; and forming a second top electrode on the insulation layer, and the second top electrode is electrically connected to the first top electrode via the opening.

Abstract: A display panel including first and second pixel structures and a light shielding pattern layer is provided. The first pixel structure includes a first pixel electrode including first pixel electrode bars, wherein a first maximum spacing is formed between any two adjacent first pixel electrode bars of the first pixel structure. The second pixel structure includes a second pixel electrode including second pixel electrode bars, wherein a second maximum spacing which is larger than the first maximum spacing is formed between two adjacent second pixel electrode bars of the second pixel structure. The light shielding pattern layer has first and second light shielding portions. The area of the second light shielding portion is larger than the area of the first light shielding portion. The first pixel electrode is close to the second light shielding portion and the second pixel electrode is away from the second light shielding portion.

Abstract: A display panel including first and second pixel structures and a light shielding pattern layer is provided. The first pixel structure includes a first pixel electrode including first pixel electrode bars, wherein a first maximum spacing is formed between any two adjacent first pixel electrode bars of the first pixel structure. The second pixel structure includes a second pixel electrode including second pixel electrode bars, wherein a second maximum spacing which is larger than the first maximum spacing is formed between two adjacent second pixel electrode bars of the second pixel structure. The light shielding pattern layer has first and second light shielding portions. The area of the second light shielding portion is larger than the area of the first light shielding portion. The first pixel electrode is close to the second light shielding portion and the second pixel electrode is away from the second light shielding portion.

Abstract: A method of stabilizing parasitic capacitance in an LCD device. Pluralities of transversely expanding gate lines are formed on a substrate. A first insulating layer is formed on the substrate and the gate lines. By performing a photolithography procedure using a photomask, a plurality of longitudinally expanding data lines and a plurality of metallic light shield layers are formed on part of the first insulating layer, wherein the metallic light shield layers are located on both sides of the data line. A second insulating layer is formed on the metallic light shield layers and the data lines. Transparent conductive layers are formed on part of the second insulating layer. Moreover, conductive plugs penetrating the second insulating layer are formed to electrically connect the metallic light shield layers and the transparent conductive layers.