Abstract: Systems and method for perturbing a system include obtaining directed acyclic/cyclic graph candidates {GI, . . . , GN} for the system. Each Gi in {Gj, . . . GN} includes a causal relationship between a parent and child node. {GI, GN} demonstrate Markov equivalence. Observed data D is obtained for the nodes. For each respective Gi, the marginal probability of a parent node xi in Gi is clamped by D while computing a distribution of marginal probabilities for a child node yi, by Bayesian network or Dynamic Bayesian network belief propagation using an interaction function. The observed distribution for the child node yi, in D and the computed distribution of marginal probabilities for the child node yi are scored using a nonparametric function, and such scores inform the selection of a directed/cyclic graph from {GI, . . . , GN}. The system is perturbed using a perturbation that relies upon a causal relationship in the selected directed acyclic/cyclic graph.

Abstract: Techniques for the storage management involve, in response to detecting that a storage device is plugged into the storage system, determining, at a computing device of a storage system and based on attributes of the storage device, a target interface device matching the storage device from a plurality of types of interface devices in the storage system, the interface device managing the storage device having attributes matching one of the plurality of types; determining an association between the storage device and the target interface device; and generating, based on the association, information characterizing a state of the storage device in the computing device. In this way, it is possible to support at least two different types of disks in the existing storage system, improving the compatibility and scalability of the system.

Abstract: Systems and methods for predictive network modeling are disclosed. The systems and methods disclosed compute a top-down causal model and a bottom-up predictive model and utilize those models to determine the conditional independence among multiple variables and causality among equivalent variable structures. Before or during modeling, the data is passed through Markov Chain Monte Carlo sampling.

Abstract: The present disclosure relates to compositions and methods for use in the analysis of broad metabolic changes associated with neurological disorders. In particular, the present disclosure provides materials and methods relating to the use of metabolomics as a biochemical approach to identify sex-specific metabolic biomarkers of neurological disorders. Embodiments of the present disclosure include the use of sex-specific metabolic biomarkers to aid in the determination of whether a subject suffers from, or is at risk of developing, a neurological disorder, such as Alzheimer's disease (AD).

Abstract: The present invention provides a method of predicting the risk of reoccurrence of melanoma in a patient from whom melanoma tissue was previously removed which comprises the following: a. obtaining a RNA-containing sample of the previously removed melanoma tissue containing RNA from the patient; b. treating the sample to determine from the RNA contained in the sample the level of expression of a plurality of preselected genes; and c. comparing the level of expression of each gene of the plurality of pre-selected genes to a predetermined reference level of expression for each such gene; wherein a higher level of expression of the plurality of pre-selected genes in the sample as compared with the predetermined reference level of expression of such genes indicates that the patient has a reduced risk of reoccurrence of melanoma.

Abstract: An undulator comprises at least M permanent magnet periods arranged sequentially in a transmission direction of electron beams, each of the permanent magnet periods comprises four rows of permanent magnet structures, in which each row comprises N rows of permanent magnet groups, and each row of the permanent magnet groups comprises K permanent magnet units, wherein M, N and K are natural numbers greater than or equal to 1; the four rows of the permanent magnet structures are pairwise matched, then relatively disposed on both sides of the transmission direction of electron beams, and are capable of forming at least one composite magnetic fields by relative displacement, such that elliptically polarized light, circularly polarized light, or linearly polarized light with an arbitrary polarization angle of 0°˜360° is generated when electron beams pass through the composite magnetic fields, and such that velocity directions of electrons are deviated from an axis direction of the undulator.

Abstract: A semiconductor device includes a first film disposed over a semiconductor substrate, the first film comprising a first transition metal dichalcogenide; a second film disposed over the first film, the second film comprising a second transition metal dichalcogenide different from the first transition metal dichalcogenide; source and drain features formed over the second film; a first gate stack formed over the second film and interposed between the source and drain features; and a second gate stack formed over the semiconductor substrate opposite from the first gate stack such that the semiconductor substrate is between the first and second gate stacks.

Abstract: A method for manufacturing a semiconductor device comprising two-dimensional (2D) materials may include: epitaxially forming a first two-dimensional (2D) material layer over a substrate; calculating a mean thickness of the first 2D material layer; comparing the mean thickness of the first 2D material layer with a reference parameter; determining that the mean thickness of the first 2D material layer is not substantially equal to the reference parameter; and after the determining, epitaxially forming a second 2D material layer over the first 2D material layer.

Abstract: A semiconductor device includes a first film disposed over a semiconductor substrate, the first film comprising a first transition metal dichalcogenide; a second film disposed over the first film, the second film comprising a second transition metal dichalcogenide different from the first transition metal dichalcogenide; source and drain features formed over the second film; a first gate stack formed over the second film and interposed between the source and drain features; and a second gate stack formed over the semiconductor substrate opposite from the first gate stack such that the semiconductor substrate is between the first and second gate stacks.

Abstract: A method includes depositing a first transition metal film having a first transition metal on a substrate and performing a first sulfurization process to the first transition metal film, thereby forming a first transition metal sulfide film. The method further includes depositing a second transition metal film having a second transition metal on the first transition metal sulfide film and performing a second sulfurization process to the second transition metal film, thereby forming a second transition metal sulfide film. The first and the second transition metals are different. The method further includes forming a gate stack, and source and drain features over the second transition metal sulfide film. The gate stack is interposed between the source and drain features. The gate stack, source and drain features, the first transition metal sulfide film and the second transition metal sulfide film are configured to function as a hetero-structure transistor.

Abstract: A method includes depositing a first transition metal film having a first transition metal on a substrate and performing a first sulfurization process to the first transition metal film, thereby forming a first transition metal sulfide film. The method further includes depositing a second transition metal film having a second transition metal on the first transition metal sulfide film and performing a second sulfurization process to the second transition metal film, thereby forming a second transition metal sulfide film. The first and the second transition metals are different. The method further includes forming a gate stack, and source and drain features over the second transition metal sulfide film. The gate stack is interposed between the source and drain features. The gate stack, source and drain features, the first transition metal sulfide film and the second transition metal sulfide film are configured to function as a hetero-structure transistor.

Abstract: An undulator comprises at least M permanent magnet periods arranged sequentially in a transmission direction of electron beams, each of the permanent magnet periods comprises four rows of permanent magnet structures, in which each row comprises N rows of permanent magnet groups, and each row of the permanent magnet groups comprises K permanent magnet units, wherein M, N and K are natural numbers greater than or equal to 1; the four rows of the permanent magnet structures are pairwise matched, then relatively disposed on both sides of the transmission direction of electron beams, and are capable of forming at least one composite magnetic fields by relative displacement, such that elliptically polarized light, circularly polarized light, or linearly polarized light with an arbitrary polarization angle of 0°˜360° is generated when electron beams pass through the composite magnetic fields, and such that velocity directions of electrons are deviated from an axis direction of the undulator.

Abstract: The present disclosure provides a semiconductor device in accordance with some embodiments. The semiconductor device includes a first transition metal dichalcogenide film on a substrate; a second transition metal dichalcogenide film on the first transition metal dichalcogenide film; source and drain features formed over the second transition metal dichalcogenide film; and a first gate stack formed over the second transition metal dichalcogenide film and interposed between the source and drain feature.

Abstract: The present disclosure provides a semiconductor device in accordance with some embodiments. The semiconductor device includes a first transition metal dichalcogenide film on a substrate; a second transition metal dichalcogenide film on the first transition metal dichalcogenide film; source and drain features formed over the second transition metal dichalcogenide film; and a first gate stack formed over the second transition metal dichalcogenide film and interposed between the source and drain feature.

Abstract: A memory control circuit unit, a memory storage device and a data transmitting method are provided. The memory storage device coupled to a first host system includes a reset pin. The memory control circuit unit of the memory storage device includes a pulse pattern detector. The reset pin is coupled to a second host system and is configured to receive a first pulse signal from the second host system. The pulse pattern detector is coupled to the reset pin, and is configured to determine whether the first pulse signal is conformed to a first predetermined serial pulse pattern or not. If the first pulse signal is conformed to the first predetermined serial pulse pattern, the memory control circuit unit is configured to disable a reset function of the memory storage device.

Abstract: A memory control circuit unit, a memory storage device and a data transmitting method are provided. The memory storage device coupled to a first host system includes a reset pin. The memory control circuit unit of the memory storage device includes a pulse pattern detector. The reset pin is coupled to a second host system and is configured to receive a first pulse signal from the second host system. The pulse pattern detector is coupled to the reset pin, and is configured to determine whether the first pulse signal is conformed to a first predetermined serial pulse pattern or not. If the first pulse signal is conformed to the first predetermined serial pulse pattern, the memory control circuit unit is configured to disable a reset function of the memory storage device.

Abstract: A method for manufacturing a semiconductor device comprising two-dimensional (2D) materials may include: epitaxially forming a first two-dimensional (2D) material layer over a substrate; calculating a mean thickness of the first 2D material layer; comparing the mean thickness of the first 2D material layer with a reference parameter; determining that the mean thickness of the first 2D material layer is not substantially equal to the reference parameter; and after the determining, epitaxially forming a second 2D material layer over the first 2D material layer.

Abstract: Certain embodiments of the invention may include systems and methods for identifying drug targets using biological networks. According to an example embodiment of the invention, a method is provided for predicting the effects of drug targets on treating a disease. The method can include constructing a structure of a Bayesian network based at least in part on knowledge of drug inhibiting effects on a disease; associating a set of parameters with the constructed Bayesian network; determining values of a joint probability distribution of the Bayesian network via an automatic procedure; deriving a mean Bayesian network with one or more averaged parameters based at least in part on the joint probability values; and calculating a quantitative prediction based at least in part on the mean Bayesian network.

Abstract: Certain embodiments of the invention may include systems and methods for identifying drug targets using biological networks. According to an example embodiment of the invention, a method is provided for predicting the effects of drug targets on treating a disease. The method can include constructing a structure of a Bayesian network based at least in part on knowledge of drug inhibiting effects on a disease; associating a set of parameters with the constructed Bayesian network; determining values of a joint probability distribution of the Bayesian network via an automatic procedure; deriving a mean Bayesian network with one or more averaged parameters based at least in part on the joint probability values; and calculating a quantitative prediction based at least in part on the mean Bayesian network.

Abstract: The present invention provides a method of predicting the risk of reoccurrence of melanoma in a patient from whom melanoma tissue was previously removed which comprises the following: a. obtaining a RNA-containing sample of the previously removed melanoma tissue containing RNA from the patient; b. treating the sample to determine from the RNA contained in the sample the level of expression of a plurality of preselected genes; and c. comparing the level of expression of each gene of the plurality of pre-selected genes to a predetermined reference level of expression for each such gene; wherein a higher level of expression of the plurality of pre-selected genes in the sample as compared with the predetermined reference level of expression of such genes indicates that the patient has a reduced risk of reoccurrence of melanoma.