Abstract: A communication method and apparatus to resolve a problem that in non-terrestrial network communication, because a terminal performs measurement on all candidate cells configured by a network device, measurement redundancy exists, resulting in energy waste of the terminal. The method includes: a network device determines at least one candidate cell, and sends first indication information to the terminal, where the first indication information indicates a condition for the terminal to perform measurement on at least one candidate cell.

Abstract: A cell reselection method and an apparatus. The method includes measuring a target cell to obtain a first measurement result in a first time period; determining a second measurement result of the target cell in a second time period based on an AI model, where input information of the AI model includes the first measurement result, and an end moment of the second time period is later than an end moment of the first time period; and performing reselection from a serving cell to the target cell if signal quality of the target cell in the second time period satisfies a preset condition, where the signal quality is determined based on the second measurement result. In this way, a terminal device can determine to perform reselection to the target cell, improving cell reselection efficiency and reducing power consumption of the terminal device.

Abstract: This application relates to the field of communication technologies, and discloses a communication method, apparatus, and system. The method includes: A terminal determines predicted values of first-type measurement quantities of a plurality of cells at at least one time point in a first time period, where the plurality of cells include a serving cell and a candidate cell; and if the predicted values of the first-type measurement quantities of the plurality of cells at the at least one time point satisfy a reporting condition, sends measurement report information to a network device.

Abstract: Embodiments of this application provide a handover method and an apparatus and system for executing the method. The method may include receiving a handover request message from a second access network device. The handover request message includes time information of a terminal device to be handed over to a first access network device. The method may further include sending a path switch request message to a core network device. The path switch request message is sent between receiving the handover request message and receiving a handover complete message.

Abstract: This application provides a communication method and apparatus. The aforesaid includes a first access network device sending, to one or more terminal devices, first information used to determine a terminal device set to which each of the one or more terminal devices belongs, the one or more terminal devices sending, to the first access network device, second information indicating a terminal device set to which the terminal device belongs, the first access network device sending a handover request message to a second access network device based on the second information, where the handover request message includes identification information and/or a quantity of terminal devices in a first terminal device set, and the first access network device receiving a handover request acknowledgment message from the second access network device, and broadcasting handover indication information, where the handover indication information indicates the terminal device in the first terminal device set to perform handover.

Abstract: An optical transmission system is provided. The optical transmission system includes a first board card including a multiplexer/demultiplexer, and an optical amplifier. The multiplexer/demultiplexer is configured to receive a plurality of first split optical signals and combine the received plurality of first split optical signals into a first combined optical signal, and the optical amplifier is configured to amplify power of the first combined optical signal.

Abstract: The present disclosure generally provides methods. The methods include exposing a substrate in a processing chamber to a deposition precursor to form a first film. The first film having a first dielectric constant, a first leakage current, a first breakdown voltage, and a first hardness. The first film is exposed to a reactive precursor to form a second film. The second film having a second dielectric constant, a second leakage current, a second breakdown voltage, and a second hardness, wherein the reactive precursor comprises an oxygenated precursor. The second film is exposed to a UV light source to form a third film. The third film having a third dielectric constant, a third leakage current, a third breakdown voltage, and a third hardness.

Abstract: The present invention relates to a timestamp-free synchronization clock parameter tracking method based on extended Kalman filter, and belongs to the technical field of wireless sensor networks. With a first order Gauss Markov model and a clock model as a state equation, evolution processes of clock skew and instantaneous clock offset is described. Then an observation equation constituted by observation models of timestamp-free synchronization and instantaneous clock offset is established, and clock skew and instantaneous clock offset are jointly tracked by a tracking method based on extended Kalman filter to realize synchronization between a node to be synchronized and a reference clock node. The method can track two time-varying parameters simultaneously by following a network data flow without needing a dedicated synchronization frame to exchange synchronization information, which reduces energy consumption and improves synchronization precision.

Abstract: A method for modulating the coefficient of thermal expansion (CTE) of dielectric films on a substrate is provided. In some embodiments, the method includes positioning a substrate within a processing chamber, forming a dielectric film stack on the substrate, and curing the dielectric film with a UV source to modify a CTE of the dielectric film.

Abstract: Embodiments of the present specification provide an active optical cable, an optical communication network and an optical communication method, where according to different connection requirements of a server node and a switch node, the active optical cable is set with optical transceiving apparatuses based on different signal processing technologies at two ends of an optical communication medium, i.e., a first optical transceiving apparatus and a second optical transceiving apparatus. Considering that a network card of the server node is small and signal integrity is easy to ensure, therefore, a signal processing technology used by the first optical transceiving apparatus connected to the server node does not include a digital signal processing technology with high power consumption and cost (i.e.

Abstract: Embodiments include semiconductor processing methods to form low-? films on semiconductor substrates are described. The processing methods may include flowing one or more deposition precursors to a semiconductor processing system. The one or more deposition precursors may include a silicon-containing precursor that may be a cyclic compound. The methods may include generating a deposition plasma from the one or more deposition precursors. The methods may include depositing a silicon-and-carbon-containing material on the substrate from plasma effluents of the deposition plasma. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant less than or about 3.0.

Abstract: This application provides a communication method. The method includes: A terminal device obtains GNSS location information in a preset time period, where a moment at which the terminal device starts to obtain the GNSS location information is a first moment, and a moment at which the terminal device completes obtaining the GNSS location information is a second moment. The terminal device allows triggering a CHO after the second moment; or the terminal device is prohibited from triggering the CHO in the preset time period; or the terminal device allows triggering the CHO in the preset time period.

Abstract: In some embodiments, a method of forming a dielectric film includes exposing a substrate in a processing chamber to a silicon precursor having general Formula (I) to form a silicon-containing film on the substrate. Formula (I) can be represented by: wherein Q1 is a carbon atom or an oxygen atom, and each of R1, R2, R3, R4, R5, R6, R7, and R8 is independently selected from a hydrogen atom, a substituted alkyl, an unsubstituted alkyl, a substituted alkoxy, an unsubstituted alkoxy, a substituted vinyl, an unsubstituted vinyl, a silane, a substituted amine, an unsubstituted amine, or a halide. The method further includes purging the processing chamber of the silicon precursor.

Abstract: Exemplary semiconductor processing methods may include providing a silicon-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor and the nitrogen-containing precursor in the processing region. The plasma may be at least partially formed by an RF power operating at less than or about 1,000 W, at a pulsing frequency less than or about 1,000 Hz, and at a duty cycle between about 10% and 90%. The methods may include forming a layer of material on the substrate. The layer of material may be or include a silicon-and-nitrogen-containing material.

Abstract: This application discloses a communication method and apparatus, and a storage medium. In this application, after receiving a first offset at a first moment, a terminal adjusts the first offset at the first moment based on the first offset at the first moment and a first propagation delay difference that corresponds to the first moment and that is between a feeder link of a serving cell and that of a neighboring cell, to obtain a second offset at a second moment. Therefore, an accurate offset may be obtained and accuracy of neighboring cell measurement is improved.

Abstract: Disclosed herewith are a precursor, a gas mixture, and a method for depositing a dielectric film in a processing chamber. A method includes disposing a substrate on a susceptor disposed within a processing chamber; controlling a pressure level and a temperature of the processing chamber; delivering an RF power into the processing chamber; providing a precursor-containing gas mixture into the processing chamber, and applying a post-deposition process to the substrate after the dielectric film is formed on the substrate. The precursor-containing gas mixture includes a precursor and an inert gas selected from the group consisting of argon, nitrogen, and helium. The precursor includes a carbosilane having a Si—C—Si structure in a backbone of the precursor.

Abstract: This application provides a communication method and a communication apparatus. Including: a first network device obtains location information of a first terminal device and receives at least one measurement result from at least one terminal device, where the at least one measurement result includes location information of a corresponding terminal device and an indication indicating whether a signal of a first network is measured; and the first network device determines, based on the location information of the first terminal device and the at least one measurement result, that the first terminal device is located in a coverage area of the first network, and then configures the first terminal device to perform measurement on the signal of the first network. Thus, the first terminal device doesn't perform measurement on an area that is not covered by a cell in the first network, to avoid unnecessary measurement power consumption.

Abstract: Embodiments disclosed herein comprise a method for patterning a stack. In an embodiment, the method comprises providing a substrate with a hardmask layer over the substrate, and depositing an underlayer over the hardmask layer with a dry deposition process, where the underlayer comprises silicon, carbon, oxygen, and hydrogen. In an embodiment, the method further comprises forming a resist layer over the underlayer, exposing and developing the resist layer to form a pattern in the resist layer, and transferring the pattern into the underlayer and the hardmask layer with an etch process.

Abstract: Disclosed is a light source for a picture generation unit in a head up display (HUD), including: at least two light emitting assemblies, each configured to emit at least three colors of light; and a light combining assembly, including a dichroic beam splitter and combiner mirror, a half-wave plate, and a polarizing beam splitter mirror, where the dichroic beam splitter and combiner mirror is arranged on light emitting paths of the light emitting assemblies and configured to combine the at least three colors of light emitted by each of the light emitting assemblies into combined light, the half-wave plate is arranged on a light emitting path of one ray of the combined light and configured to change a polarization characteristic of the combined light.

Abstract: Exemplary semiconductor processing methods may include providing a first silicon-containing precursor and a second silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The first silicon-containing precursors may include Si—O bonding. The methods may include forming a plasma of the first silicon-containing precursor and the second silicon-containing precursor in the processing region. The methods may include forming a layer of silicon-containing material on the substrate. The layer of silicon-containing material may be characterized by a dielectric constant less than or about 3.0.