Abstract: A power supply circuit has a first node, a second node, a DC-DC converter that includes a switched capacitor, generates an output voltage based on an input voltage supplied from the first node, and outputs the output voltage from the second node, and a regulator that is connected in parallel to the DC-DC converter between the first node and the second node and controls an output current flowing to the second node based on a reference voltage lower than the input voltage.

Abstract: A power supply circuit has a first node, a second node, a DC-DC converter that includes a switched capacitor, generates an output voltage based on an input voltage supplied from the first node, and outputs the output voltage from the second node, and a regulator that is connected in parallel to the DC-DC converter between the first node and the second node and controls an output current flowing to the second node based on a reference voltage lower than the input voltage.

Abstract: A power supply circuit has a first node, a second node, a DC-DC converter that includes a switched capacitor, generates an output voltage based on an input voltage supplied from the first node, and outputs the output voltage from the second node, and a regulator that is connected in parallel to the DC-DC converter between the first node and the second node and controls an output current flowing to the second node based on a reference voltage lower than the input voltage.

Abstract: According to one embodiment, a sense amplifier circuit includes an amplifier having an input terminal connected to a sense node, and a first capacitor configured to be connected in a feedback path of the amplification transistor and to a bit line of a memory cell via the sense node, the first capacitor configured to supply a current to the memory cell and integrate the current when the memory cell is read.

Abstract: According to one embodiment, a semiconductor memory device includes a plurality of memory cells connected to a word line, a circuit configured to apply a voltage to the word line, a detection circuit configured to detect a first time difference from when a first signal of which a voltage is increased with a first slope is applied to the word line to when a current flows through the memory cells in response to applying the first signal, and a second time difference from when a second signal of which a voltage is increased with a second slope is applied to the word line to when a current flows through the memory cells in response to applying the second signal, the second slope being different from the first slope, and a determination circuit configured to determine a threshold voltage of the memory cells based on a difference between the first time difference and the second time difference.

Abstract: According to one embodiment, a semiconductor memory device includes a plurality of memory cells connected to a word line, a circuit configured to apply a voltage to the word line, a detection circuit configured to detect a first time difference from when a first signal of which a voltage is increased with a first slope is applied to the word line to when a current flows through the memory cells in response to applying the first signal, and a second time difference from when a second signal of which a voltage is increased with a second slope is applied to the word line to when a current flows through the memory cells in response to applying the second signal, the second slope being different from the first slope, and a determination circuit configured to determine a threshold voltage of the memory cells based on a difference between the first time difference and the second time difference.

Abstract: According to one embodiment, a sense amplifier circuit includes an amplifier having an input terminal connected to a sense node, and a first capacitor configured to be connected in a feedback path of the amplification transistor and to a bit line of a memory cell via the sense node, the first capacitor configured to supply a current to the memory cell and integrate the current when the memory cell is read.

Abstract: A semiconductor memory device includes a plurality of memory cells that include one or more pairs of reference cells that store reference data, and a circuit peripheral thereto. The memory cells are commonly connected to a word line and connected to a plurality of bit lines, respectively. The circuit is configured to apply a read voltage to the word line, cause sense nodes of bit lines connected to the reference memory cells of each pair to be electrically connected to each other, determine whether or not each of the plurality of reference memory cells is ON or OFF based on a voltage at a sense node of each of the plurality of bit lines, and update the read voltage based on the number of reference memory cells determined to be ON and the number thereof determined to be OFF.

Abstract: An amplifier of an embodiment includes: a plurality of input transistors of a plurality of differential pairs; a plurality of first resistance circuits mutually connecting respective sources of the input transistors corresponding to the differential pairs and mutually connecting the respective sources and reference potential points; a plurality of second resistance circuits being connected between the respective sources of the plurality of input transistors and the reference potential points, respectively; and a control circuit configured to generate a control signal controlling whether or not to electrically connect the plurality of first resistance circuits and the plurality of second resistance circuits to the respective sources of the input transistors.

Abstract: A receiving circuit includes first and second input sections through which signals are to be received, first and second signal lines connected to the first and second input sections, respectively, a first circuit connected to the first and second signal lines and including a termination circuit and a self-test circuit, first and second capacitive elements that are provided in the first and second signal lines and configured to allow alternating-current components of the received signals to pass therethrough and interrupt at least direct-current components of the received signals from passing through, a second circuit that is connected to the first and second signal lines and configured to boost a gain of the received signals in a certain frequency band that have passed through the first and second capacitive elements, and first and second output sections through which the received signals boosted by the second circuit are output.

Abstract: An amplifier of an embodiment includes: a plurality of input transistors of a plurality of differential pairs; a plurality of first resistance circuits mutually connecting respective sources of the input transistors corresponding to the differential pairs and mutually connecting the respective sources and reference potential points; a plurality of second resistance circuits being connected between the respective sources of the plurality of input transistors and the reference potential points, respectively; and a control circuit configured to generate a control signal controlling whether or not to electrically connect the plurality of first resistance circuits and the plurality of second resistance circuits to the respective sources of the input transistors.

Abstract: An amplifier of an embodiment includes: a plurality of input transistors of a plurality of differential pairs; a plurality of first resistance circuits mutually connecting respective sources of the input transistors corresponding to the differential pairs and mutually connecting the respective sources and reference potential points; a plurality of second resistance circuits being connected between the respective sources of the plurality of input transistors and the reference potential points, respectively; and a control circuit configured to generate a control signal controlling whether or not to electrically connect the plurality of first resistance circuits and the plurality of second resistance circuits to the respective sources of the input transistors.

Abstract: An amplifier of an embodiment includes: a plurality of input transistors of a plurality of differential pairs; a plurality of first resistance circuits mutually connecting respective sources of the input transistors corresponding to the differential pairs and mutually connecting the respective sources and reference potential points; a plurality of second resistance circuits being connected between the respective sources of the plurality of input transistors and the reference potential points, respectively; and a control circuit configured to generate a control signal controlling whether or not to electrically connect the plurality of first resistance circuits and the plurality of second resistance circuits to the respective sources of the input transistors.

Abstract: According to one embodiment, there is provided an active load circuit including a first transistor, a second transistor, a first resistor, a second resistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor, and a line. The third transistor is placed between the first transistor and the first reference node. The fourth transistor is placed between the second transistor and the first reference node. The seventh transistor is placed between the fifth transistor and the first reference node. The eighth transistor is placed between the sixth transistor and the first reference node. A line connecting a fifth node between the fifth transistor and the seventh transistor and a sixth node between the sixth transistor and the eighth transistor.

Abstract: According to one embodiment, there is provided an active load circuit including a first transistor, a second transistor, a first resistor, a second resistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor, an eighth transistor, and a line. The third transistor is placed between the first transistor and the first reference node. The fourth transistor is placed between the second transistor and the first reference node. The seventh transistor is placed between the fifth transistor and the first reference node. The eighth transistor is placed between the sixth transistor and the first reference node. a line connecting a fifth node between the fifth transistor and the seventh transistor and a sixth node between the sixth transistor and the eighth transistor.

Abstract: According to one embodiment, a switching unit switches between a first state in which the current source is connected to a first capacitance element and a ground electric potential is connected to a second capacitance element and a second state in which a current source is connected to the second capacitance element and the ground electric potential is connected to the first capacitance element. A comparison unit compares a voltage charged in the first capacitance element and a reference voltage with each other in the first state and compares a voltage charged in the second capacitance element and the reference voltage with each other in the second state. A generation unit generates a periodical pulse based on a comparison result acquired by the comparison unit. The switching unit alternately switches between the first state and the second state based on the comparison result acquired by the comparison unit.

Abstract: A time constant automatic adjusting circuit comprises: a filter circuit varying a phase of an clock signal to be input so as to output the clock signal; a phase comparison circuit comparing a phase of an output signal of the filter circuit with the phase of the clock signal, and outputting a predetermined voltage when the phase of the output signal and the phase of the clock signal are the same; at least three comparators comparing the output voltage with a plurality of different voltages; an up-down counter counting a number of output bits of either one of the at least three different voltages in accordance with an output result of the comparators; and a control circuit varying the time constant of the filter circuit in accordance with the number of output bits counted by the up-down counter.

Abstract: A receiver includes a memory for storing DC offset amounts generated by an analog circuit; an amplifier; a DC offset amount generator for generating a first offset value and a second offset value to be removed from the received signal amplified at the amplifier; a first DC offset component-removing unit for removing the first DC offset value from the received signal before the amplifier; a second DC offset component-removing unit for removing the second DC offset value from the received signal after the amplifier; and an updating unit for updating the DC offset amount stored in the memory in view of the second DC offset value generated by the DC offset amount generator. A maximum value of the second DC offset value is set larger than a multiplication value of a gain of the amplifier by a minimum resolution value of the first DC offset value.

Abstract: A receiver includes a memory for storing DC offset amounts in accordance with a DC offset component remaining in a received signal; a first DC offset component-removing unit configured so as to generate a first DC offset amount from the DC offset amounts stored in the memory and to remove the first DC offset amount from the received signal; an amplifier for amplifying a signal output from the first DC offset component-removing unit; and a second DC offset component-removing unit configured so as to generate a second DC offset amount from the DC offset amounts stored in the memory in view of a gain of the amplifier and remove the second DC offset amount from the signal amplified by the amplifier.

Abstract: A bias circuit including: a first current source which generates a first current; a second current source which generates a second current having a temperature-to-output current characteristic that an output current characteristic increases or decreases with a change in temperature to intersect with that of the first current; a first current-voltage conversion circuit which converts the first current to a first voltage; a second current-voltage conversion circuit which has an input terminal and converts a current inputted into the input terminal to a second voltage; a comparison circuit which compares the first voltage and the second voltage and generates a third current according to a result of the comparison; an addition unit which adds the third current to the second current and inputs a resulting current to the input terminal; and a voltage-current conversion circuit which converts the second voltage to a fourth current for bias.