Abstract: A substrate-processing method includes a) providing a substrate including a silicon oxide film on a surface of the substrate, b) supplying a gas mixture to the surface of the substrate, thereby etching the silicon oxide film, the gas mixture including fluorine-containing gas and basic gas, c) purging the surface of the substrate, and d) alternatingly repeating b) and c).

Abstract: An exhaust device includes: a first pressure regulator provided in an exhaust pipe connected to a processing container; a second pressure regulator provided on a downstream side of the first pressure regulator; a first vacuum gauge provided on an upstream side of the first pressure regulator; and a second vacuum gauge provided between the first pressure regulator and the second pressure regulator.

Abstract: A film forming method for forming a silicon film having a step coverage on a substrate having a recess in a surface of the substrate, the film forming method comprising: forming a silicon film such that a film thickness on an upper portion of a side wall of the recess is thicker than a film thickness on a lower portion of the side wall of the recess by supplying a silicon-containing gas to the substrate; and etching a portion of the silicon film conformally by supplying an etching gas to the substrate, wherein the act of forming the silicon film and the act of etching the portion of the silicon film are performed a number of times which is determined depending on the step coverage.

Abstract: There is provided a film forming method comprising an organic substance removal step of removing an organic substance adhering to an oxide film generated on a surface of a base by supplying a hydrogen-containing gas and an oxygen-containing gas to the base; an oxide film removal step of removing the oxide film formed on the surface of the base after the organic substance removal step; and a film forming step of forming a predetermined film on the surface of the base after the oxide film removal step.

Abstract: According to one embodiment of the present disclosure, a method for forming a crystallized semiconductor film having a specific grain size on a substrate includes: forming a seed layer on the substrate accommodated in a processing container; vacuuming an interior of the processing container to a medium vacuum or less in a state in which the substrate, on which the seed layer is formed, is accommodated in the processing container; forming an amorphous semiconductor film on the seed layer after vacuuming the interior of the processing container; and crystallizing the amorphous semiconductor film by heat processing.

Abstract: A method of selectively forming a silicon film on an upper portion of each of protruded portions formed on a substrate, which includes: supplying a first silicon-containing gas to the substrate and forming a first silicon film so that a film thickness of the first silicon film becomes thicker in the upper portion rather than in a lower portion of a sidewall of each protruded portion; subsequently, supplying an etching gas to the substrate and removing the first silicon film on the sidewall of each protruded portion while leaving the first silicon film on an upper surface of each protruded portion; and subsequently, supplying a second silicon-containing gas to the substrate and forming a second silicon film so that a film thickness of the second silicon film becomes thicker in the upper portion rather than in the lower portion of a sidewall of each protruded portion.

Abstract: A substrate processing apparatus includes a processing container configured to accommodate a plurality of substrates therein, a gas supply configured to supply a first raw material gas of a compound containing Si or Ge and H and a second raw material gas of a compound containing Si or Ge and a halogen element into the processing container; and an exhauster configured to evacuate an inside of the processing container, wherein the gas supply has a dispersion nozzle provided with a plurality of gas holes for discharging the first raw material gas and the second raw material gas, and the substrate processing apparatus further comprises a heater configured to heat the first raw material gas and the second raw material gas in the dispersion nozzle.

Abstract: There is provided a film forming method including: supplying a halogen-free silicon raw material gas into a processing container that accommodates a substrate therein in a halogen-free silicon raw material gas supply process; supplying a halogen-containing silicon raw material gas into the processing container in a halogen-containing silicon raw material gas supply process; removing the halogen-containing silicon raw material gas inside the processing container in a halogen-containing silicon raw material gas removal process; and repeating a cycle including a sequence of the halogen-free silicon raw material gas supply process, the halogen-containing silicon raw material gas supply process, and the halogen-containing silicon raw material gas removal process in a continuous manner.

Abstract: An exhaust device includes: a first pressure regulator provided in an exhaust pipe connected to a processing container; a second pressure regulator provided on a downstream side of the first pressure regulator; a first vacuum gauge provided on an upstream side of the first pressure regulator; and a second vacuum gauge provided between the first pressure regulator and the second pressure regulator.

Abstract: According to one embodiment of the present disclosure, a method for forming a crystallized semiconductor film having a specific grain size on a substrate includes: forming a seed layer on the substrate accommodated in a processing container; vacuuming an interior of the processing container to a medium vacuum or less in a state in which the substrate, on which the seed layer is formed, is accommodated in the processing container; forming an amorphous semiconductor film on the seed layer after vacuuming the interior of the processing container; and crystallizing the amorphous semiconductor film by heat processing.

Abstract: A film forming method for forming a silicon film having a step coverage on a substrate having a recess in a surface of the substrate, the film forming method comprising: forming a silicon film such that a film thickness on an upper portion of a side wall of the recess is thicker than a film thickness on a lower portion of the side wall of the recess by supplying a silicon-containing gas to the substrate; and etching a portion of the silicon film conformally by supplying an etching gas to the substrate, wherein the act of forming the silicon film and the act of etching the portion of the silicon film are performed a number of times which is determined depending on the step coverage.

Abstract: A method of selectively forming a silicon film on an upper portion of each of protruded portions formed on a substrate, which includes: supplying a first silicon-containing gas to the substrate and forming a first silicon film so that a film thickness of the first silicon film becomes thicker in the upper portion rather than in a lower portion of a sidewall of each protruded portion; subsequently, supplying an etching gas to the substrate and removing the first silicon film on the sidewall of each protruded portion while leaving the first silicon film on an upper surface of each protruded portion; and subsequently, supplying a second silicon-containing gas to the substrate and forming a second silicon film so that a film thickness of the second silicon film becomes thicker in the upper portion rather than in the lower portion of a sidewall of each protruded portion.

Abstract: There is provided a film forming method comprising an organic substance removal step of removing an organic substance adhering to an oxide film generated on a surface of a base by supplying a hydrogen-containing gas and an oxygen-containing gas to the base; an oxide film removal step of removing the oxide film formed on the surface of the base after the organic substance removal step; and a film forming step of forming a predetermined film on the surface of the base after the oxide film removal step.