Abstract: A power semiconductor device includes a power semiconductor chip being a chip of a power semiconductor element, a temperature sensing diode chip being a chip of a temperature sensing diode element mounted in a first region on a surface electrode being one of main electrodes of the power semiconductor chip, and a lead frame connected to a second region on the surface electrode. An insulating film is provided on a side surface of the lead frame facing the temperature sensing diode chip.

Abstract: Provided is a semiconductor device having excellent heat dissipation at low cost. The semiconductor device includes a heat spreader, a semiconductor element, a metal block, a terminal having a plate shape, and a sealing material. The semiconductor element includes a front surface electrode and is mounted on an upper surface of the heat spreader. The metal block includes a bonding surface bonded to the front surface electrode and a heat dissipating surface connected to the upper surface with interposition of the insulating member. The metal block is provided so as to straddle above one side of the semiconductor element. The first end of the terminal is bonded to the metal block. The second end of the terminal is exposed from the sealing material and formed to be connectable to an external circuit. The sealing material seals the heat spreader, the semiconductor element, the metal block, and the first end.