Patents by Inventor Rui-Qi Png

Rui-Qi Png has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220059769
    Abstract: A composition comprising: an organic semiconductor comprising one or more aromatic or heteroaromatic moieties; one or more cations covalently bonded to the organic semiconductor, or to a second material; and at least one anion donor selected from the class of divalent and higher valent anions; wherein the organic semiconductor has an electron affinity between 1.5 and 4.5 eV.
    Type: Application
    Filed: December 21, 2018
    Publication date: February 24, 2022
    Applicant: National University of Singapore
    Inventors: Peter Kian-Hoon Ho, Lay-Lay Chua, Rui-Qi Png, Cindy Guan-Yu Tang
  • Patent number: 10763438
    Abstract: There is provided a material comprising a n-doped electrically conductive polymer comprising at least one electron-deficient aromatic moiety, each electron-deficient aromatic moiety having a gas-phase electron affinity (EA) of 1-3 eV; and at least one counter-cation covalently bonded to the polymer or to a further polymer comprised in the material, the polymer being n-doped to a charge density of 0.1-1 electron per electron-deficient aromatic moiety, the polymer being capable of forming a layer having a vacuum workfunction (WF) of 2.5-4.5 eV, and wherein all the counter-cations comprised in the material are immobilised such that any electron in the polymer cannot significantly diffuse or migrate out of the polymer. There is also provided a method of preparing the material.
    Type: Grant
    Filed: July 1, 2016
    Date of Patent: September 1, 2020
    Assignee: National University of Singapore
    Inventors: Lay-Lay Chua, Peter Kian-Hoon Ho, Rui-Qi Png, Mervin Chun-Yi Ang, Kim-Kian Choo, Cindy Guan-Yu Tang
  • Patent number: 10723112
    Abstract: The present invention discloses a method for transferring a thin film from a first substrate to a second substrate comprising the steps of: providing a transfer structure and a thin film provided on a surface of a first substrate, the transfer structure comprising a support layer and a film contact layer, wherein the transfer structure contacts the thin film; removing the first substrate to obtain the transfer structure with the thin film in contact with the film contact layer; contacting the transfer structure obtained with a surface of a second substrate; and removing the film contact layer, thereby transferring the thin film onto the surface of the second substrate.
    Type: Grant
    Filed: May 23, 2012
    Date of Patent: July 28, 2020
    Assignee: National University of Singapore
    Inventors: Lay-Lay Chua, Peter Ho, Rui-Qi Png, Fong Yu Kam, Jie Song, Loke-Yuen Wong, Jing-Mei Zhuo, Kian Ping Loh, Geok Kieng Lim
  • Patent number: 10134990
    Abstract: This invention relates to a supported polymer heterostructure and methods of manufacture. The heterostructure is suitable for use in a range of applications which require semiconductor devices, including photovoltaic devices and light-emitting diodes.
    Type: Grant
    Filed: April 21, 2017
    Date of Patent: November 20, 2018
    Assignee: NATIONAL UNIVERSITY OF SINGAPORE
    Inventors: Peter Ho, Perq-Jon Chia, Lay-Lay Chua, Rui-Qi Png, Richard Henry Friend
  • Publication number: 20180277764
    Abstract: There is provided a material comprising a n-doped electrically conductive polymer comprising at least one electron-deficient aromatic moiety, each electron-deficient aromatic moiety having a gas-phase electron affinity (EA) of 1-3 eV; and at least one counter-cation covalently bonded to the polymer or to a further polymer comprised in the material, the polymer being n-doped to a charge density of 0.1-1 electron per electron-deficient aromatic moiety, the polymer being capable of forming a layer having a vacuum workfunction (WF) of 2.5-4.5 eV, and wherein all the counter-cations comprised in the material are immobilised such that any electron in the polymer cannot significantly diffuse or migrate out of the polymer. There is also provided a method of preparing the material.
    Type: Application
    Filed: July 1, 2016
    Publication date: September 27, 2018
    Inventors: Lay-Lay Chua, Peter Kian-Hoon Ho, Rui-Qi Png, Mervin Chun-Yi Ang, Kim-Kian Choo, Cindy Guan-Yu Tang
  • Patent number: 9780306
    Abstract: This invention relates to a supported polymer heterostructure and methods of manufacture. The heterostructure is suitable for use in a range of applications which require semiconductor devices, including photovoltaic devices and light-emitting diodes.
    Type: Grant
    Filed: December 2, 2014
    Date of Patent: October 3, 2017
    Assignee: NATIONAL UNIVERSITY OF SINGAPORE
    Inventors: Peter Ho, Perq-Jon Chia, Lay-Lay Chua, Rui-Qi Png, Richard Henry Friend
  • Patent number: 9745252
    Abstract: A cross-linking moiety having a general formula I: ArF-W, wherein ArF comprises a fluorinated phenyl azide group having at least one non-fluorine substituent that is bulkier than fluorine at a meta position relative to the azide group, and W comprises an electron-withdrawing group.
    Type: Grant
    Filed: December 6, 2010
    Date of Patent: August 29, 2017
    Assignee: NATIONAL UNIVERSITY OF SINGAPORE
    Inventors: Peter Ho, Lay-Lay Chua, Richard Henry Friend, Jie-Cong Tang, Rui-Qi Png, Bibin Thomas Anto, Perq-Jon Chia, Zhi Kuang Tan, Kim Kian Choo
  • Publication number: 20170222146
    Abstract: This invention relates to a supported polymer heterostructure and methods of manufacture. The heterostructure is suitable for use in a range of applications which require semiconductor devices, including photovoltaic devices and light-emitting diodes.
    Type: Application
    Filed: April 21, 2017
    Publication date: August 3, 2017
    Inventors: Peter HO, Perq-Jon CHIA, Lay-Lay CHUA, Rui-Qi PNG, Richard Henry FRIEND
  • Publication number: 20150287923
    Abstract: This invention relates to a supported polymer heterostructure and methods of manufacture. The heterostructure is suitable for use in a range of applications which require semiconductor devices, including photovoltaic devices and light-emitting diodes.
    Type: Application
    Filed: December 2, 2014
    Publication date: October 8, 2015
    Inventors: Peter HO, Perq-Jon CHIA, Lay-Lay CHUA, Rui-Qi PNG, Richard Henry FRIEND
  • Patent number: 8927383
    Abstract: This invention relates to a supported polymer heterostructure and methods of manufacture. The heterostructure is suitable for use in a range of applications which require semiconductor devices, including photovoltaic devices and light-emitting diodes.
    Type: Grant
    Filed: November 28, 2008
    Date of Patent: January 6, 2015
    Assignee: National University of Singapore
    Inventors: Peter Ho, Perq-Jon Chia, Lay-Lay Chua, Rui-Qi Png, Richard Henry Friend
  • Publication number: 20140087191
    Abstract: The present invention discloses a method for transferring a thin film from a first substrate to a second substrate comprising the steps of: providing a transfer structure and a thin film provided on a surface of a first substrate, the transfer structure comprising a support layer and a film contact layer, wherein the transfer structure contacts the thin film; removing the first substrate to obtain the transfer structure with the thin film in contact with the film contact layer; contacting the transfer structure obtained with a surface of a second substrate; and removing the film contact layer, thereby transferring the thin film onto the surface of the second substrate.
    Type: Application
    Filed: May 23, 2012
    Publication date: March 27, 2014
    Applicant: NATIONAL UNIVERSITY OF SINGAPORE
    Inventors: Lay-Lay Chua, Peter Ho, Rui-Qi Png, Fong Yu Kam, Jie Song, Loke-Yuen Wong, Jing-Mei Zhuo, Kian Ping Loh, Geok Kieng Lim
  • Publication number: 20120244294
    Abstract: A cross-linking moiety having a general formula I: N3—ArF—W, wherein ArF comprises a fluorinated phenyl azide group having at least one non-fluorine substituent that is bulkier than fluorine at a meta position relative to the azide group, and W comprises an electron-withdrawing group.
    Type: Application
    Filed: December 6, 2010
    Publication date: September 27, 2012
    Inventors: Peter Ho, Lay-Lay Chua, Richard Henry Friend, Jie-Cong Tang, Rui-Qi Png, Bibin Thomas Anto, Perq-Jon Chia, Zhi Kuang Tan, Kim Kian Choo
  • Publication number: 20110089406
    Abstract: This invention relates to a supported polymer heterostructure and methods of manufacture. The heterostructure is suitable for use in a range of applications which require semiconductor devices, including photovoltaic devices and light-emitting diodes.
    Type: Application
    Filed: November 28, 2008
    Publication date: April 21, 2011
    Inventors: Peter Ho, Perq-Jon Chia, Lay-Lay Chua, Rui-Qi Png, Richard Henry Friend