Abstract: A power supply includes a power source having at least one power source output, and a plurality of drivers connected to the at least one power source output. At least one of the plurality of drivers includes a bridge network having a first switch, a second switch and a bridge network output. The first switch is connected between the at least one power source output and the bridge network output. The second switch is connected between the bridge network output and a ground. The bridge network further includes at least one control input connected to the second switch to direct electrical current from the at least one power source output either substantially through the bridge network output or through the second switch to ground.

Abstract: A solid-state vacuum device (SSVD) and method for making the same. In one embodiment, the SSVD forms a triode device comprising a substrate having a cavity formed therein. The SSVD further comprises a cathode positioned near the opening of the cavity, wherein the cathode spans over the cavity in the form of a bridge that creates an air gap between the cathode and substrate. In addition, the SSVD further comprises an anode and a grid that is positioned between the anode and cathode. Upon applying heat to the cathode, electrons are released from the cathode, passed through the grid, and received by the anode. In response to receiving the electrons, the anode produces a current. The current received by the anode is controlled by a voltage applied to the grid. Other embodiments of the present invention provide diode, tetrode, pentode, and other higher order device configurations.

Abstract: The present invention includes processes and packaging for high voltage integrated circuits (ICs), high voltage electronic devices and high voltage electronic circuits which operate over a wide range of voltages, e.g., from tens of volts to tens of thousands of volts. The inventive processes and packaging are particularly suitable for integrating low or lower voltage circuits or transistors to form high voltage ICs, high voltage electronic devices and high voltage electronic circuits. The inventive processes and packaging are also particularly suitable for isolating high voltage electronics to achieve high breakdown voltages and for supporting high voltage operation. The inventive processes may be used with any suitable semiconductor materials using conventional semiconductor fabrication and related facilities.

Abstract: A device for generating blue or green laser light, comprising an infrared high power semiconductor laser or an infrared high power semiconductor laser bar or array, a diffractive optical device, and an optical device utilizing a non-linear crystal to generate the blue or green laser light.

Abstract: An improved Klystron device is disclosed which has opposed electrostatic (ES) magnetic field generating members which are uniformly spaced along a longitudinal axis to form an electron beam chamber. The ES magnetic field generating members produce a magnetic flux which confines an electron beam passing through the chamber when an alternating current (AC) is imposed upon the magnetic field generating members. An additional improvement includes a chamber formed from a single sheet of electron conductive metal having a ladder-like structure symmetrical about a longitudinal hinge which permits the structure to be folded about the hinge to form a suitable electron beam chamber.

Abstract: A solid-state vacuum device (SSVD) and method for making the same. In one embodiment, the SSVD forms a triode device comprising a substrate having a cavity formed therein. The SSVD further comprises cathode positioned near the opening of the cavity, wherein the cathode spans over the cavity in the form of a bridge that creates an air gap between the cathode and substrate. In addition, the SSVD further comprises an anode and a grid that is positioned between the anode and cathode. Upon applying heat to the cathode, electrons are released from the cathode, passed through the grid, and received by the anode. In response to receiving the electrons, the anode produces a current. The current received by the anode is controlled by a voltage applied to the grid. Other embodiments of the present invention provide diode, tetrode, pentode, and other higher order device configurations.

Abstract: Embodiments of the present invention include helical, ring bar and tunnel ladder slow wave structures (SWSs). Embodiments of methods of micro-fabricating such SWSs are also disclosed. Embodiments of high frequency electromagnetic devices including such SWSs are also disclosed. Exemplary high frequency electromagnetic devices may include a traveling wave tube, a traveling wave tube amplifier, a back wave oscillator, as part of a linear accelerator, a microwave power module, a klystron or a millimeter-wave power module.

Abstract: Vacuum compatible high frequency electromagnetic and millimeter wave source components, devices and methods of micro-fabricating such components and devices are disclosed. Embodiments of the methods may include using a UV-curable photoresist, such as SU-8 to form structures having height up to and exceeding 1 mm. High frequency electromagnetic wave sources including the inventive high frequency electromagnetic wave source components are also disclosed.

Abstract: A solid-state vacuum device (SSVD) and method for making the same. In one embodiment, the SSVD forms a triode device comprising a substrate having a cavity formed therein. The SSVD further comprises cathode positioned near the opening of the cavity, wherein the cathode spans over the cavity in the form of a bridge that creates an air gap between the cathode and substrate. In addition, the SSVD further comprises an anode and a grid that is positioned between the anode and cathode. Upon applying heat to the cathode, electrons are released from the cathode, passed through the grid, and received by the anode. In response to receiving the electrons, the anode produces a current. The current received by the anode is controlled by a voltage applied to the grid. Other embodiments of the present invention provide diode, tetrode, pentode, and other higher order device configurations.

Abstract: An improved Klystron device is disclosed which has opposed electrostatic (ES) magnetic field generating members which are uniformly spaced along a longitudinal axis to form an electron beam chamber. The ES magnetic field generating members produce a magnetic flux which confines an electron beam passing through the chamber when an alternating current (AC) is imposed upon the magnetic field generating members. An additional improvement includes a chamber formed from a single sheet of electron conductive metal having a ladder-like structure symmetrical about a longitudinal hinge which permits the structure to be folded about the hinge to form a suitable electron beam chamber.

Abstract: A device for generating blue or green laser light by the use of a device comprising an infrared high power semiconductor laser or an infrared high power semiconductor laser bar or array, a diffractive optical device, and an optical device utilizing a non-linear crystal to generate the blue or green laser light. In one embodiment, the diffractive optical device comprises a volume holographic transmission grating and the optical device comprises a ring resonator. In another embodiment, the diffractive optical device comprises a reflective diffraction grating feedback mechanism and the optical device comprises a ring resonator. In another embodiment, the optical device comprises a parabolic or non-planar feedback mechanism and a ring resonator. In another embodiment, the diffractive optical feedback device, which can be in the form of digital/binary optics, is attached to the semiconductor laser source.

Abstract: A method of making micro-optic elements. In one embodiment, photo-resist elements each having predetermined dimensions are transferred onto a substrate. The photo-resist elements are exposed to a reflow process to shape the top surface of the elements into a curved surface. The method also involves a reactive ion etching process having controlled parameters such as a photo-resist depth and the selectivity between the substrate and photo-resist. A predetermined photo-resist depth and selectivity form a micro-optic element having a predetermined shape, preferably an elliptical or parabolic shape. In another aspect of the present invention, a micro-optic element is used to construct a micro-mirror for eliminating filamentation and promoting single mode operation of high-power broad area semiconductor lasers. The lenses and micro-mirrors produced by methods disclosed herein are configured to collimate the output of high-power lasers and promote a Gaussian intensity profile laser beam from a broad area laser beam.

Abstract: A vertical transformer that comprises a primary and a secondary winding, wherein one winding is positioned on a first plane, and the other winding is positioned on a second plane. The primary and secondary windings are separated by a dielectric substrate. In one embodiment, the primary and secondary windings are configured to use the same ground reference, and terminals in the center of each winding are connected to the ground reference by a via hole to form an in-phase transformer. In a second embodiment, a center terminal of one winding and an outbound terminal of the other winding are connected to the ground reference to form an opposite-phase transformer. In the second embodiment, a dielectric substrate is positioned between one of the windings and a ground plane.

Abstract: A mode controlling device for capturing a highly divergent, multi-mode laser beam received from a high-power broad area laser source and producing a narrow, single-mode laser beam. In one embodiment, the mode controlling device comprises a diffractive device having a nonplanar profile positioned to receive the multi-mode laser beam. The diffractive device comprises a plurality of grooves for receiving the multi-mode laser beam and diffracting light to a reflective medium, thereby creating feedback for producing a narrow, single-mode laser beam with a non-uniform intensity profile. The reflective medium may be positioned at the surface of the diffractive device; alternatively, the reflective medium may be positioned at a predetermined distance from the diffractive device.

Abstract: A solid-state vacuum device (SSVD) and method for making the same. In one embodiment, the SSVD forms a triode device comprising a substrate having a cavity formed therein. The SSVD further comprises cathode positioned near the opening of the cavity, wherein the cathode spans over the cavity in the form of a bridge that creates an air gap between the cathode and substrate. In addition, the SSVD further comprises an anode and a grid that is positioned between the anode and cathode. Upon applying heat to the cathode, electrons are released from the cathode, passed through the grid, and received by the anode. In response to receiving the electrons, the anode produces a current. The current received by the anode is controlled by a voltage applied to the grid. Other embodiments of the present invention provide diode, tetrode, pentode, and other higher order device configurations.

Abstract: A method and apparatus for vaporizing and cracking chemical elements for use in a deposition process. The apparatus includes a vaporization cell integrally connected with a thermal cracker cell. The vaporization cell has an inlet section in communication with a valve section defining a heating chamber capable of holding a liquid or solid chemical material to be vaporized. A heat source is positioned in the heating chamber and is capable of providing sufficient thermal energy to evaporate or sublimate the chemical material. The thermal cracker cell is communicatively connected to an outlet of the vaporization cell, and includes an elongated tapered tube with a heating element associated therewith. The heating element is capable of providing sufficient thermal energy to dissociate molecular clusters of vaporized chemical material. This provides monomeric or dimeric chemical elements for use in a deposition process such as during semiconductor device fabrication.

Abstract: A device for generating blue or green laser light by the use of a device comprising an infrared high power semiconductor laser or an infrared high power semiconductor laser bar or array, a diffractive optical device, and an optical device utilizing a non-linear crystal to generate the blue or green laser light. In one embodiment, the diffractive optical device comprises a volume holographic transmission grating and the optical device comprises a ring resonator. In another embodiment, the diffractive optical device comprises a reflective diffraction grating feedback mechanism and the optical device comprises a ring resonator. In another embodiment, the optical device comprises a parabolic or non-planar feedback mechanism and a ring resonator. In another embodiment, the diffractive optical feedback device, which can be in the form of digital/binary optics, is attached to the semiconductor laser source.

Abstract: A vertical transformer that comprises a primary and a secondary winding, wherein one winding is positioned on a first plane, and the other winding is positioned on a second plane. The primary and secondary windings are separated by a dielectric substrate. In one embodiment, the primary and secondary windings are configured to use the same ground reference, and terminals in the center of each winding are connected to the ground reference by a via hole to form an in-phase transformer. In a second embodiment, a center terminal of one winding and an outbound terminal of the other winding are connected to the ground reference to form an opposite-phase transformer. In the second embodiment, a dielectric substrate is positioned between one of the windings and a ground plane.

Abstract: A method and apparatus for vaporizing and cracking chemical elements for use in a deposition process. The apparatus includes a vaporization cell integrally connected with a thermal cracker cell. The vaporization cell has an inlet section in communication with a valve section defining a heating chamber capable of holding a liquid or solid chemical material to be vaporized. A heat source is positioned in the heating chamber and is capable of providing sufficient thermal energy to evaporate or sublimate the chemical material. The thermal cracker cell is communicatively connected to an outlet of the vaporization cell, and includes an elongated tapered tube with a heating element associated therewith. The heating element is capable of providing sufficient thermal energy to dissociate molecular clusters of vaporized chemical material. This provides monomeric or dimeric chemical elements for use in a deposition process such as during semiconductor device fabrication.

Abstract: A mode controlling device for capturing a highly divergent, multi-mode laser beam received from a high-power broad area laser source and producing a narrow, single-mode laser beam. In one embodiment, the mode controlling device comprises a diffractive device having a nonplanar profile positioned to receive the multi-mode laser beam. The diffractive device comprises a plurality of grooves for receiving the multi-mode laser beam and diffracting light to a reflective medium, thereby creating feedback for producing a narrow, single-mode laser beam with a non-uniform intensity profile. The reflective medium may be positioned at the surface of the diffractive device; alternatively, the reflective medium may be positioned at a predetermined distance from the diffractive device.