Patents by Inventor Ruey-Shing Huang

Ruey-Shing Huang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6864176
    Abstract: A measurement method for the thinned thickness of the silicon wafer, wherein thickness inspection patterns are fabricated onto the silicon wafer substrate by anisotropic etching, and then the wafer is polished with a polisher; thus a wafer with desired thickness can be obtained after the polish is proceeded; the thickness of the upper wafer is determined by the said inspection patterns, then the wafer is sorted by thickness; thus it can be applied to the MEMS micromachined devices that in need of the wafer with such precise thickness.
    Type: Grant
    Filed: May 28, 2002
    Date of Patent: March 8, 2005
    Assignee: Asia Pacific Microsystems, Inc.
    Inventors: Hung-Dar Wang, Ruey-Shing Huang, Shih-Chin Gong, Chung-Yang Tseng
  • Publication number: 20040126797
    Abstract: The present invention relates to a micro-array system and the uses thereof. Particularly, the micro-array system is for a micro amount of biomolecules carrying on a bioreaction in a reaction solution, which comprises a substrate comprising a plurality of micro-wells for receiving the reaction solution; a plurality of micro-beads placing in the reaction solution for the biomolecules attached on surfaces thereon; and a vibrating module for vibrating the substrate, which makes the biomolecules attached on the micro-beads react evenly. Optionally, the micro-array system further comprises a temperature control module for controlling the temperature of the reaction solution. The bioreaction performed in the micro-array system according to the invention has the advantages of having a high sensitivity, being easily post-manipulated, being easily operated, having a high reliability and being reusable.
    Type: Application
    Filed: October 21, 2003
    Publication date: July 1, 2004
    Applicants: NATIONAL TSING-HUA UNIVERSITY, STANFORD UNIVERSITY
    Inventors: Chih-Ying Hsu, Tzong-Hsiung Hseu, Ruey-Shing Huang, David R. Cox, Chien-ming Wu, Jiann Heng Chen, Min-Lung Tsai, Ming-Tsong Lai, Yong-Li Pan, Tai-ching Fan
  • Publication number: 20030224610
    Abstract: A measurement method for the thinned thickness of the silicon wafer, wherein thickness inspection patterns are fabricated onto the silicon wafer substrate by anisotropic etching, and then the wafer is polished with a polisher; thus a wafer with desired thickness can be obtained after the polish is proceeded; the thickness of the upper wafer is determined by the said inspection patterns, then the wafer is sorted by thickness; thus it can be applied to the MEMS micromachined devices that in need of the wafer with such precise thickness.
    Type: Application
    Filed: May 28, 2002
    Publication date: December 4, 2003
    Applicant: ASIA PACIFIC MICROSYSTEMS, INC.
    Inventors: Hung-Dar Wang, Ruey-Shing Huang, Shih-Chin Gong, Chung-Yang Tseng
  • Publication number: 20030205948
    Abstract: A film bulk acoustic device having integrated trimmable device comprises a FBAR and a integrated tunable and trimmable device being integrated on a common substrate, at least a common electrode or piezoelectric layer. By trimming the integrated trimmable device or the FBAR and alter either the capacitance or inductance of the integrated trimmable device until the film bulk acoustic device having integrated trimmable device achieves the target resonance frequency. By taking advantage of the electrostatic force, the integrated tunable device is capable of providing tuning until the film bulk acoustic device having integrated tunable device achieves the target resonance frequency.
    Type: Application
    Filed: September 25, 2002
    Publication date: November 6, 2003
    Applicant: Asia Pacific Microsystems, Inc.
    Inventors: Chung-Hsien Lin, Shu-Hui Tsai, Chen-Hsun Du, Ruey-Shing Huang
  • Patent number: 6070851
    Abstract: A thermally buckling linear micro structure, in which by isolating technology a thermal oxidization isolation layer are generated on the two ends of a micro structure, or a material with larger thermal inflation coefficient is deposited, or the area of thermal conduction is reduced so that the two ends of a micro structure has a larger thermal stress and the membrane structure may be heated uniformly so to cause a thermally buckling deformation, therefore, the deformation of the membrane type micro structure is amplified linearly with the input power. This micro structure is formed as a membrane type by a membrane manufacturing technology.
    Type: Grant
    Filed: June 8, 1998
    Date of Patent: June 6, 2000
    Assignee: Industrial Technology Research Institute
    Inventors: Ming-Jye Tsai, Ruey-Shing Huang, Ching-Yi Wu