Abstract: A display driving device includes a light emitting circuit, a control circuit, and a boost circuit. The light emitting circuit is coupled to a first node. The light emitting circuit is configured to emit according to a first emission signal, a second emission signal, and a voltage level at the first node. The control circuit is coupled to a second node. The control circuit is configured to charge the second node according to a sweep signal and the first emission signal. The boost circuit is configured to boost and charge a voltage level at the second node to the first node. The voltage level at the first node is greater than the voltage level at the second node.

Abstract: Exemplary semiconductor processing methods may include providing a first silicon-containing precursor and a second silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The first silicon-containing precursors may include Si—O bonding. The methods may include forming a plasma of the first silicon-containing precursor and the second silicon-containing precursor in the processing region. The methods may include forming a layer of silicon-containing material on the substrate. The layer of silicon-containing material may be characterized by a dielectric constant less than or about 3.0.

Abstract: Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor in the processing region. The plasma may be at least partially formed by a pulsing RF power operating at less than or about 2,000 W. The methods may include forming a layer of silicon-containing material on the substrate. The layer of silicon-containing material may be characterized by a dielectric constant less than or about 3.0.

Abstract: Exemplary processing methods may include providing a treatment precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may include a layer of a silicon-containing material. The methods may include forming inductively-coupled plasma effluents of the treatment precursor. The methods may include contacting the layer of the silicon-containing material with the inductively-coupled plasma effluents of the treatment precursor to produce a treated layer of the silicon-containing material. The contacting may reduce a dielectric constant of the layer of the silicon-containing material.

Abstract: The present disclosure provides a head-up display device for rail transportation, including: a base plate assembly; a light source assembly, configured to emit an incident light; a first reflector assembly, disposed on a same side of the base plate assembly as the light source assembly and on a light path of the incident light, to receive the incident light and emit a reflected light; a second reflector assembly, disposed on a side of the base plate assembly away from the first reflector assembly and on a light path of the reflected light, to receive the reflected light and emit a first diffused light; and a third reflector assembly, disposed on a same side of the base plate assembly as the second reflector assembly and disposed on a light path of the first diffused light, to receive the first diffused light and form a projected image.

Abstract: Semiconductor processing methods are described for forming low-? dielectric materials. The methods may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-carbon-and-hydrogen-containing precursor. A substrate may be disposed within the processing region. The methods may include forming plasma effluents of the deposition precursors. The methods may include depositing a layer of silicon-containing material on the substrate. The layer of silicon-containing material may be characterized by a dielectric constant of less than or about 4.0.

Abstract: The present application provides a card binding method, a user terminal, a server, a card binding system and a storage medium. The method includes accepting an access from a user terminal to a first page address indicated by the user terminal calling a first application to scan an information carrier pattern, and acquiring a card number of a target card; acquiring user information about a target user from a back-end server of the first application; sending, to the user terminal, a second page address corresponding to a redirected card binding page; receiving a card binding confirmation message indicating identity information about the target user; and interacting with a card issuing server and a back-end server of a card binding application by using the identity information, to complete a binding between a card identifier of the target card and a user identifier of the target user in the card binding application.

Abstract: Disclosed in the present application is a large-angle laser scanning projection device, including: a light source generator, which is used to emit a laser beam outwards; a first lens, which is arranged on an outlet optical path of the light source generator and used to change a divergence angle of the laser beam; a scanning galvanometer, which is arranged on an outlet optical path of the first lens and is capable of realizing a rotating motion and used to reflect the laser beam incident on a surface of the scanning galvanometer to a second lens at a different angle when carrying out the rotating motion.

Abstract: A method for computer vision processing. The method includes projecting input visual data into a plurality of intermediate feature maps by performing a plurality of 1×1 convolution operations; generating an attention weighted map by performing attention and aggregation operations on the plurality of intermediate feature maps; generating a convolved feature map by performing shift and summation operations on the plurality of intermediate feature maps; and adding the attention weighted map and the convolved feature map based on at least one scalar.

Abstract: A mask fabrication method, mask, Josephson junction element, and quantum chip is provided, which belong to the field of quantum information, especially the field of quantum computing. The mask fabrication method includes: providing a dielectric layer, wherein a ratio of a thickness of the dielectric layer to a line width of a target pattern to be fabricated is greater than a cutting depth-to-width ratio allowed by a patterning apparatus; determining a first sublayer and a second sublayer of the dielectric layer, wherein a ratio of a thickness of the second sublayer to the line width of the target pattern is less than or equal to the cutting depth-to-width ratio; forming the target pattern on the second sublayer and a first pattern on the first sublayer, wherein the first pattern exposes the target pattern.

Abstract: The present invention relates to a clock skew tracking method based on weighted observation fusion and timestamp-free interaction, and belongs to the technical field of wireless sensor networks. The method comprises performing listening synchronization by an implicit node S within an overlapping communication range between a reference node and multiple active nodes, and after multiple pairs of timestamp-free communication messages are successfully overheard, using multiple extended Kalman filtering algorithms to perform weighted fusion of multiple observed values on multiple obtained tracking results based on a scalar weighted linear minimum variance information fusion criterion, thus realizing timestamp-free relative skew fusion tracking of the implicit node.

Abstract: The present invention relates to a timestamp-free synchronization clock parameter tracking method based on extended Kalman filter, and belongs to the technical field of wireless sensor networks. With a first order Gauss Markov model and a clock model as a state equation, evolution processes of clock skew and instantaneous clock offset is described. Then an observation equation constituted by observation models of timestamp-free synchronization and instantaneous clock offset is established, and clock skew and instantaneous clock offset are jointly tracked by a tracking method based on extended Kalman filter to realize synchronization between a node to be synchronized and a reference clock node. The method can track two time-varying parameters simultaneously by following a network data flow without needing a dedicated synchronization frame to exchange synchronization information, which reduces energy consumption and improves synchronization precision.

Abstract: An organic light-emitting diode (OLED) display panel, a manufacturing method thereof, and an OLED display device are provided. The OLED display panel disposes an organic functional layer under an encapsulation layer and makes the organic functional layer undergo visible changes when in contact with water and oxygen. Therefore, encapsulation effect can be tested by merely knowing the changes of the organic functional layer, and a test time is shorter. Meanwhile, a minimum distance between boundaries of the organic functional layer and the encapsulation layer is greater than a coating precision accuracy of the encapsulation layer, thereby ensuring the encapsulation effect.

Abstract: Disclosed in the present invention is an efficient heat-dissipating head-up display (HUD), including an outer housing, on which a light outlet through-hole is provided; a light source housing, wherein the light source housing and the outer housing are detachably connected, and an optical machine mechanism is also installed in the light source housing, and the optical machine mechanism is used to output image light to the outer housing; and a heat conducting member is also connected between the optical machine mechanism and the light source housing, and the heat conducting member is used to conduct heat generated by the optical machine mechanism to the light source housing. In the present invention, the heat generated by the optical machine mechanism in the operating process can be directly conducted to the light source housing through the heat conducting member, thus improving the heat conduction efficiency.

Abstract: Disclosed in the present invention is a heat-dissipating head-up display (HUD), including an outer housing, on which a light outlet through-hole is provided; a light source housing, wherein the light source housing and the outer housing are detachably connected, and an optical machine mechanism is also installed in the light source housing, and the optical machine mechanism is used to output image light to the outer housing; the light source housing is also provided with a heat-dissipating through-hole, the optical machine mechanism is also installed with a first heat-dissipating member, and the first heat-dissipating member passes through the light source housing via the heat-dissipating through-hole and extends outwards.

Abstract: The present disclosure relates to an electronic device, a wireless communication method and a computer-readable storage medium. The electronic device for a vehicle according to the present disclosure comprises a processing circuit configured to: determine load information of the vehicle; generate vehicle information, with the vehicle information comprising the load information of the vehicle; and send the vehicle information to a server for the server to determine, according to the vehicle information, road planning information for the vehicle. By using the electronic device, the wireless communication method and the computer-readable storage medium according to the present disclosure, the load information of the vehicle can be taken into consideration during road planning and decision planning, thereby better managing the load of the vehicle and more rationally planning a road.

Abstract: Embodiments include semiconductor processing methods to form low-K films on semiconductor substrates are described. The processing methods may include flowing one or more deposition precursors to a semiconductor processing system, wherein the one or more deposition precursors include a silicon-containing precursor. The silicon-containing precursor may include a carbon chain. The methods may include generating a deposition plasma from the one or more deposition precursors. The methods may include depositing a silicon-and-carbon-containing material on the substrate from plasma effluents of the deposition plasma. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant less than or about 3.0.

Abstract: Embodiments include semiconductor processing methods to form low-? films on semiconductor substrates are described. The processing methods may include flowing one or more deposition precursors to a semiconductor processing system. The one or more deposition precursors may include a silicon-containing precursor that may be a cyclic compound. The methods may include generating a deposition plasma from the one or more deposition precursors. The methods may include depositing a silicon-and-carbon-containing material on the substrate from plasma effluents of the deposition plasma. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant less than or about 3.0.

Abstract: Exemplary semiconductor processing methods may include providing one or more deposition precursors to a processing region of a semiconductor processing chamber. A semiconductor substrate may be positioned within the processing region. The methods may include forming a layer of low dielectric constant material on the semiconductor substrate. The methods may include purging the processing region of the one or more deposition precursors. A plasma power may be maintained at less than or about 750 W while purging the processing region. The methods may include forming an interface layer on the layer of low dielectric constant material. The methods may include forming a cap layer on the interface layer.

Abstract: An optical transmission system is provided. The optical transmission system includes a first board card including a multiplexer/demultiplexer, and an optical amplifier. The multiplexer/demultiplexer is configured to receive a plurality of first split optical signals and combine the received plurality of first split optical signals into a first combined optical signal, and the optical amplifier is configured to amplify power of the first combined optical signal.