Abstract: A method for fabricating a film on a substrate and a method for controlling the heating rate of a plurality of nanoparticles to transform the plurality of nanoparticles into a plurality of nanorods and nano-cone structures includes the steps of providing a sol precursor, providing a substrate, depositing the sol precursor onto the substrate via a sol-gel technique, annealing the sol precursor under ambient pressure at a controlled heating rate, and cooling down the sol precursor to form a film.

Abstract: The present application relates to the field of refrigeration, and provides door assembly and refrigeration equipment. The door assembly includes: a door leaf, including a first door body and a second door body, where the first door body is configured to be rotatably connected to an installation part, and the second door body is configured to move toward an opening side or a hinged side of the first door body with respect to the first door body to switch between a sealing position and an avoidance position; the door leaf is configured to switch between a closing state in which the second door body is in the sealing position and an opening state; the second door body is in the avoidance position when the door leaf is switched between the closing state and the opening state. When the door leaf is in a closing state, the second door body is in the sealing position to ensure the sealing effect of the door leaf.

Abstract: A method of producing a film of carbon nitride material, including the steps of providing a precursor of the carbon nitride material in a reacting vessel and a substrate substantially above the precursor of the carbon nitride material; heating the reacting vessel, the precursor of the carbon nitride material and the substrate at the first predetermined temperature; and quenching the reacting vessel to reach the second predetermined temperature; wherein the film of carbon nitride material is formed on a surface of the substrate during the quenching of the reacting vessel.

Abstract: A method of producing a film of carbon nitride material, including the steps of providing a precursor of the carbon nitride material in a reacting vessel and a substrate substantially above the precursor of the carbon nitride material; heating the reacting vessel, the precursor of the carbon nitride material and the substrate at the first predetermined temperature; and quenching the reacting vessel to reach the second predetermined temperature; wherein the film of carbon nitride material is formed on a surface of the substrate during the quenching of the reacting vessel.

Abstract: A method of forming a semiconductor film at pressure between 10?5 atm and 10 atm in the presence of a substrate includes (i) providing a precursor material in a reaction container; (ii) arranging the substrate on the reaction container such that a conductive surface of the substrate is facing towards the precursor material; and (iii) conducting a heat treatment to deposit a semiconductor layer on the conductive surface of the substrate. A semiconductor film is obtained from this method and a device comprising such semiconductor film is also provided.

Abstract: A method of forming a semiconductor film at pressure between 10?5 atm and 10 atm in the presence of a substrate includes (i) providing a precursor material in a reaction container; (ii) arranging the substrate on the reaction container such that a conductive surface of the substrate is facing towards the precursor material; and (iii) conducting a heat treatment to deposit a semiconductor layer on the conductive surface of the substrate. A semiconductor film is obtained from this method and a device comprising such semiconductor film is also provided.

Abstract: A hydrogenation method and distillate two-phase hydrogenation reactor in which the size of an upper space of the reactor is greater than that of a lower catalyst bed part. The reactor comprises 2 to 4 catalyst beds. An inner component for gas replenishment and for stripping a liquid-phase stream containing impurities is arranged between at least one adjacent catalyst bed and comprises a separator plate and exhaust pipes. The separator plate is provided with multiple downcomer through holes. The separator plate is connected with a plurality of exhaust pipes. The exhaust pipes are vertically arranged above the separator plate. The top parts of the exhaust pipes are in contact with the lower part of the upper catalyst bed.

Abstract: A hydrogenation method and distillate two-phase hydrogenation reactor in which the size of an upper space of the reactor is greater than that of a lower catalyst bed part. The reactor comprises 2 to 4 catalyst beds. An inner component for gas replenishment and for stripping a liquid-phase stream containing impurities is arranged between at least one adjacent catalyst bed and comprises a separator plate and exhaust pipes. The separator plate is provided with multiple downcomer through holes. The separator plate is connected with a plurality of exhaust pipes. The exhaust pipes are vertically arranged above the separator plate. The top parts of the exhaust pipes are in contact with the lower part of the upper catalyst bed.

Abstract: A method of storing hydrogen using carbon nanotubes having a diameter ranging from 0.6-0.8 nm. The hydrogen may be stored in a container which is made of another material. The carbon nanotubes may be provided inside the container for adsorbing the hydrogen.

Abstract: A method of storing hydrogen using carbon nanotubes having a diameter ranging from 0.6-0.8 nm. The hydrogen may be stored in a container which is made of another material. The carbon nanotubes may be provided inside the container for adsorbing the hydrogen.